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Renesas 71V3578S133PFGI8
- Part No.:
- 71V3578S133PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3578S133PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,025
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Product details
Overview
71V3578S133PFGI8 from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global and byte-level write control. Used in high-speed cache and buffer applications in networking and telecom line cards.
For engineers reviewing the 71V3578S133PFGI8 datasheet, 71V3578S133PFGI8 pinout, 71V3578S133PFGI8 application, or 71V3578S133PFGI8 equivalent, key selection criteria include burst mode timing compliance, industrial temperature support (–40°C to +85°C), TQFP-100 package compatibility, and 3.3V I/O voltage tolerance with pipelined output staging.
Technical Context
The 71V3578S133PFGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst address counter advances on ADV=LOW and selects sequence order via LBO (linear or interleaved), enabling four-word burst reads/writes per address cycle.
Burst operation is pipelined: first output appears one clock cycle after address latch, with subsequent outputs aligned to rising CLK edges. Write cycles are self-timed and support global (GW) or individual byte (BW1–BW2) enable - BW3/BW4 are not applicable per datasheet Note 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit), configured as 18-bit wide data bus |
| Clock Frequency | 133 MHz - enables 7.5 ns minimum clock cycle for deterministic timing in high-throughput systems |
| Access Time | 4.2 ns clock-to-data (tCD) - defines maximum latency for first valid output in pipelined read |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3V rails with independent decoupling |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Power Dissipation | 260 mA IDD (max) at 133 MHz - translates to ~858 mW typical active power at 3.3V |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - surface-mount compatible with standard reflow profiles |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch. Pin 1 marked by corner notch; top view shown in datasheet Figure 2 (71V3578 PKG100).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on ADSP/ADSC edge; A0–A17 used fully for 256K×18 addressing (18-bit address space) |
| CLK | System Clock Input | Single-ended CMOS clock; all registers triggered on rising edge; no internal PLL or frequency multiplication |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1; BW2 controls I/O9–I/O17/I/OP2 - BW3/BW4 not connected |
| ADV, ADSP, ADSC | Burst & Address Strobe | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously - functionally interchangeable for read |
| LBO, ZZ | Mode Configuration | LBO selects linear (LOW) or interleaved (HIGH) burst order; ZZ enables low-power sleep mode (asynchronous, internal pull-down) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; registered input/output paths; high-impedance when OE=HIGH or device deselected |
| CE, CS0, CS1 | Chip Enable Logic | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows bank selection in multi-SRAM systems |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS (common ground) require separate low-ESR decoupling; NC pins (e.g., 14, 64) may be tied to VDD or left floating |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data word available one clock cycle after address latch; remaining three words aligned to next three CLK edges - eliminates wait states in burst transfers |
| Single-Cycle Deselect | Device enters high-Z output state within one clock cycle of chip disable - prevents bus contention during rapid bank switching |
| Self-Timed Write Cycle | Internal timing logic completes write without external strobes; supports GW-only or BW1/BW2-selective writes with no external write pulse generation |
| Industrial Temperature Support | Full 133 MHz operation guaranteed from –40°C to +85°C - validated across voltage and process corners per datasheet Table 9 |
| Low-Power Sleep Mode | IZZ = 30–35 µA max with ZZ=HIGH - reduces standby current by >90% vs. ISB1 (30–35 mA) while retaining data |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: High-speed packet buffering in Ethernet switch ASIC interfaces requiring burst-aligned memory access. IC Role / Device Role / Timing Role: Synchronous SRAM providing 133 MHz burst reads/writes to match ASIC DMA engine timing. Use Value: Pipelined outputs reduce interface latency; single-cycle deselect prevents bus glitches during context switches between traffic flows. | Use Scenario: Real-time frame caching in SONET/SDH line cards where deterministic access timing is critical. IC Role / Device Role / Timing Role: Low-latency, industrial-grade memory buffer interfacing with FPGA-based framer logic. Use Value: 4.2 ns tCD and –40°C to +85°C operation ensure jitter-free frame storage under thermal stress and variable load. |
| Baseband Processor Memory | Radar Signal Processing Buffer |
Use Scenario: Intermediate data storage in 4G/LTE baseband processors handling multi-carrier OFDM symbol processing. IC Role / Device Role / Timing Role: Burst-mode SRAM supporting 18-bit parallel data path for FFT/IFFT result staging. Use Value: Linear/interleaved burst selection (LBO) optimizes memory access pattern alignment with processor burst fetch behavior. | Use Scenario: Pulse-Doppler radar front-end buffering where burst-aligned ADC sample storage must meet strict timing deadlines. IC Role / Device Role / Timing Role: High-reliability SRAM operating in extended temperature environments with minimal power overhead. Use Value: Sleep mode (ZZ) enables power gating between radar chirps; 3.3V I/O simplifies level-shifting with ADC/DAC peripherals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-133BZI | 256K × 18, 133 MHz, 3.3V, 100-pin TQFP - identical organization and speed but Cypress's QDR-II+ architecture uses separate read/write clocks | Requires dual-clock routing; lacks LBO-controlled burst order flexibility; supports higher bandwidth via double-data-rate reads | Select if system demands higher aggregate throughput and can accommodate dual-clock layout complexity |
| AS7C3256A-13JIN | 256K × 18, 133 MHz, 3.3V, 100-pin TQFP - standard sync SRAM with no burst counter or pipelined outputs | No burst mode; asynchronous OE; longer access time (5.5 ns); simpler control but lower peak bandwidth | Select for cost-sensitive designs where burst efficiency is unnecessary and timing margin is tight |
Compared with CY7C1315KV18-133BZI and AS7C3256A-13JIN, the 71V3578S133PFGI8 delivers deterministic burst latency via pipelining and flexible linear/interleaved addressing - critical for real-time signal processing - while maintaining pin-compatible TQFP-100 packaging and industrial temperature support.
Availability
71V3578S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processor memory, and radar signal processing buffer applications requiring stable component supply across extended temperature ranges.
Supply support for 71V3578S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions, now part of Renesas Electronics.
The 71V3578S133PFGI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for burst-intensive, low-latency applications in communications infrastructure and industrial computing where deterministic timing and industrial reliability are mandatory.
FAQ
What is the memory organization and data bus width of the 71V3578S133PFGI8?
The 71V3578S133PFGI8 is organized as 256K × 18 bits, providing an 18-bit data bus width (I/O0–I/O17 plus I/OP1–I/OP2 for parity). This configuration supports 4.6 Mbit total capacity and is optimized for systems requiring wide, burst-aligned data transfers without external data multiplexing.
Does the 71V3578S133PFGI8 support both linear and interleaved burst modes?
Yes, the 71V3578S133PFGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. The datasheet explicitly confirms this behavior for the 71V3578 family in Tables 14 and 15.
What are the valid write control options for the 71V3578S133PFGI8?
The 71V3578S133PFGI8 supports global write (GW) and byte write (BW1, BW2) operations. Per datasheet Note 1, BW3 and BW4 are not applicable for the 71V3578 variant. BWE must be LOW to enable BW1/BW2; otherwise, only GW is active. All write operations are synchronous to CLK.
Is the 71V3578S133PFGI8 qualified for industrial temperature operation?
Yes, the "I" suffix in 71V3578S133PFGI8 denotes industrial temperature grade (–40°C to +85°C), and the datasheet confirms full 133 MHz functionality across this range in Tables 4 and 9, including IDD, ISB1, and IZZ specifications.
What package type and pin count does the 71V3578S133PFGI8 use?
The 71V3578S133PFGI8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm body dimensions. Pin configuration is documented in datasheet Figure 3 for the 256K×18 variant.
71V3578S133PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3578S133PFGI8 FAQ
1.How can I place an order for 71V3578S133PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3578S133PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3578S133PFGI8 reliable?
The price and inventory of 71V3578S133PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S133PFGI8 is usually 5 days.
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Once your 71V3578S133PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3578S133PFGI8?
For technical support, including 71V3578S133PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S133PFGI8 requirements.
6.How does Aetrix verify that 71V3578S133PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3578S133PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S133PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3578S133PFGI8?
All 71V3578S133PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S133PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3578S133PFGI8 part is unused and in its original packaging.
Return procedure for 71V3578S133PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3578S133PFGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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