Renesas 71V3577S85BQG

Overview

71V3577S85BQG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at 87 MHz, TQFP-100 package, and industrial temperature support (–40°C to +85°C). It delivers burst-mode data streaming for high-bandwidth cache and buffer applications in networking and telecom line cards.

For engineers reviewing the 71V3577S85BQG datasheet, 71V3577S85BQG pinout, 71V3577S85BQG application, or 71V3577S85BQG equivalent, key selection criteria include its 8.5 ns tCD timing, linear/interleaved burst control via LBO, single-cycle deselect capability, and compatibility with 3.3V I/O systems requiring low-latency memory buffering.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, unregistered (flow-through) outputs, and a 4-word burst counter driven by ADV and configured by LBO. It supports both global write (GW) and byte-selectable writes (BW1–BW4) under BWE control.

Its dual configuration-128K × 36 or 256K × 18-is determined by address mapping and pin strapping (e.g., A17 usage), with internal logic enabling self-timed write cycles and asynchronous sleep mode activation via ZZ input.

Key Specifications

Pinout & Package

71V3577S85BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 footprint with dedicated VDD/VDDQ/VSS banks, 18 address inputs (A0–A17), 36 data I/Os plus 4 parity bits (I/O0–I/O31, I/OP1–I/OP4), and 12 control signals including ADV, ADSP, ADSC, GW, BWE, BW1–BW4, OE, CE, CS0, CS1, LBO, and ZZ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-85BAXI and AS7C3256A-85JCN, the 71V3577S85BQG uniquely combines TQFP-100 packaging, industrial temperature range, flow-through outputs, and hardware-configurable burst ordering - making it optimal for new designs requiring deterministic low-latency buffering with minimal layout change.

Availability

71V3577S85BQG is available at Aetrix Electronics and suitable for high-reliability industrial control, telecom infrastructure, and avionics applications requiring stable component supply, long-term lifecycle management, and guaranteed industrial temperature performance.

Supply support for 71V3577S85BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family was designed specifically for high-bandwidth, low-latency buffering in cache-coherent subsystems and packet-processing pipelines where deterministic timing and burst efficiency are critical.

FAQ

What memory organization does the 71V3577S85BQG support?

The 71V3577S85BQG supports 128K × 36-bit (4.608 Mbit) organization by default, with pin-strapped compatibility for 256K × 18-bit mode using A17. This dual-mode flexibility allows system designers to optimize data bus width and address depth without changing the 71V3577S85BQG footprint or timing model.

Does the 71V3577S85BQG support burst mode, and how is it controlled?

Yes, the 71V3577S85BQG supports 4-word synchronous burst mode controlled by ADV (active-low) and LBO (linear/interleaved selector). ADV advances the internal burst counter on each clock edge; LBO sets the address increment pattern. Both signals are fully documented in the 71V3577S85BQG datasheet timing tables and functional description.

What is the significance of the "85" in 71V3577S85BQG?

The "85" in 71V3577S85BQG denotes the 8.5 ns access time (tCD) speed grade, validated across the industrial temperature range (–40°C to +85°C). This grade guarantees ≤8.5 ns clock-to-data delay for the first burst word under specified VDD/VDDQ and loading conditions, directly impacting system-level throughput in burst-intensive applications.

Can the 71V3577S85BQG operate with separate core and I/O supplies?

Yes, the 71V3577S85BQG requires two independent 3.3 V supplies: VDD (core logic) and VDDQ (I/O drivers). This separation allows independent filtering and noise management, improving signal integrity on high-speed data buses. The 71V3577S85BQG datasheet specifies strict decoupling requirements for both rails to maintain timing compliance.

How does the ZZ pin function in the 71V3577S85BQG?

The ZZ pin on the 71V3577S85BQG provides asynchronous entry into full sleep mode when driven HIGH, reducing supply current to 30 µA while retaining memory contents. It features an internal pull-down, so floating ZZ defaults to active mode. Recovery requires tZZR ≥100 ns after ZZ returns LOW, as defined in the 71V3577S85BQG AC characteristics table.