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Renesas 71V3577S85BQ8
- Part No.:
- 71V3577S85BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S85BQ8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,690
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Product details
Overview
71V3577S85BQ8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time, and support for linear/interleaved burst modes. It features synchronous address latching via ADSP/ADSC, global and byte-level write control, and single-cycle deselect. Used in high-speed cache buffers and network packet memory subsystems requiring deterministic timing.
For engineers reviewing the 71V3577S85BQ8 datasheet, 71V3577S85BQ8 pinout, 71V3577S85BQ8 application, or 71V3577S85BQ8 equivalent, key selection criteria include TQFP-100 packaging, industrial temperature range (–40°C to +85°C), 8.5 ns / 87 MHz operation, burst counter behavior under LBO control, and compatibility with 3.3V I/O interfaces in cache-coherent systems.
Technical Context
The 71V3577S85BQ8 implements a synchronous, clock-driven interface with registered address and control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4) and flow-through data outputs-no output register introduces zero latency between array access and I/O assertion. Burst addressing is managed by an internal binary counter synchronized to CLK, with sequence order determined by the static LBO pin state.
Write operations are self-timed and support four configurations: global write (GW low), byte-select writes (BWE low + active BWx), and combinations thereof. Power management includes asynchronous ZZ-controlled sleep mode with guaranteed data retention and sub-35 µA ISB2 current at fMAX during deselected clock-running states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address remapping |
| Access Time / Max Frequency | 8.5 ns / 87 MHz - guarantees deterministic read latency for burst-sequential data delivery |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic without level shifters |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment in CPU/memory controllers |
| Power-Down Current | IZZ = 35 µA max (industrial temp) - enables low-power idle states in always-on networking hardware |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems including telecom infrastructure |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - compatible with standard SMT reflow profiles and automated optical inspection |
Pinout & Package
71V3577S85BQ8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is marked by a dot or beveled corner per standard orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch inputs; A0–A16 used for 128K×36 mode, A17 enables 256K×18 configuration |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| ADSP / ADSC | Address Status Inputs | Active-low signals indicating processor/cache address validity; gate address register loading and burst initiation |
| ADV | Burst Address Advance | Active-low input controlling burst counter increment; HIGH suspends burst, enabling single-address reads/writes |
| LBO | Linear/Interleaved Burst Order | Static DC input selecting burst address sequence (LOW = linear, HIGH = interleaved); must remain stable during operation |
| ZZ | Sleep Mode Enable | Asynchronous active-high input disabling internal clock and reducing supply current to ≤35 µA; retains memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with flow-through output path; no output register ensures minimal tCD delay |
| GW / BWE / BW1–BW4 | Write Control | GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit bytes (BW3/BW4 unused in 256K×18 mode) |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.5 ns matches access time, enabling cycle-accurate timing in pipelined systems |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle - prevents bus contention during rapid context switching in multi-master environments |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word sequences - aligns with x86 or ARM cache line fetch patterns without software overhead |
| Self-timed write cycle | Internal timing logic resolves write completion without external strobes - simplifies control logic and reduces PCB routing complexity |
| Industrial temperature qualification | Validated operation from –40°C to +85°C - suitable for base station RF modules and industrial PLC memory buffers |
Applications
| High-Speed Cache Buffer | Network Packet Memory |
|---|---|
Use Scenario: L2 cache buffer between RISC-V core and DDR controller in edge AI inference accelerator. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 8.5 ns read latency and burst-aligned data delivery for 32-byte cache lines. Use Value: Enables zero-wait-state execution of memory-intensive convolution kernels by guaranteeing burst-sequential word availability on consecutive clocks. | Use Scenario: Temporary storage for ingress/egress packet headers in 10G Ethernet switch ASIC. IC Role / Device Role / Timing Role: Flow-through SRAM acting as header FIFO with programmable burst depth and single-cycle deselect for dynamic queue management. Use Value: Supports line-rate packet processing at 10 Gbps by eliminating output register skew and enabling precise timing alignment with SerDes PHY clocks. |
| Industrial PLC Data Buffer | Avionics Sensor Interface Memory |
Use Scenario: Real-time I/O data staging between fieldbus controller and safety-critical motion control FPGA. IC Role / Device Role / Timing Role: Industrial-temp SRAM buffering analog/digital sensor readings with guaranteed data retention during ZZ sleep mode. Use Value: Maintains deterministic response under thermal stress (–40°C to +85°C) while reducing system power by >70% during idle polling intervals. | Use Scenario: Time-stamped sensor fusion buffer in flight control unit receiving inertial measurement unit (IMU) and GPS data streams. IC Role / Device Role / Timing Role: Synchronous SRAM with ADSP/ADSC handshake supporting precise timestamp correlation across heterogeneous sensor inputs. Use Value: Enables sub-microsecond timestamp alignment across 36-bit parallel sensor words using synchronous address capture and burst-sequential readout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV12836B | 128K × 36, 3.3V, 8 ns access, TQFP-100, but lacks ADSP/ADSC dual-address-status interface and LBO-configurable burst order | Requires external logic for cache controller handshake; not drop-in for ADSP-based burst initiation | Choose when simplified control interface suffices and burst sequence is fixed in firmware |
| Cypress CY7C1375D | 128K × 36, 3.3V, 8 ns, TQFP-100, supports flow-through output and ZZ sleep, but uses CE-only selection (no CS0/CS1 dual-enable scheme) | Compatible for basic burst reads but incompatible with systems relying on CS0/CS1 chip decode for multi-SRAM banking | Prefer when board layout uses single CE decoding and does not require dual-chip-select arbitration |
Compared with IS61WV12836B and CY7C1375D, the 71V3577S85BQ8 uniquely integrates ADSP/ADSC dual-address-status inputs and LBO-selectable burst sequencing-enabling tighter integration with cache-coherent processors and eliminating need for external burst address generation logic.
Availability
71V3577S85BQ8 is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet memory, industrial PLC data staging, and avionics sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for 71V3577S85BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-performance synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in cache controllers, network processors, and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V3577S85BQ8?
The 71V3577S85BQ8 supports up to 87 MHz maximum clock frequency, corresponding to its 8.5 ns access time specification. This frequency is validated across the full industrial temperature range (–40°C to +85°C) and applies to both 128K × 36 and 256K × 18 configurations when used in TQFP-100 packaging. The 71V3577S85BQ8 achieves this performance with guaranteed tCD ≤ 8.5 ns and tCYC ≥ 11.5 ns.
Does the 71V3577S85BQ8 support both linear and interleaved burst modes?
Yes, the 71V3577S85BQ8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when LBO is HIGH, it executes interleaved burst (00→01→11→10). This selection is static and must remain stable during operation. The 71V3577S85BQ8 implements the full 4-word burst sequence with wraparound behavior as defined in the datasheet's burst tables.
How does the 71V3577S85BQ8 handle power-down and data retention?
The 71V3577S85BQ8 enters full sleep mode when the ZZ pin is driven HIGH, reducing supply current to ≤35 µA (industrial grade) while guaranteeing data retention. In this state, the internal clock is gated, and all outputs go high-impedance. The 71V3577S85BQ8 requires tZZR ≥ 100 ns recovery time after ZZ returns LOW before valid operations resume. VDD and VDDQ must remain within 3.135 V–3.465 V during sleep to maintain retention.
What are the key differences between the 71V3577S85BQ8 and the 71V3579S variant?
The 71V3577S85BQ8 is configured for 128K × 36 organization, while the 71V3579S supports 256K × 18. Pin assignments differ: BW3 and BW4 are functional on the 71V3577S85BQ8 but not applicable on the 71V3579S. Address mapping also varies - A17 is used for row extension in 256K×18 mode, whereas the 71V3577S85BQ8 uses A0–A16. Both share identical timing, power, and control architectures including LBO, ZZ, ADSP/ADSC, and flow-through output design.
Is the 71V3577S85BQ8 compatible with 3.3V-only system interfaces?
Yes, the 71V3577S85BQ8 is fully compatible with 3.3V-only interfaces: VDD and VDDQ are both specified at 3.3 V ±5%, VIH is 2.0 V min (compatible with 3.3V CMOS logic), and VOL is ≤0.4 V at IOL = +8 mA. Its 3.3V I/O structure eliminates need for level shifters when interfacing with FPGAs, ASICs, or microcontrollers operating at 3.3V, and the 71V3577S85BQ8 meets JEDEC JESD8-12 standards for 3.3V signaling.
71V3577S85BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S85BQ8 FAQ
1.How can I place an order for 71V3577S85BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BQ8 reliable?
The price and inventory of 71V3577S85BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BQ8 is usually 5 days.
3.What payment methods are accepted for 71V3577S85BQ8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BQ8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S85BQ8?
71V3577S85BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BQ8?
For technical support, including 71V3577S85BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BQ8 requirements.
6.How does Aetrix verify that 71V3577S85BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BQ8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BQ8?
All 71V3577S85BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BQ8 part is unused and in its original packaging.
Return procedure for 71V3577S85BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BQ8 Tags
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