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Renesas 71V3577S85BQ
- Part No.:
- 71V3577S85BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S85BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,563
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Product details
Overview
71V3577S85BQ from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz, and linear/interleaved burst mode controlled by the LBO pin. It features synchronous address latching via ADSP/ADSC, global and byte-level write control (GW/BW1–BW4), and industrial temperature support (–40°C to +85°C) in TQFP package.
For engineers reviewing the 71V3577S85BQ datasheet, 71V3577S85BQ pinout, 71V3577S85BQ application, or 71V3577S85BQ equivalent, key selection criteria include burst counter timing, single-cycle deselect capability, 3.3V I/O compatibility, flow-through read latency, and TQFP-100 mechanical fit for high-speed cache or buffer subsystems.
Technical Context
The 71V3577S85BQ implements a synchronous, clock-driven interface with registered address and control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4) and flow-through data outputs-no output register introduces zero-cycle output delay after clock edge. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with LBO-selectable linear or interleaved addressing sequences.
Write operations are self-timed and support multiple modes: global write (GW active), individual byte writes (BWE + BWx), or mixed configurations. Power management includes asynchronous ZZ sleep mode (≤35 µA ISB2) and synchronous standby states, all operating from separate 3.3V core (VDD) and I/O (VDDQ) supplies with independent ground (VSS) connections.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin multiplexing in same package |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency in commercial and industrial temp ranges |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); dual-rail separation enables noise isolation |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static configuration |
| Power-Down Current | IZZ = 35 µA max in full sleep mode (ZZ = HIGH); ISB2 = 95 µA max with clock running but deselected |
| Operating Temperature | –40°C to +85°C industrial grade; validated across full voltage and timing specs |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); lead-free and RoHS-compliant |
Pinout & Package
71V3577S85BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed thermal pad (not electrically connected). Pinout conforms to Renesas PKG100 layout for 128K × 36 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching via ADSP/ADSC; A0–A16 used for 128K × 36; A17 unused in this config |
| CLK | System Clock Input | Single-ended CMOS input; all synchronous timing referenced to rising edge |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) trigger address register load; both active LOW |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; internally pulled to VDD if floating |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no latency added) |
| ZZ | Sleep Mode Enable | Asynchronous HIGH-active input; gates internal clock and reduces current to ≤35 µA; internally pulled to VSS |
| VDD / VDDQ / VSS | Power Supplies | VDD (core), VDDQ (I/O), and VSS (ground) require separate decoupling; no power sequencing required |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Zero-cycle output register eliminates read latency; tCD = 8.5 ns directly from CLK rise to valid data |
| Single-cycle deselect | Chip deactivation completes within one clock cycle-no residual burst or pipeline flush required |
| Configurable burst addressing | LBO pin statically selects linear or interleaved 4-word burst order without firmware overhead |
| Dual-supply I/O interface | Independent VDDQ rail isolates I/O switching noise from core logic, improving signal integrity |
| Industrial-grade reliability | Qualified for –40°C to +85°C operation with full AC/DC specs guaranteed across temperature and voltage |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: L2/L3 cache line buffering in RISC-based embedded processors requiring low-latency random access. IC Role / Device Role / Timing Role: Synchronous SRAM providing 8.5 ns flow-through read access and burst-aligned data delivery to match processor bus cycles. Use Value: Eliminates wait states during cache fill; 4-word burst mode delivers full cache line (36-bit × 4) per address request. | Use Scenario: Temporary storage of Ethernet or PCIe packet payloads in switch fabric or protocol accelerator ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter buffer supporting 87 MHz sustained read/write with byte-selectable writes for partial packet updates. Use Value: BW1–BW4 enable precise 9-bit byte masking-critical for header modification without full-line rewrite. |
| Industrial Motion Controller Memory | Video Frame Buffer Interface |
Use Scenario: Real-time trajectory buffer in CNC or servo drive controllers where deterministic access timing is safety-critical. IC Role / Device Role / Timing Role: Deterministic 8.5 ns access with guaranteed industrial temp operation ensures jitter-free position update cycles. Use Value: ZZ sleep mode reduces idle power to ≤35 µA while preserving data-enabling energy-efficient standby between motion segments. | Use Scenario: Intermediary frame buffer between image sensor interface and video encoder in broadcast or medical imaging systems. IC Role / Device Role / Timing Role: 36-bit wide interface matches common YUV422 or RGB565 pixel packing; flow-through reads minimize display pipeline latency. Use Value: Dual 3.3V supplies (VDD/VDDQ) suppress I/O noise coupling into analog video signal paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BQ | 8.0 ns access time (100 MHz max); identical pinout, package, and feature set | Higher bandwidth requirement; tighter setup/hold margins needed on address/control lines | Select when system clock exceeds 87 MHz and board layout supports faster timing closure |
| AS7C3256A-10TIN | 128K × 32-bit organization; 10 ns access; 3.3V only; no burst counter or LBO control | Lacks burst addressing and flow-through output-requires external logic for multi-word transfers | Choose for cost-sensitive designs where burst mode is unnecessary and 4-bit narrower bus is acceptable |
Compared with 71V3577S85BQ, the 80BQ variant offers higher speed at identical footprint, while the AS7C3256A-10TIN trades burst functionality and 36-bit width for lower cost and simpler interface-requiring redesign for burst-dependent systems.
Availability
71V3577S85BQ is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet processing, industrial motion control, and video frame buffering requiring stable component supply across extended temperature ranges.
Supply support for 71V3577S85BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems needing deterministic, low-latency memory with burst capability-designed specifically for cache, buffer, and real-time control applications.
FAQ
What is the maximum clock frequency supported by the 71V3577S85BQ?
The 71V3577S85BQ supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This maximum frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The 6.5 ns speed grade (133 MHz) is not available for the 71V3577S85BQ-it is restricted to commercial-grade TQFP variants only.
Does the 71V3577S85BQ support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S85BQ is functionally configurable for either 128K × 36 or 256K × 18 organization. Pin mapping differs between configurations-A17 is used as address bit in 256K × 18 mode but is NC in 128K × 36 mode (as implemented in 71V3577S85BQ). The device automatically adapts based on address decoding and control signal timing per Renesas specification.
How does the LBO pin affect burst behavior in the 71V3577S85BQ?
The LBO pin on the 71V3577S85BQ statically selects burst order: LOW enables linear addressing (00→01→10→11), HIGH enables interleaved (00→01→11→10). It is an asynchronous input with internal VDD pull-up; must remain stable during burst operation. This hardware-selectable mode eliminates software overhead and guarantees deterministic address sequencing in real-time systems.
What is the power consumption of the 71V3577S85BQ in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3577S85BQ draws ≤35 µA typical supply current (IZZ), preserving data integrity while minimizing system power. This is distinct from standby modes (ISB1/ISB2), where current ranges from 30–95 µA depending on clock activity and chip select state. Sleep mode recovery time (tZZR) is guaranteed at 100 ns.
Is the 71V3577S85BQ pin-compatible with other devices in the 71V3577/79 family?
Yes, the 71V3577S85BQ shares identical 100-pin TQFP (PKG100) pinout with other speed grades (e.g., 71V3577S80BQ, 71V3577S75BQ) and the 71V3579S variants in the same package. Pin functions, power/ground locations, and I/O assignments are fully compatible-enabling drop-in replacement for speed or temperature grade changes without PCB revision.
71V3577S85BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S85BQ FAQ
1.How can I place an order for 71V3577S85BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BQ reliable?
The price and inventory of 71V3577S85BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BQ is usually 5 days.
3.What payment methods are accepted for 71V3577S85BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S85BQ?
71V3577S85BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BQ?
For technical support, including 71V3577S85BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BQ requirements.
6.How does Aetrix verify that 71V3577S85BQ is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BQ meets industry standards.
7.What is the process for return or replacement of 71V3577S85BQ?
All 71V3577S85BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BQ part is unused and in its original packaging.
Return procedure for 71V3577S85BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BQ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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