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Renesas 71V3578S133PFG8
- Part No.:
- 71V3578S133PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3578S133PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,023
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Product details
Overview
71V3578S133PFG8 from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW2), and sleep mode via ZZ input. Used in high-speed cache and memory subsystems for network processors and telecom line cards.
For engineers reviewing the 71V3578S133PFG8 datasheet, 71V3578S133PFG8 pinout, 71V3578S133PFG8 application, or 71V3578S133PFG8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial-grade temperature support (–40°C to +85°C), and pipelined read/write cycle coordination with ADSP/ADSC address status signals.
Technical Context
The 71V3578S133PFG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and generates four consecutive 18-bit words per initial address, with sequence order determined by LBO state (linear or interleaved).
Burst writes are self-timed and controlled by GW, BWE, and BW1–BW2; byte write capability is limited to two 9-bit groups (I/O0–I/O8/I/OP1 and I/O9–I/O17/I/OP2) as BW3/BW4 are not applicable per datasheet Note 1. Power management includes asynchronous ZZ-controlled sleep mode with 30–35mA IZZ current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit); supports 18-bit data bus width without external multiplexing |
| Clock Frequency | 133 MHz; enables 7.5 ns minimum clock cycle time for deterministic timing in high-throughput systems |
| Access Time | 4.2 ns clock-to-data (tCD); guarantees pipelined output validity within one clock cycle after CLK high |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupling must separate core and I/O rails |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range for telecom and industrial control applications |
| Power Dissipation | 250 mA IDD (133 MHz, commercial), 260 mA IDD (133 MHz, industrial); defines thermal budget for PCB layout |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes device code and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 fully decode 256K × 18 space |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) triggered on rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy: CE active-low, CS0 active-high, CS1 active-low; enables multi-chip memory expansion |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously |
| LBO | Burst Order Select | Asynchronous static input: LBO=LOW → linear burst; LBO=HIGH → interleaved burst; must remain stable during operation |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; gates internal CLK and reduces supply current to ≤35 mA (industrial) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O Pins | 18-bit bidirectional data bus + 2 parity bits; registered input/output paths synchronized to CLK rising edge |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS (common ground) require dedicated decoupling; no power sequencing required |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Four consecutive 18-bit words delivered on four successive CLK rising edges after first address; eliminates wait states in burst-oriented processors |
| Single-Cycle Deselect | Device transitions to high-impedance or standby state within one clock cycle upon chip disable; prevents bus contention in multi-SRAM systems |
| Self-Timed Write Cycle | Internal timing logic completes write without external strobe extension; simplifies controller design and improves reliability under varying load conditions |
| Byte-Write Capability | Two independent 9-bit byte groups (BW1/BW2) allow partial-word updates without read-modify-write overhead; critical for protocol header manipulation |
| Asynchronous Sleep Mode (ZZ) | Reduces active current to ≤35 mA while retaining data; enables rapid wake-up (<100 ns tZZR) for low-power duty-cycled applications |
Applications
| Network Processor Cache | Telecom Line Card Buffer |
|---|---|
|
Use Scenario: High-bandwidth packet buffering and header processing in OC-48/STM-16 line cards requiring deterministic latency. IC Role / Device Role / Timing Role: Primary burst-access SRAM interfacing directly with network processor's 18-bit data bus and ADSP/ADSC handshake signals. Use Value: 133MHz pipelined reads deliver 4×18-bit bursts in 30 ns, matching processor pipeline depth and eliminating stall cycles. |
Use Scenario: Real-time ATM cell assembly/disassembly in carrier-grade DSLAMs operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-temperature 256K×18 buffer supporting burst writes via GW/BWE and linear burst reads for cell payload streaming. Use Value: Full industrial temp validation and ZZ sleep mode enable reliable operation in uncontrolled outdoor cabinets with thermal cycling. |
| Baseband Signal Processing | Radar Data Acquisition |
|
Use Scenario: Intermediate storage for FFT coefficients and filter taps in LTE eNodeB baseband units with tight timing budgets. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-jitter, clock-aligned data access to FPGA-based DSP engines using ADV/ADSP control. Use Value: 4.2ns tCD and single-cycle deselect ensure precise alignment with FPGA clock domains and prevent metastability in multi-clock systems. |
Use Scenario: High-speed digitized radar return buffering in airborne phased-array systems where EMI resilience and thermal stability are critical. IC Role / Device Role / Timing Role: Radiation-tolerant (by process) 100-pin TQFP SRAM used for real-time ADC sample capture with pipelined burst reads to DSP. Use Value: 100-pin TQFP package provides mechanical robustness and consistent signal integrity vs. BGA alternatives in high-vibration environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-133BZI | 256K × 18, 133MHz, 3.3V, 100-pin TQFP; supports JTAG boundary scan but lacks ADSC/ADSP dual-address-status interface | Requires redesign of address-handshake logic; suitable for FPGA-centric systems without cache coherency requirements | Select when IEEE 1149.1 testability is mandatory and ADSP/ADSC signaling is unused |
| AS7C3256B-13JIN | 256K × 18, 133MHz, 3.3V, 100-pin TQFP; no burst counter or pipelined outputs - only asynchronous read/write | Cannot support burst-mode processors without external glue logic; adds 2–3 clock latency per access | Select only for legacy controller designs lacking burst capability or where lowest cost outweighs performance loss |
Compared with CY7C1362BV18-133BZI and AS7C3256B-13JIN, the 71V3578S133PFG8 delivers deterministic burst timing via integrated ADSP/ADSC handshaking and pipelined outputs - reducing system-level latency by up to 40% in cache-coherent architectures.
Availability
71V3578S133PFG8 is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, and baseband signal processing applications requiring stable component supply, long-term industrial temperature support, and JEDEC-standard TQFP packaging.
Supply support for 71V3578S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V3578S133PFG8 belongs to IDT's 71V357x family of pipelined burst SRAMs, designed specifically for low-latency, high-throughput memory subsystems in network infrastructure and real-time signal processing equipment.
FAQ
What is the memory organization and data bus width of the 71V3578S133PFG8?
The 71V3578S133PFG8 is organized as 256K × 18 bits (4.6 Mbit total), providing an 18-bit parallel data bus with two dedicated parity bits (I/OP1 and I/OP2). This configuration matches common network processor and DSP data widths, eliminating the need for external data multiplexing or splitting logic in 16–32-bit systems.
Does the 71V3578S133PFG8 support both linear and interleaved burst modes?
Yes, the 71V3578S133PFG8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO=LOW selects linear addressing (00→01→10→11), while LBO=HIGH selects interleaved (00→01→11→10). The datasheet confirms this behavior applies to the 71V3578 variant and is implemented in hardware with no software configuration required.
What are the valid voltage ranges for VDD and VDDQ on the 71V3578S133PFG8?
The 71V3578S133PFG8 requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% (3.135 V to 3.465 V) for I/O drivers. These are independent supplies; the datasheet explicitly states no power sequencing is required, but separate decoupling capacitors per supply rail are mandatory for signal integrity.
How does the ZZ pin function in the 71V3578S133PFG8, and what is its recovery time?
The ZZ pin on the 71V3578S133PFG8 is an asynchronous input that places the device into full sleep mode when driven HIGH, reducing supply current to ≤35 mA (industrial grade). Recovery time (tZZR) is guaranteed at 100 ns maximum - the device resumes normal operation on the next rising CLK edge after ZZ returns LOW.
Are BW3 and BW4 functional on the 71V3578S133PFG8?
No, BW3 and BW4 are not applicable to the 71V3578S133PFG8. The datasheet explicitly states in Note 1 of the Pin Description Summary and Pin Definitions tables that these pins are reserved and unused for the 71V3578 family. Only BW1 and BW2 are active, controlling the lower and upper 9-bit byte groups respectively.
71V3578S133PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3578S133PFG8 FAQ
1.How can I place an order for 71V3578S133PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3578S133PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V3578S133PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S133PFG8 is usually 5 days.
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5.How can I obtain technical support or documentation for 71V3578S133PFG8?
For technical support, including 71V3578S133PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S133PFG8 requirements.
6.How does Aetrix verify that 71V3578S133PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3578S133PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S133PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3578S133PFG8?
All 71V3578S133PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S133PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3578S133PFG8 part is unused and in its original packaging.
Return procedure for 71V3578S133PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3578S133PFG8 Tags
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