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Renesas 71V3577S85BQG8
- Part No.:
- 71V3577S85BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S85BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,233
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Product details
Overview
71V3577S85BQG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz, and burst counter support for high-bandwidth cache and memory subsystems in networking and telecom line cards.
For engineers reviewing the 71V3577S85BQG8 datasheet, 71V3577S85BQG8 pinout, 71V3577S85BQG8 application, or 71V3577S85BQG8 equivalent, key selection criteria include its TQFP-100 package, linear/interleaved burst mode via LBO, single-cycle deselect, and industrial-grade temperature range (–40°C to +85°C) with 3.3V core/I/O supply.
Technical Context
This device implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs-enabling deterministic timing without output register latency. It supports four-word burst reads/writes initiated by ADV and controlled by LBO for linear or interleaved addressing sequences.
The internal architecture includes separate write registers per 9-bit byte (BW1–BW4), global write (GW), byte write enable (BWE), and asynchronous sleep mode (ZZ) with 30 µA full-sleep current. Chip select logic uses CE, CS0 (active HIGH), and CS1 (active LOW) for hierarchical enable control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin-compatible variant mapping |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency in commercial and industrial temperature ranges |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); no power sequencing required |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation across full range |
| Power Consumption | 180 mA typical operating current (8.5 ns speed); 30 µA full-sleep current with ZZ HIGH |
| Burst Mode Control | LBO input selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static configuration |
| Output Architecture | Flow-through (unregistered) outputs; data appears on I/O pins after tCD delay from CLK rising edge |
Pinout & Package
71V3577S85BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked via corner cut; pin 64 (ZZ) may be left unconnected for active-mode-only operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching triggered by ADSP/ADSC falling edge and CE low; A0–A16 used for 128K×36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock divider |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | Asynchronous static input; LOW = linear burst (00→01→10→11); HIGH = interleaved burst (00→01→11→10) |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte writes; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) |
| OE | Output Enable | Asynchronous; LOW enables flow-through outputs; HIGH forces I/O pins to high-impedance state |
| ZZ | Sleep Mode | Asynchronous HIGH disables internal clock and reduces current to 30 µA; retains data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path; unregistered (flow-through) output path |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay; enables tCD = 8.5 ns read access directly from CLK edge |
| Single-cycle deselect capability | Chip deactivation completes within one clock cycle-critical for burst termination in cache coherency protocols |
| Configurable 4-word burst addressing | LBO pin selects between linear or interleaved sequences without firmware overhead or external logic |
| Low-power sleep mode with data retention | ZZ HIGH reduces ICC to 30 µA while preserving SRAM contents-enables rapid wake-up in power-gated systems |
| Byte-selectable write granularity | Four independent 9-bit write enables (BW1–BW4) allow partial writes without read-modify-write cycles |
Applications
| High-Speed Network Line Cards | Telecom Baseband Processing |
|---|---|
Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM serving as first-level packet descriptor cache with deterministic 8.5 ns read access. Use Value: Enables full-line-rate header parsing without pipeline stalls; flow-through outputs align with ASIC clock domain without added register delay. | Use Scenario: Storing channelized frame buffers in LTE/5G remote radio head (RRH) digital front-end. IC Role / Device Role / Timing Role: Synchronous SRAM providing burst-aligned data storage for multi-carrier FFT/IFFT processing pipelines. Use Value: Linear burst mode matches sequential FFT bin access patterns; industrial temp rating ensures reliability in outdoor base station enclosures. |
| Industrial PLC Motion Controllers | Avionics Data Acquisition Units |
Use Scenario: Real-time interpolation table storage for multi-axis servo drive trajectory generation. IC Role / Device Role / Timing Role: Deterministic-access memory holding position/velocity lookup tables accessed via burst reads during motion profile execution. Use Value: Single-cycle deselect allows rapid context switching between motion profiles; 85°C rating supports convection-cooled control cabinet environments. | Use Scenario: High-integrity sensor data buffering in flight control computers requiring DO-254 compliance. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM storing calibrated ADC samples prior to ARINC 429 transmission. Use Value: Flow-through architecture eliminates metastability risk from output register sampling; ZZ sleep mode supports power-cycled health monitoring intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375BV33-85BGXI | 128K × 36, 3.3V, 85 MHz max, 8.5 ns access; 119-ball BGA only (no TQFP option) | Requires PCB redesign for BGA footprint; lacks LBO-configurable burst order | Select when BGA packaging and higher-frequency margin are prioritized over pin compatibility and burst flexibility |
| AS7C3256A-85JCIN | 128K × 32, 3.3V, 85 MHz, 8.5 ns; no burst counter or ADV/LBO controls-basic async/sync dual-mode | Supports only single-word random access; no hardware burst acceleration or suspend capability | Select for cost-sensitive designs where burst functionality is unnecessary and 4-bit data width reduction is acceptable |
Compared with CY7C1375BV33-85BGXI and AS7C3256A-85JCIN, the 71V3577S85BQG8 uniquely delivers configurable burst addressing in TQFP-100 with industrial temperature support-making it optimal for legacy-compatible, high-reliability embedded systems requiring deterministic latency and flexible memory access patterns.
Availability
71V3577S85BQG8 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, industrial PLC motion controllers, and avionics data acquisition units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S85BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded memory subsystems requiring deterministic timing, burst bandwidth, and industrial reliability-designed specifically for cache, buffer, and frame store roles in real-time communications and control equipment.
FAQ
What is the maximum clock frequency supported by the 71V3577S85BQG8?
The 71V3577S85BQG8 supports up to 87 MHz clock frequency at 8.5 ns access time across both commercial and industrial temperature ranges. This speed grade is validated for continuous operation from –40°C to +85°C and applies to the TQFP-100 package variant specified by the 'BQG8' suffix.
Does the 71V3577S85BQG8 support both linear and interleaved burst modes?
Yes, the 71V3577S85BQG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is a static input and must remain stable during burst operation.
What is the function of the ZZ pin on the 71V3577S85BQG8?
The ZZ pin on the 71V3577S85BQG8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to 30 µA while retaining stored data. The device wakes up synchronously on the next CLK rising edge after ZZ returns LOW, with tZZR = 100 ns recovery time.
Can the 71V3577S85BQG8 operate with different supply voltages for core and I/O?
No-the 71V3577S85BQG8 requires matched 3.3 V ±5% supplies: VDD for core logic and VDDQ for I/O drivers. Both rails must be within specification simultaneously; the device does not support split-rail operation or voltage translation. Power sequencing is not required, but no I/O pin voltage may exceed VDDQ during ramp-up.
How many address bits are used in 128K × 36 mode for the 71V3577S85BQG8?
In 128K × 36 mode, the 71V3577S85BQG8 uses 17 address bits (A0–A16) to access the full 131,072-word space. A17 is unused in this configuration and may be left unconnected or tied to VSS. The pinout diagram confirms A17 is NC for 128K×36 operation in TQFP-100.
71V3577S85BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S85BQG8 FAQ
1.How can I place an order for 71V3577S85BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BQG8 reliable?
The price and inventory of 71V3577S85BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BQG8 is usually 5 days.
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71V3577S85BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BQG8?
For technical support, including 71V3577S85BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BQG8 requirements.
6.How does Aetrix verify that 71V3577S85BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BQG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BQG8?
All 71V3577S85BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BQG8 part is unused and in its original packaging.
Return procedure for 71V3577S85BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BQG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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