Renesas 71V3577S85BQI

Overview

71V3577S85BQI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports linear/interleaved burst modes via LBO input and delivers single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V3577S85BQI datasheet, 71V3577S85BQI pinout, 71V3577S85BQI application, or 71V3577S85BQI equivalent, key selection criteria include its 8.5 ns tCD timing, 36-bit data width with parity pins (I/OP1–I/OP4), synchronous burst counter with ADV/LBO control, and dual chip-select logic (CS0/CS1) enabling multi-bank memory subsystems.

Technical Context

The 71V3577S85BQI implements a fully synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path-eliminating output register delay for minimal read latency. Its internal burst address counter advances on ADV=LOW and selects sequence order via static LBO pin configuration.

Write operations support global (GW) or byte-level (BW1–BW4 + BWE) control with self-timed write cycles; power management includes asynchronous ZZ sleep mode (IZZ ≤ 35 µA) and synchronous standby (ISB1 ≤ 35 mA). The device uses separate VDD (core) and VDDQ (I/O) supplies, both at 3.3V ±5%.

Key Specifications

Pinout & Package

71V3577S85BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch, with exposed thermal pad (not electrically connected). Pin 1 marked via corner cut; pin 14 is VSS-compatible but may be left floating if voltage < VIL; pin 64 (ZZ) may be unconnected to force active mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-85BZXI and AS7C33128P-85TIN, the 71V3577S85BQI uniquely supports hardware-configurable burst order (LBO) and guarantees 100 ns ZZ recovery - critical for systems requiring rapid wake-from-sleep with deterministic timing.

Availability

71V3577S85BQI is available at Aetrix Electronics and suitable for high-speed network buffers, industrial PLC data caches, and telecom baseband processor caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3577S85BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S85BQI belongs to Renesas' high-performance synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in networking, telecom, and real-time control applications.

FAQ

What is the maximum clock frequency supported by the 71V3577S85BQI?

The 71V3577S85BQI supports up to 87 MHz clock frequency at 8.5 ns access time (tCD), validated across the industrial temperature range (–40°C to +85°C). This speed grade is available in the 100-pin TQFP package and requires VDD/VDDQ = 3.3V ±5%. Higher frequencies (e.g., 117 MHz at 7.5 ns) apply only to commercial-grade variants, not the 71V3577S85BQI.

Does the 71V3577S85BQI support both linear and interleaved burst modes?

Yes, the 71V3577S85BQI supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). LBO is an asynchronous static input and must remain stable during operation.

What is the function of the ADV pin on the 71V3577S85BQI?

The ADV (Burst Address Advance) pin on the 71V3577S85BQI controls burst counter progression. When ADV = LOW at the rising edge of CLK, the internal burst counter increments to generate the next sequential address. When ADV = HIGH, burst advancement is suspended - allowing repeated access to the same base address or controlled multi-cycle writes without address change.

How does the 71V3577S85BQI handle power-down and data retention?

The 71V3577S85BQI enters ultra-low-power sleep mode when ZZ = HIGH, reducing supply current to ≤35 µA while guaranteeing full data retention. In this state, the internal clock is gated, but VDD and VDDQ must remain within specification (3.3V ±5%). Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume.

Is the 71V3577S85BQI pin-compatible with other devices in the 71V3577/79 family?

The 71V3577S85BQI shares the same 100-pin TQFP footprint and pinout with other speed grades (e.g., 71V3577S75BQI, 71V3577S65BQI) and the 256K×18 variant 71V3579S85BQI, though pin functions differ slightly (e.g., BW3/BW4 are NC on 71V3579). Always verify memory organization mapping (A16/A17 usage) and timing parameters before substitution.