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Renesas 71V3577S85BGI8
- Part No.:
- 71V3577S85BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S85BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,935
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Product details
Overview
71V3577S85BGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features linear/interleaved burst mode selection via LBO pin. It is used in high-speed cache and buffer applications in networking and telecom equipment.
For engineers reviewing the 71V3577S85BGI8 datasheet, 71V3577S85BGI8 pinout, 71V3577S85BGI8 application, or 71V3577S85BGI8 equivalent, key selection criteria include its TQFP-100 package, 3.3V core/I/O supply, synchronous burst read/write capability, flow-through output architecture, and industrial-grade thermal reliability.
Technical Context
This SRAM implements a synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling minimal clock-to-data delay. Its internal burst address counter advances on ADV=LOW and supports four-word bursts defined by LBO state (linear or interleaved).
Write operations are fully self-timed using GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte enables). Power management includes asynchronous ZZ sleep mode (≤35 µA standby current) and synchronous chip deselect with single-cycle deactivation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via pin strapping |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency in industrial temperature range |
| Supply Voltages | VDD = VDDQ = 3.3 V ±5%; separate core (VDD) and I/O (VDDQ) rails for noise isolation |
| Operating Temperature | –40°C to +85°C industrial grade; validated for sustained operation under thermal stress |
| Power Consumption | 190 mA typical active current (8.5 ns speed); 35 mA CMOS standby (ISB1); ≤35 µA sleep mode (IZZ) |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static input requiring no runtime toggling |
| Output Architecture | Flow-through (no output register); tCD = 8.5 ns max clock-to-data; tOHZ = 3.5 ns output disable |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3577S85BGI8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36 mode |
| CLK | System Clock Input | Single-ended clock reference for all synchronous timing; defines tCYC = 11.5 ns min (87 MHz) |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip addressing |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW initiates full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO, ZZ, OE | Mode & Output Control | LBO selects burst order (asynchronous); ZZ enables ultra-low-power sleep (asynchronous); OE disables outputs (asynchronous) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; flow-through outputs; registered inputs; VDDQ-referenced I/O voltage |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3 V core; VDDQ = 3.3 V I/O; multiple VSS pins distributed for EMI suppression and signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.5 ns max ensures deterministic clock-to-data timing for tight system timing budgets |
| Self-timed burst write cycle | GW/BWE/BWx logic resolves write completion internally-no external write pulse timing constraints required |
| Single-cycle deselect | Device enters standby within one clock cycle after CE/CS deassertion-critical for low-latency memory arbitration |
| Linear/interleaved burst ordering | LBO pin statically configures burst address sequence to match processor/cache line alignment requirements |
| Industrial temperature support | Validated operation from –40°C to +85°C with full AC/DC specs-suitable for base station, industrial controller, and avionics use |
Applications
| Networking Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: High-throughput packet buffering in Ethernet switch ASIC interfaces where burst reads must sustain >300 MB/s line-rate throughput. IC Role / Device Role / Timing Role: Primary synchronous SRAM buffer between MAC and switching fabric; provides zero-wait-state burst reads aligned to 4-word cache lines. Use Value: Flow-through outputs and 8.5 ns tCD enable sub-10 ns per-word latency; single-cycle deselect prevents pipeline stalls during context switches. |
Use Scenario: Real-time DSP instruction/data caching in multi-channel TDM line cards operating in extended temperature cabinets. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/ADV sequencing) serving as shared instruction/data memory for dual-core DSP subsystems. Use Value: Industrial temp rating (–40°C to +85°C) and 35 µA sleep current ensure reliability in uncooled chassis; LBO pin matches TI C6000 burst order. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
|
Use Scenario: Non-volatile event logging in programmable logic controllers where SRAM buffers sensor timestamps before flash commit. IC Role / Device Role / Timing Role: Battery-backed SRAM buffer with ZZ sleep mode activated between logging intervals to minimize energy draw. Use Value: ZZ pin reduces current to ≤35 µA while retaining data-extending backup battery life beyond 1 year at 25°C. |
Use Scenario: High-speed radar echo sample buffering in automotive ADAS modules requiring deterministic 4-word burst reads for FFT preprocessing. IC Role / Device Role / Timing Role: Synchronous FIFO staging memory interfaced directly to ADC output and DSP input buses. Use Value: 87 MHz clock support and 4-word burst deliver 1.25 Gbps effective bandwidth-meeting 12-bit @ 100 MSPS real-time capture needs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | 128K × 32-bit (4-Mbit), 85 MHz max, 119-ball BGA only; no LBO pin; uses ADV-only burst control | Lacks linear/interleaved burst flexibility; requires PCB redesign for BGA footprint and routing | Select when BGA packaging and strict 32-bit bus width are mandatory; verify burst compatibility with host controller |
| AS7C3256B-85JCN | 32K × 36-bit (1.152-Mbit), 85 MHz, 100-pin TQFP; no burst counter; asynchronous OE; higher tAA (12 ns) | Lower density and no burst capability-requires software-managed multi-cycle reads for same throughput | Choose only for cost-sensitive, lower-bandwidth applications where burst acceleration is unnecessary |
Compared with CY7C1371BV33-85BGXI and AS7C3256B-85JCN, the 71V3577S85BGI8 uniquely delivers 4.608-Mbit density in TQFP-100 with configurable burst order and flow-through timing-enabling direct replacement of legacy 71V3577S85BG without layout change or firmware update.
Availability
71V3577S85BGI8 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, industrial PLC data logs, and radar signal processing FIFOs requiring stable component supply across extended temperature ranges.
Supply support for 71V3577S85BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems needing low-latency, burst-capable SRAM-designed specifically for cache, buffer, and FIFO roles in telecom, test equipment, and real-time control.
FAQ
What is the maximum clock frequency supported by the 71V3577S85BGI8 in industrial temperature range?
The 71V3577S85BGI8 supports up to 87 MHz clock frequency in the –40°C to +85°C industrial temperature range, corresponding to an 8.5 ns access time (tCD). This is validated across full VDD/VDDQ tolerance (3.135 V–3.465 V) and specified in the AC Electrical Characteristics table under "8.5ns" column for industrial grade.
Does the 71V3577S85BGI8 support both 128K × 36 and 256K × 18 configurations on the same device?
Yes, the 71V3577S85BGI8 supports both configurations via pin strapping: in 128K × 36 mode, A0–A16 are used as address lines and BW3/BW4 are functional; in 256K × 18 mode, A17 becomes active and BW3/BW4 are NC. The device auto-configures based on address pin usage and is not reprogrammable-configuration is hardware-determined at boot.
How does the LBO pin affect burst behavior in the 71V3577S85BGI8?
The LBO pin selects burst address order: when pulled LOW (VSS), it enables linear burst (00→01→10→11); when pulled HIGH (VDD), it enables interleaved burst (00→01→11→10). LBO is asynchronous and static-must remain stable during burst operation. Its state determines the A1/A0 sequence generated by the internal burst counter for all four words.
Can the 71V3577S85BGI8 be used in a system requiring zero-power retention during sleep mode?
Yes-the 71V3577S85BGI8 guarantees data retention in full sleep mode (ZZ HIGH) with IZZ ≤35 µA at +85°C. Core and I/O supplies remain powered, but clocks and outputs are gated. No external refresh or backup power is needed, making it suitable for battery-backed industrial logging and low-duty-cycle radar wake-up buffers.
What is the purpose of the ADV, ADSP, and ADSC pins on the 71V3577S85BGI8?
ADV advances the internal burst counter for subsequent words in a burst sequence. ADSP (active LOW) loads the address register from the processor bus; ADSC (active LOW) loads it from the cache controller bus. Both are synchronous inputs gated by CE, enabling dual-bus address sourcing without external multiplexing-critical for cache-coherent designs.
71V3577S85BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S85BGI8 FAQ
1.How can I place an order for 71V3577S85BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BGI8 reliable?
The price and inventory of 71V3577S85BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BGI8 is usually 5 days.
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71V3577S85BGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BGI8?
For technical support, including 71V3577S85BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BGI8 requirements.
6.How does Aetrix verify that 71V3577S85BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BGI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BGI8?
All 71V3577S85BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BGI8 part is unused and in its original packaging.
Return procedure for 71V3577S85BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BGI8 Tags
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