Renesas 71V3577YS85PFG

Overview

IDT71V3577YS85PFG from Integrated Device Technology is a 128K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.5ns access time at up to 87MHz clock frequency, linear/interleaved burst mode selection via LBO pin, and JEDEC-standard 100-pin TQFP package. It serves as high-speed buffer memory in network packet processors requiring deterministic latency and burst data throughput.

For engineers reviewing the IDT71V3577YS85PFG datasheet, IDT71V3577YS85PFG pinout, IDT71V3577YS85PFG application, or IDT71V3577YS85PFG equivalent, key selection criteria include synchronous burst timing compliance, 3.3V I/O voltage tolerance, flow-through (non-registered) output path, single-cycle deselect capability, and industrial temperature support (–40°C to +85°C).

Technical Context

This SRAM implements a synchronous interface with clock-triggered address latching via ADSP/ADSC inputs, internal burst address counter controlled by ADV and LBO, and self-timed write cycles enabled by GW, BWE, and BW1–BW4 byte-select logic. The flow-through output path eliminates output register delay, enabling immediate data availability on CLK rising edge after tCD.

It supports dual chip-select architecture (CS0 active-high, CS1 active-low), asynchronous OE and ZZ controls, boundary-scan JTAG (IEEE 1149.1) in SA variants, and power-down modes including CMOS standby (ISB1) and full sleep (IZZ). The device uses IDT's high-performance CMOS process and requires no power supply sequencing.

Key Specifications

Pinout & Package

Package: 100-pin plastic thin quad flatpack (TQFP), JEDEC MS-026AC, 14 mm × 20 mm body, 0.5 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1375D-85BAXI and IS61WV12836-85BLI, IDT71V3577YS85PFG uniquely combines flow-through output timing, hardware-selectable burst order (LBO), and integrated JTAG-making it optimal for latency-constrained, testable, and configurable embedded memory subsystems.

Availability

IDT71V3577YS85PFG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for IDT71V3577YS85PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

IDT71V3577YS85PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency, burst-capable memory subsystems in telecom infrastructure, military/aerospace avionics, and industrial control systems.

FAQ

What is the maximum clock frequency supported by IDT71V3577YS85PFG at industrial temperature?

IDT71V3577YS85PFG supports up to 87 MHz at –40°C to +85°C (industrial grade), corresponding to an 8.5 ns clock cycle time. This is guaranteed under VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%, and specified AC timing conditions per datasheet Table 16. The device maintains full functionality-including burst mode, self-timed writes, and flow-through outputs-at this frequency across the full temperature range.

Does IDT71V3577YS85PFG support both linear and interleaved burst sequences?

Yes, IDT71V3577YS85PFG supports both linear and interleaved 4-word burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is asynchronous and static-its state must not change during active burst operation, as confirmed in datasheet Tables 14 and 15.

How does the flow-through output architecture of IDT71V3577YS85PFG differ from pipelined SRAMs?

IDT71V3577YS85PFG uses a flow-through (non-registered) output path: data appears on I/O pins within tCD (≤8.5 ns) after the rising CLK edge that latched the address-no additional clock cycle delay. In contrast, pipelined SRAMs insert an output register, adding ≥1 CLK cycle of latency. This makes IDT71V3577YS85PFG ideal for applications demanding zero-cycle-output-read timing, such as real-time packet forwarding engines.

What power-saving modes are available on IDT71V3577YS85PFG, and how are they controlled?

IDT71V3577YS85PFG offers three power-saving states: CMOS standby (ISB1 ≤ 35 mA) activated by deselection (CE/CS deasserted), clock-running standby (ISB2 ≤ 90 mA) with deselected chip but active CLK, and full sleep mode (IZZ ≤ 35 mA) triggered by asserting ZZ HIGH. ZZ is asynchronous and internally pulled down; no external pull-down resistor is required. All modes retain data without refresh.

Is JTAG boundary scan supported on IDT71V3577YS85PFG, and what are the pin requirements?

IDT71V3577YS85PFG does not include JTAG boundary scan; that feature is exclusive to the "SA" suffix variants (e.g., IDT71V3577YSA). The "S" suffix (as in IDT71V3577YS85PFG) has TMS/TDI/TCK/TDO/TRST pins marked NC (no connect) in the 100-pin TQFP package. For JTAG-enabled designs, the SA variant must be selected-confirming pin compatibility is insufficient without functional verification of the specific suffix.