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Renesas 71V3578S133PFG
- Part No.:
- 71V3578S133PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3578S133PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:201
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Product details
Overview
71V3578S133PFG from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW2), and sleep mode (ZZ). Used in high-speed cache and memory subsystems for networking processors and DSP-based systems.
For engineers reviewing the 71V3578S133PFG datasheet, 71V3578S133PFG pinout, 71V3578S133PFG application, or 71V3578S133PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial-grade temperature support (–40°C to +85°C), and pipelined read/write cycle integrity under synchronous control.
Technical Context
The 71V3578S133PFG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and generates four consecutive 18-bit words per address, with sequence order determined by LBO state (linear or interleaved).
It uses dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O), supports self-timed writes via GW/BWE/BWx logic, and enters low-power sleep mode when ZZ is asserted HIGH - retaining data while reducing supply current to ≤35mA (industrial grade).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit), configured as 18-bit wide data bus with 18 address bits (A0–A17) |
| Clock Frequency | 133 MHz - enables 7.5 ns minimum clock cycle time for deterministic timing in high-throughput memory interfaces |
| Access Time | 4.2 ns clock-to-data (tCD) - guarantees pipelined output validity on the next rising clock edge after address latch |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - separate core/I/O rails allow noise isolation and signal integrity optimization |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments |
| Power Consumption | ISB2 = 100 mA (133 MHz, deselected), IZZ = 30–35 mA (sleep mode) - enables thermal management in dense PCB layouts |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence - critical for cache line alignment with MIPS/ARM processor buses |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; pins arranged in four 25-pin sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion - defines 256K-word address space |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) are edge-triggered on rising CLK |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP/ADSC load initial address - supports processor/cache controller handshaking |
| LBO, ZZ | Mode Configuration | LBO selects burst order (LOW = linear); ZZ asserts sleep mode (HIGH = clock gated, IZZ ≤35 mA) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus with parity pins I/OP1/I/OP2 - registered input/output paths ensure setup/hold compliance |
| CE, CS0, CS1 | Chip Enable/Select | Three-level decode (CE LOW + CS0 HIGH + CS1 LOW) enables device - supports multi-chip memory banking |
| OE | Output Enable | Asynchronous control of output drivers - allows dynamic bus sharing without clock dependency |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Read | Delivers four consecutive 18-bit words per address with 1-cycle pipeline latency - eliminates wait states in burst-oriented processors |
| Single-Cycle Deselect | Device transitions to standby within one clock cycle after chip disable - reduces bus turnaround overhead in multi-SRAM systems |
| Byte-Write Granularity | BW1/BW2 enable independent 9-bit writes to upper/lower data bytes - preserves data integrity during partial-word updates |
| Low-Power Sleep Mode | ZZ HIGH reduces ICC to ≤35 mA while retaining full memory content - essential for power-gated subsystems |
| Industrial Temperature Support | Validated operation from –40°C to +85°C - qualified for base station RF modules and motor drive controllers |
Applications
| Networking Packet Buffer | DSP Data Cache |
|---|---|
Use Scenario: Stores incoming/outgoing Ethernet frames in Layer 2/3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with MAC-layer controllers via synchronous burst reads/writes. Use Value: 133MHz operation and pipelined outputs sustain ≥2.4 Gbps aggregate throughput across 18-bit bus, minimizing packet loss under line-rate traffic. | Use Scenario: Serves as on-chip L1/L2 cache extension for TI C6000 or Analog Devices SHARC DSPs executing real-time FIR filtering. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to coefficient and sample buffers synchronized to DSP clock domain. Use Value: Single-cycle deselect and burst counter enable seamless context switching between filter banks without pipeline stalls. |
| Industrial PLC Memory Module | Radar Signal Processing Buffer |
Use Scenario: Holds ladder logic state tables and I/O image data in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Non-volatile-retentive memory buffer operating continuously across extended industrial temperature range. Use Value: Industrial-grade qualification (–40°C to +85°C) and ZZ sleep mode support unattended 24/7 operation with <100 mW active power dissipation. | Use Scenario: Buffers ADC samples from phased-array radar receivers prior to FFT computation in FPGA-based beamforming engines. IC Role / Device Role / Timing Role: High-reliability burst-access memory aligned to radar pulse repetition intervals and FFT frame boundaries. Use Value: Linear burst mode (LBO=LOW) ensures sequential sample delivery matching FFT input stride, eliminating software address calculation overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-133BZI | 144-ball BGA, 256K × 18, same 133MHz speed but no LBO pin; uses fixed interleaved burst only | Requires PCB redesign due to BGA package; lacks linear burst option for FFT-aligned access patterns | Select when board space is constrained and burst order is fixed; verify ADV timing compatibility |
| AS7C3256B-13JIN | SOJ-44 package, 256K × 16 organization, asynchronous interface, no pipelining or burst counter | Lower performance (no burst, no pipeline), incompatible control protocol (asynchronous OE/CE), 16-bit bus width | Use only for cost-sensitive legacy designs where timing margin and bandwidth are non-critical |
Compared with CY7C1315KV18-133BZI and AS7C3256B-13JIN, the 71V3578S133PFG uniquely delivers 100-pin TQFP compatibility, selectable linear/interleaved burst, and pipelined outputs - making it optimal for new designs requiring deterministic high-speed memory access with minimal layout change.
Availability
71V3578S133PFG is available at Aetrix Electronics and suitable for networking packet buffers, DSP data caches, industrial PLC memory modules, and radar signal processing buffers requiring stable component supply and long-term industrial temperature support.
Supply support for 71V3578S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V3578S133PFG belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-throughput memory subsystems in network processors, digital signal processors, and industrial controllers.
FAQ
What is the memory organization and data bus width of the 71V3578S133PFG?
The 71V3578S133PFG is organized as 256K × 18 bits, providing an 18-bit data bus with dedicated I/OP1 and I/OP2 parity pins. This configuration supports 4.6 Mbit total capacity and is optimized for systems requiring wider word widths than standard 16-bit SRAMs, such as DSPs with 18-bit instruction/data paths.
Does the 71V3578S133PFG support both linear and interleaved burst modes?
Yes, the 71V3578S133PFG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (00→01→10→11), and LBO = HIGH selects interleaved (00→01→11→10). This flexibility allows alignment with different processor cache line mapping schemes without firmware changes.
What is the function of the ADV pin on the 71V3578S133PFG?
The ADV (Burst Address Advance) pin controls burst counter progression: when ADV = LOW, the internal counter increments for each subsequent burst word; when ADV = HIGH, the counter freezes, suspending burst mode and enabling single-word access. This allows dynamic switching between burst and non-burst operations mid-sequence.
How does the 71V3578S133PFG enter and exit sleep mode?
The 71V3578S133PFG enters sleep mode when ZZ is driven HIGH, gating the internal clock and reducing ICC to ≤35 mA (industrial grade) while retaining memory content. Exit requires ZZ return to LOW followed by tZZR ≥100 ns recovery time before valid accesses resume - no reset or reinitialization needed.
Is the 71V3578S133PFG pin-compatible with the 71V3576S133PFG?
No - although both use the same 100-pin TQFP package and share most control signals, the 71V3578S133PFG (256K × 18) has A16/A17 as address inputs and omits BW3/BW4, whereas the 71V3576S133PFG (128K × 36) uses A0–A16 and supports all four byte-write enables. PCB layout is not interchangeable.
71V3578S133PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3578S133PFG FAQ
1.How can I place an order for 71V3578S133PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3578S133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3578S133PFG reliable?
The price and inventory of 71V3578S133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S133PFG is usually 5 days.
3.What payment methods are accepted for 71V3578S133PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3578S133PFG transactions.
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4.How is shipping managed for 71V3578S133PFG?
71V3578S133PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3578S133PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3578S133PFG?
For technical support, including 71V3578S133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S133PFG requirements.
6.How does Aetrix verify that 71V3578S133PFG is sourced from the original manufacturer or authorized distributors?
All 71V3578S133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S133PFG meets industry standards.
7.What is the process for return or replacement of 71V3578S133PFG?
All 71V3578S133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S133PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3578S133PFG part is unused and in its original packaging.
Return procedure for 71V3578S133PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3578S133PFG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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