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Renesas 71V3577S85BGI
- Part No.:
- 71V3577S85BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S85BGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,076
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Product details
Overview
71V3577S85BGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst modes via LBO input, single-cycle deselect, and self-timed write using GW/BWE/BWx controls - deployed in high-speed cache and packet buffering subsystems.
For engineers reviewing the 71V3577S85BGI datasheet, 71V3577S85BGI pinout, 71V3577S85BGI application, or 71V3577S85BGI equivalent, key selection criteria include TQFP-100 package compatibility, 3.3V core/I/O supply, burst counter timing behavior, flow-through read latency, and industrial-grade power-down (ZZ) support.
Technical Context
This SRAM implements a synchronous, register-based address/data path with no output registers - enabling true flow-through read timing where data appears on I/O pins after tCD (≤8.5 ns) from CLK rise. Burst addressing is managed by an internal binary counter synchronized to ADV, with sequence order determined statically by LBO level (LOW = linear, HIGH = interleaved).
Write operations are fully synchronous and support four granular modes: global write (GW), byte write enable (BWE), individual byte writes (BW1–BW4), and chip-select-controlled deselection. Power management includes three distinct low-power states: standby (ISB1 ≤35 mA), clock-running standby (ISB2 ≤95 mA), and full sleep mode (IZZ ≤35 mA) activated by ZZ high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin multiplexing |
| Access Time / Max Frequency | 8.5 ns / 87 MHz - guaranteed for industrial temp range (–40°C to +85°C) |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate rails enable noise isolation |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - static configuration, no runtime switching |
| Power-Down Current | IZZ ≤35 mA in full sleep mode (ZZ = HIGH) - retains data with minimal leakage |
| Output Architecture | Flow-through (no output register) - eliminates one clock cycle of read latency vs. pipelined SRAMs |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - RoHS-compliant, surface-mount compatible |
Pinout & Package
71V3577S85BGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, exposed pad optional. Pinout validated per Renesas document 6450 drw 02a (128K × 36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADSP/ADSC active; A0–A16 used for 128K × 36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous operations aligned to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode (CE LOW + CS0 HIGH + CS1 LOW) enables device; supports multi-chip select schemes |
| ADV | Burst Address Advance | Active-LOW signal increments internal burst counter; HIGH suspends burst progression |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides all byte enables; BWE gates BWx; BW1–BW4 each control 9-bit data byte (I/O0–7 + I/OP1, etc.) |
| OE | Asynchronous Output Enable | Drives I/O pins to high-Z when HIGH - independent of CLK, enabling bus sharing |
| LBO | Burst Order Selection | DC-level input (LOW = linear, HIGH = interleaved); must remain static during operation |
| ZZ | Asynchronous Sleep Mode | HIGH disables internal clock and reduces current to IZZ ≤35 mA; retains memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path, flow-through output path - no output register delay |
| VDD, VDDQ, VSS | Power/Ground | Dual 3.3V supplies: VDD (core logic), VDDQ (I/O drivers); multiple VSS pins reduce ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.5 ns directly from CLK edge, critical for zero-wait-state interfaces |
| Single-cycle deselect | Device enters high-Z state within one clock cycle of CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation - simplifies controller design |
| Linear/interleaved burst mode | LBO pin configures burst address sequence to match processor/cache line ordering - avoids software remapping |
| Industrial temperature support | Rated for –40°C to +85°C operation with full AC/DC specifications - suitable for base station, industrial PLC, and avionics |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: L2 cache buffer between RISC processor and DDR SDRAM in telecom line card. IC Role / Device Role / Timing Role: Stores recently accessed instruction/data blocks; provides sub-10 ns read access to keep CPU pipeline full. Use Value: Flow-through architecture delivers tCD = 8.5 ns, enabling zero-wait-state reads at 87 MHz - increases effective bandwidth by 22% vs. pipelined SRAMs. | Use Scenario: Temporary storage for Ethernet frame headers and payloads in 10Gbps switch ASIC interface. IC Role / Device Role / Timing Role: Acts as first-in-first-out (FIFO) buffer with burst-mode writes from MAC layer and burst reads to packet classifier. Use Value: Linear burst mode (LBO = LOW) matches sequential frame header layout; single-cycle deselect prevents corruption during rapid context switches. |
| Real-Time Industrial Controller | Radar Signal Processing Buffer |
Use Scenario: Data scratchpad in FPGA-based motion controller handling servo loop updates at 20 kHz. IC Role / Device Role / Timing Role: Holds interpolated position tables and PID coefficients; accessed synchronously via FPGA fabric clock domain. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncooled enclosures; ISB1 ≤35 mA extends uptime in battery-backed systems. | Use Scenario: Intermediate storage for ADC samples in phased-array radar front-end before FFT processing. IC Role / Device Role / Timing Role: Buffers 16-bit I/Q sample pairs at 125 MSPS; burst writes align with ADC capture windows. Use Value: 36-bit width supports dual 16-bit + parity data paths; 8.5 ns access ensures real-time transfer to DSP without FIFO overflow under worst-case jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1372KV18 | 256K × 18-bit only; 7.5 ns access (117 MHz); different pinout (119-ball BGA) | Requires PCB redesign; lacks 128K × 36 configuration and TQFP option | Select only if BGA footprint and higher speed justify layout change and thermal redesign. |
| AS7C3256B | Asynchronous SRAM; 15 ns access; no burst mode, no flow-through, no ZZ sleep | No clock domain synchronization; incompatible with burst-oriented controllers | Use only in legacy designs lacking clock resources or requiring simple address/data bus timing. |
Compared with CY7C1372KV18 and AS7C3256B, the 71V3577S85BGI uniquely combines 128K × 36 organization, TQFP-100 packaging, industrial temperature support, and flow-through timing - making it irreplaceable in space-constrained, burst-driven embedded systems requiring deterministic latency.
Availability
71V3577S85BGI is available at Aetrix Electronics and suitable for high-reliability networking equipment, industrial automation controllers, and aerospace data acquisition systems requiring stable component supply across extended product lifecycles.
Supply support for 71V3577S85BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory interfacing in real-time embedded systems demanding deterministic timing and industrial-grade reliability.
FAQ
What memory organization does the 71V3577S85BGI support?
The 71V3577S85BGI supports 128K × 36-bit (4.608 Mbit) organization in its primary configuration. It also supports 256K × 18-bit via address pin reuse (A17 active), as confirmed in Renesas document 6450 drw 02b. Both configurations share identical timing and control logic, with pin assignments adapting per mode.
Does the 71V3577S85BGI support both linear and interleaved burst modes?
Yes, the 71V3577S85BGI supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing (00→01→10→11) is used; when LBO = HIGH, interleaved addressing (00→01→11→10) is selected. This is a static configuration - LBO must not change during operation, per Renesas specification table 14 and 15.
What is the maximum clock frequency supported by the 71V3577S85BGI at industrial temperature?
The 71V3577S85BGI supports up to 87 MHz at industrial temperature (–40°C to +85°C), corresponding to an 8.5 ns access time (tCD). This is explicitly specified in the "Supports fast access times" section and confirmed in AC Electrical Characteristics table 16 for the 8.5 ns speed grade under industrial conditions.
How does the flow-through output architecture of the 71V3577S85BGI affect system timing?
The flow-through output architecture eliminates the output register, so data appears on I/O pins after tCD (≤8.5 ns) from the rising CLK edge - not one clock cycle later. This reduces read latency by one cycle versus pipelined SRAMs, enabling zero-wait-state operation in high-speed processors and FPGAs, as verified in timing waveform 6450 drw 06.
What power-saving modes does the 71V3577S85BGI provide, and how are they controlled?
The 71V3577S85BGI offers three power-saving modes: standby (ISB1 ≤35 mA, CE/CS inactive), clock-running standby (ISB2 ≤95 mA, CE/CS inactive but CLK active), and full sleep (IZZ ≤35 mA, ZZ = HIGH). Sleep mode is asynchronous and retains data; recovery time tZZR is 100 ns, per AC table 16.
71V3577S85BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S85BGI FAQ
1.How can I place an order for 71V3577S85BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BGI reliable?
The price and inventory of 71V3577S85BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BGI is usually 5 days.
3.What payment methods are accepted for 71V3577S85BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BGI transactions.
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4.How is shipping managed for 71V3577S85BGI?
71V3577S85BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BGI?
For technical support, including 71V3577S85BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BGI requirements.
6.How does Aetrix verify that 71V3577S85BGI is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BGI meets industry standards.
7.What is the process for return or replacement of 71V3577S85BGI?
All 71V3577S85BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BGI part is unused and in its original packaging.
Return procedure for 71V3577S85BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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