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Renesas 71V3578S133PFGI

Part No.:
71V3578S133PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3578S133PFGI.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,117

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Product details

Overview

71V3578S133PFGI from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO pin, and features global write (GW), byte write enables (BW1–BW2), and sleep mode (ZZ). Used in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V3578S133PFGI datasheet, 71V3578S133PFGI pinout, 71V3578S133PFGI application, or 71V3578S133PFGI equivalent, key selection criteria include burst timing compliance, industrial temperature support (−40°C to +85°C), TQFP-100 package compatibility, and 3.3V I/O voltage tolerance with pipelined read latency.

Technical Context

The 71V3578S133PFGI implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and generates four consecutive addresses per initial access, with sequence order determined by LBO state (linear or interleaved).

Burst writes are supported via GW (global) or BW1/BW2 (byte-selectable), while self-timed write cycles use BWE gating. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 35mA) and synchronous standby (ISB1 ≤ 35mA), both preserving data retention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 18-bit (4.6 Mbit); matches 18-bit data bus width for DSP and telecom interface alignment
Clock Frequency133 MHz; enables 7.5 ns minimum clock cycle for deterministic timing in pipeline-critical systems
Access Time4.2 ns clock-to-data (tCD); defines pipelined output latency for first burst word at 133 MHz
Supply VoltagesVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; decoupled core/I/O rails reduce noise coupling in mixed-signal designs
Operating Temperature−40°C to +85°C industrial grade; validated for extended thermal cycling in base station and industrial controller environments
Power DissipationIDDA = 260 mA max at 133 MHz (industrial); translates to ~0.86 W typical active power under full load
Burst Mode ControlLBO pin selects linear or interleaved address sequence; static configuration avoids runtime reconfiguration overhead

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 identifier corner marked per standard orientation.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous 18-bit address bus; A0–A16 used for 256K × 18 addressing (218 = 262,144 words)
CLKClock InputSingle-ended system clock reference; all registers triggered on rising edge with setup/hold timing referenced to CLK
GW, BWE, BW1, BW2Write Control InputsGW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2
ADV, ADSP, ADSCBurst & Address StatusADV advances internal burst counter; ADSP/ADSC latch address on falling edge (active LOW) - processor/cache compatible
LBO, ZZMode ConfigurationLBO (asynchronous) selects burst order; ZZ (asynchronous HIGH) disables CLK internally and reduces current to ≤35 mA
I/O0–I/O17, I/OP1–I/OP2Data I/O18-bit bidirectional data bus + 2 parity bits; registered input/output paths ensure timing closure in high-speed PCB layouts
VDD, VDDQ, VSSPower/GroundDual 3.3 V supplies: VDD (core), VDDQ (I/O); separate pins enable localized decoupling and noise isolation

Key Features

FeatureDesign Value
Pipelined Burst OutputsFirst data word available after one clock cycle; subsequent burst words delivered on next three rising edges - eliminates wait states in sequential memory access
Single-Cycle DeselectChip deactivation completes within one CLK period; enables rapid context switching between multiple SRAM banks without timing penalty
Self-Timed Write CycleInternal write timing derived from control inputs (GW/BWE/BWx); removes need for external write pulse generation or timing margining
Industrial Temperature SupportFull functionality guaranteed from −40°C to +85°C; qualified per JEDEC JESD22-A104 and A119 for thermal shock and cycling
Green PackagingLead-free, RoHS-compliant TQFP (Pb-free solder compatible); meets IPC/JEDEC J-STD-020 moisture sensitivity level 3

Applications

Network Packet BufferDSP Data Cache

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding or classification.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controller and switch fabric; pipelined reads align with 133 MHz PHY clock domain.

Use Value: 4.2 ns tCD and burst capability sustain >1 Gbps sustained throughput without backpressure, reducing frame loss during traffic bursts.

Use Scenario: Serving as on-chip or near-core scratchpad memory for TI C6000 or Analog Devices SHARC processors executing real-time FIR filtering.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as zero-wait-state data memory; LBO-configured linear burst matches coefficient/data streaming patterns.

Use Value: Single-cycle deselect and pipelined outputs eliminate pipeline stalls during looped memory accesses, improving MAC/cycle efficiency by ≥12% vs. non-burst alternatives.

Industrial PLC I/O ModuleBaseband Signal Processor

Use Scenario: Holding real-time sensor input and actuator output tables in programmable logic controllers deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: Industrial-grade memory storing cyclic process data; ZZ sleep mode reduces power during idle scan cycles without data loss.

Use Value: −40°C to +85°C operation ensures reliability inside uncooled enclosures; ISB1 ≤ 35 mA in standby extends system uptime during brownout conditions.

Use Scenario: Buffering IQ samples between ADC/DAC and FPGA-based channelizers in 4G/LTE small cell radio units.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/CS partitioning) supporting simultaneous capture and processing; ADV-controlled burst matches FFT block sizes.

Use Value: 133 MHz clock rate supports 122.88 MSPS sampling with 16-sample burst alignment; tCHZ ≤ 4.2 ns ensures clean data hold during FPGA read/write handshaking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV18-133BZXI256K × 18, 133 MHz, 3.3 V, TQFP-100; supports QDR-II+ dual-clock interface but lacks ADV/ADSP/ADSC cache-control signalsOptimized for FPGA-to-memory high-throughput links; not pin-compatible with processor/cache bus protocols requiring ADSP/ADSC handshakeSelect only when migrating to QDR-II+ architecture; requires PCB redesign and firmware changes for burst control logic
AS7C3256A-133JCIN256K × 18, 133 MHz, 3.3 V, TQFP-100; no burst counter, no ADV/ADSP/ADSC, simpler control (CE/OE/WE only)Targeted at general-purpose microcontroller interfaces; lacks cache-aware timing features and pipelined output stagingUse where burst mode is unnecessary and cost is primary; verify tOE = 4.2 ns meets system timing budget without pipelining benefit

Compared with CY7C1315KV18-133BZXI and AS7C3256A-133JCIN, the 71V3578S133PFGI uniquely delivers cache-controller-compatible burst sequencing (ADSP/ADSC/ADV), pipelined output staging, and industrial-grade thermal performance in a drop-in TQFP-100 footprint - critical for legacy telecom and industrial control upgrades.

Availability

71V3578S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, industrial PLC I/O modules, and baseband signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3578S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 71V3578S133PFGI belongs to IDT's pipelined burst synchronous SRAM product line, engineered specifically for cache-coherent systems requiring low-latency, burst-aligned memory access with industrial temperature resilience and robust power management.

FAQ

What memory organization does the 71V3578S133PFGI implement?

The 71V3578S133PFGI implements a 256K × 18-bit organization (4.6 Mbit total), configured exclusively for 256K-word depth with 18-bit data width. This differs from the pin-compatible 71V3576S133PFGI (128K × 36), and the device uses address pins A0–A17 to decode the full 256K space. No reconfiguration to alternate widths is supported.

Does the 71V3578S133PFGI support both linear and interleaved burst modes?

Yes, the 71V3578S133PFGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing applies. The LBO pin is asynchronous and must remain static during burst operation - changing it mid-burst may cause undefined address sequencing.

What is the function of the ADV pin on the 71V3578S133PFGI?

The ADV (Burst Address Advance) pin on the 71V3578S133PFGI is a synchronous input that controls progression of the internal burst counter. When ADV = LOW on the rising edge of CLK, the counter advances to the next burst address. When ADV = HIGH, burst advancement halts - enabling suspended burst operation for partial transfers or interleaved access patterns.

How does the 71V3578S133PFGI handle power-down and sleep modes?

The 71V3578S133PFGI supports two low-power states: synchronous standby (ISB1 ≤ 35 mA) activated by chip deselect, and asynchronous sleep mode (IZZ ≤ 35 mA) triggered by ZZ = HIGH. In sleep mode, the internal clock is gated, but data retention is guaranteed across the full −40°C to +85°C range without external refresh.

Is the 71V3578S133PFGI pin-compatible with the 71V3576S133PFGI?

No, the 71V3578S133PFGI is not pin-compatible with the 71V3576S133PFGI despite sharing the same TQFP-100 package. Key differences include BW3/BW4 omission (not applicable per datasheet note), distinct address pin usage (A0–A17 vs. A0–A16 for 128K×36), and different I/O pin assignments (e.g., I/OP3/I/OP4 present on 71V3576 but NC on 71V3578). PCB layout must be verified per respective pin configurations.

71V3578S133PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3578S133PFGI FAQ

1.How can I place an order for 71V3578S133PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3578S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3578S133PFGI reliable?

The price and inventory of 71V3578S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S133PFGI is usually 5 days.

3.What payment methods are accepted for 71V3578S133PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3578S133PFGI transactions.

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71V3578S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3578S133PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3578S133PFGI?

For technical support, including 71V3578S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S133PFGI requirements.

6.How does Aetrix verify that 71V3578S133PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3578S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S133PFGI meets industry standards.

7.What is the process for return or replacement of 71V3578S133PFGI?

All 71V3578S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S133PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3578S133PFGI part is unused and in its original packaging.

Return procedure for 71V3578S133PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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