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Renesas 71V3577S85BQI8
- Part No.:
- 71V3577S85BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S85BQI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,514
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Product details
Overview
71V3577S85BQI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst modes via LBO input, single-cycle deselect, and self-timed write using GW/BWE/BWx controls - deployed in high-performance cache and packet buffer subsystems.
For engineers reviewing the 71V3577S85BQI8 datasheet, 71V3577S85BQI8 pinout, 71V3577S85BQI8 application, or 71V3577S85BQI8 equivalent, key selection criteria include TQFP-100 package compatibility, 3.3V I/O voltage tolerance, flow-through read latency, burst counter behavior under ADV/LBO control, and ZZ-controlled sleep mode power reduction to 30 µA.
Technical Context
This SRAM implements a synchronous, register-based address/data path with no output register - enabling true flow-through read timing where data appears on I/O pins after tCD (≤8.5 ns) from CLK rise. Burst addressing is managed by an internal binary counter synchronized to ADV, with sequence order determined statically by LBO level before operation.
Write control is hierarchical: GW enables full 36-bit writes; BWE gates byte-write enables BW1–BW4 (each controlling 9-bit data segments); all synchronous inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BWx) are sampled on CLK rising edge with defined setup/hold times. OE remains asynchronous for output enable/disable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit), configured as 36-bit wide data bus with A0–A16 address lines |
| Access Time / Max Frequency | 8.5 ns access time supports up to 87 MHz clock frequency in industrial temperature range |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O), enabling direct interface with 3.3V logic families |
| Operating Temperature | –40°C to +85°C industrial grade, validated for sustained operation across full range |
| Power Consumption | 190 mA typical active current (IDD), 35 mA standby (ISB1), 35 µA deep sleep (IZZ) with ZZ HIGH |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; ADV advances counter synchronously on CLK |
| Output Architecture | Flow-through (no output register): data valid tCD after CLK rise, eliminating pipeline delay in read cycles |
Pinout & Package
71V3577S85BQI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; pin 14 is VSS-compatible but not mandatory tie-down; pin 64 (ZZ) may float to maintain active mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | Synchronous address latching on ADSP/ADSC low + CE low; defines 128K-word space |
| CLK | Master Clock Input | Edge-triggered reference for all synchronous inputs and internal timing; no internal buffering |
| ADV | Burst Address Advance | Active-low synchronous signal that increments internal burst counter on CLK rise |
| LBO | Linear/Interleaved Burst Order | Asynchronous static select: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte write; BW1–BW4 each gate one 9-bit byte (I/O0–7+I/OP1, etc.) |
| OE | Output Enable | Asynchronous control: LOW enables flow-through outputs; HIGH forces high-Z regardless of chip select |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces supply current to 35 µA; internal pull-down |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; input registered on CLK rise, output flow-through |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data valid tCD (≤8.5 ns) after CLK rise, critical for zero-wait-state systems |
| Single-cycle deselect capability | Chip deactivation completes within one CLK cycle - enables rapid context switching in multi-SRAM systems |
| Configurable burst addressing | LBO pin statically selects linear or interleaved 4-word burst order, matching CPU/cache controller expectations |
| Multi-level power management | Three distinct low-power states: standby (35 mA), clock-running standby (95 mA), and full sleep (35 µA via ZZ) |
| Byte-selectable write granularity | Four independent 9-bit byte write enables (BW1–BW4) allow partial writes without read-modify-write overhead |
Applications
| Network Packet Buffering | Real-Time DSP Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches with deterministic latency requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame buffer with burst reads aligned to packet boundaries. Use Value: 8.5 ns tCD and flow-through output ensure sub-10 ns read response; 36-bit width matches 4-byte-aligned packet headers. |
Use Scenario: Providing scratchpad memory for TI C6000 or Analog Devices SHARC processors executing FFT-intensive radar algorithms. IC Role / Device Role / Timing Role: Synchronous cache SRAM interfaced directly to processor EMIF with burst-mode address generation. Use Value: Linear burst mode (LBO = LOW) delivers sequential 36-bit words matching FFT coefficient access patterns; industrial temp rating ensures field reliability. |
| Industrial PLC I/O Mapping Memory | Avionics Display Framestore |
Use Scenario: Holding real-time I/O status maps and control setpoints in ruggedized programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Non-volatile-configured SRAM used as deterministic-access configuration and state storage memory. Use Value: –40°C to +85°C rating guarantees operation in uncontrolled enclosures; ZZ sleep mode reduces thermal load during idle scan cycles. |
Use Scenario: Buffering rendered video frames for HUD (Head-Up Display) systems requiring glitch-free overlay rendering. IC Role / Device Role / Timing Role: Dual-port-equivalent SRAM serving as framestore with separate read/write clock domains via ADV-controlled burst sequencing. Use Value: Interleaved burst mode (LBO = HIGH) aligns with GPU texture fetch patterns; TQFP-100 allows conformal coating for vibration resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV12836B | 128K × 36-bit, 8 ns access, 3.3V, TQFP-100, but lacks ADV/LBO burst control and uses simpler CE/OE-only interface | No burst counter or configurable burst order - requires external logic for multi-word reads | Select when burst functionality is unnecessary and lowest-cost commodity SRAM suffices |
| Cypress CY7C1355BV | 128K × 36-bit, 7.5 ns access, 3.3V, TQFP-100, includes burst counter and LBO, but only rated commercial (0°C to +70°C) | Cannot replace 71V3577S85BQI8 in industrial-temperature deployments without derating or thermal margin analysis | Choose for cost-sensitive commercial systems where 85°C operation is not required |
Compared with IS61WV12836B and CY7C1355BV, the 71V3577S85BQI8 uniquely combines industrial temperature support, flow-through latency, and hardware-configurable burst sequencing - making it irreplaceable in deterministic real-time buffers where timing predictability and environmental robustness are co-constrained.
Availability
71V3577S85BQI8 is available at Aetrix Electronics and suitable for network packet buffering, real-time DSP caching, industrial PLC I/O mapping, and avionics display framestores requiring stable component supply across extended product lifecycles.
Supply support for 71V3577S85BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking, test equipment, and real-time control applications.
FAQ
What is the maximum clock frequency supported by the 71V3577S85BQI8 in industrial temperature range?
The 71V3577S85BQI8 supports up to 87 MHz clock frequency in the industrial temperature range (–40°C to +85°C), corresponding to its 8.5 ns access time specification. This is validated per AC Electrical Characteristics Table 16 in the official Renesas datasheet revision 6.42, with tCYC = 11.5 ns minimum.
Does the 71V3577S85BQI8 support both linear and interleaved burst modes, and how is the mode selected?
Yes, the 71V3577S85BQI8 supports both linear and interleaved burst modes. The LBO (Linear Burst Order) pin selects the mode: LBO = LOW configures linear burst (00→01→10→11), while LBO = HIGH selects interleaved burst (00→01→11→10). LBO is asynchronous and must remain static during operation.
What is the function of the ADV pin on the 71V3577S85BQI8, and when is it sampled?
The ADV (Burst Address Advance) pin is an active-low synchronous input that increments the internal burst address counter on the rising edge of CLK. It is sampled only when ADSP or ADSC is asserted low and CE is active, enabling precise control over burst progression in cache or DMA-driven systems.
How does the 71V3577S85BQI8 achieve flow-through output behavior, and what is its timing impact?
The 71V3577S85BQI8 achieves flow-through output by omitting an output register - data from the memory array propagates directly to I/O pins after tCD (≤8.5 ns) from CLK rise. This eliminates one clock-cycle latency versus pipelined SRAMs, enabling true zero-wait-state read interfaces in high-speed controllers.
What power-saving states are available on the 71V3577S85BQI8, and how is deep sleep entered?
The 71V3577S85BQI8 offers three power states: active (190 mA), standby (35 mA), and full sleep (35 µA). Deep sleep is entered by driving the ZZ pin HIGH asynchronously; this gates the internal clock and retains data while minimizing current draw - confirmed in DC Electrical Characteristics Table 09a.
71V3577S85BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S85BQI8 FAQ
1.How can I place an order for 71V3577S85BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BQI8 reliable?
The price and inventory of 71V3577S85BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BQI8 is usually 5 days.
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71V3577S85BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BQI8?
For technical support, including 71V3577S85BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BQI8 requirements.
6.How does Aetrix verify that 71V3577S85BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BQI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BQI8?
All 71V3577S85BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BQI8 part is unused and in its original packaging.
Return procedure for 71V3577S85BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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