Renesas 71V3577S85PFG8

Overview

71V3577S85PFG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in network packet processors and telecom line cards.

For engineers reviewing the 71V3577S85PFG8 datasheet, 71V3577S85PFG8 pinout, 71V3577S85PFG8 application, or 71V3577S85PFG8 equivalent, key selection criteria include burst mode configuration (LBO), synchronous write control (GW/BWE/BWx), flow-through output timing (tCD = 8.5 ns), and industrial-grade power-down behavior (IZZ = 30–35 µA).

Technical Context

The 71V3577S85PFG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and supports both linear and interleaved sequences selected by the static LBO pin.

Write operations are fully self-timed and configurable via global (GW) or byte-level (BW1–BW4) enables, with BWE gating all byte writes. Chip enable is hierarchical (CE/CS0/CS1), and asynchronous controls include OE (output enable) and ZZ (sleep mode), where ZZ HIGH disables CLK internally and reduces supply current to ≤35 µA.

Key Specifications

Pinout & Package

71V3577S85PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked via corner cutout; pin 14 accepts VIL-level input (not required to tie to VSS); pin 64 (ZZ) may be left unconnected for permanent active mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3577S85PFG8, the 71V3577S85PF offers identical electrical and timing behavior but violates modern RoHS requirements, while CY7C1371DV33-85BGXI trades package compatibility and burst configurability for higher-density interconnect - neither is pin-compatible nor drop-in.

Availability

71V3577S85PFG8 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, and radar signal processors requiring stable component supply, long-term industrial temperature support, and RoHS-compliant manufacturing.

Supply support for 71V3577S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V3577S family targets high-performance embedded systems needing deterministic, low-latency memory with flexible burst control and industrial reliability - especially in communications and signal processing equipment.

FAQ

What is the maximum operating frequency supported by the 71V3577S85PFG8?

The 71V3577S85PFG8 supports up to 87 MHz clock frequency at 8.5 ns access time, validated across the industrial temperature range (–40°C to +85°C). This speed grade is available in both TQFP and BGA packages, unlike the faster 6.5 ns variant which is TQFP-only and commercial-temp only.

Does the 71V3577S85PFG8 support both 128K × 36 and 256K × 18 configurations on the same device?

Yes, the 71V3577S85PFG8 is factory-configured as 128K × 36, but its pinout and internal architecture natively support 256K × 18 operation via A17 address usage and appropriate BWx mapping. The 71V3579S variant is the dedicated 256K × 18 version; both share identical timing and control logic.

How does the LBO pin affect burst behavior in the 71V3577S85PFG8?

The LBO pin statically selects burst order: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). It must remain stable during operation; changing LBO mid-burst causes undefined address sequencing. Internal pull-up ensures default interleaved mode if left unconnected.

What is the power consumption of the 71V3577S85PFG8 in sleep mode?

In full sleep mode (ZZ = HIGH), the 71V3577S85PFG8 draws ≤35 µA at VDD = 3.465 V and TA = +85°C, with guaranteed data retention. This is measured under worst-case conditions; typical IZZ is ~30 µA at nominal VDD = 3.3 V and 25°C.

Can the 71V3577S85PFG8 be used with asynchronous controllers?

No - the 71V3577S85PFG8 is strictly synchronous: all address, control, and data inputs are sampled on the rising edge of CLK. Asynchronous signals like OE and ZZ operate independently of CLK, but core memory access (read/write) requires clock synchronization. External handshaking logic is required for true asynchronous interfacing.