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Renesas 71V3578S150PFG8

Part No.:
71V3578S150PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3578S150PFG8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,629

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Product details

Overview

71V3578S150PFG8 from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150MHz (3.8ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enable (BWE), and sleep mode (ZZ) for low-power operation in high-speed cache and buffer applications.

For engineers reviewing the 71V3578S150PFG8 datasheet, 71V3578S150PFG8 pinout, 71V3578S150PFG8 application, or 71V3578S150PFG8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and synchronous control interface requirements for pipelined memory subsystems.

Technical Context

The 71V3578S150PFG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and generates four consecutive 18-bit words per address, with output pipelining delivering first data one cycle after clock edge.

Burst order is determined by static LBO pin state (LOW = linear, HIGH = interleaved); self-timed writes use GW/BWE/BWx logic with synchronous sampling on CLK rising edge. Power management includes asynchronous ZZ-controlled sleep mode with guaranteed data retention and <35mA ISB1 standby current.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 18-bit (4.6 Mbit total); matches 18-bit data bus width in DSP and network processor interfaces
Clock Frequency150 MHz; enables 6.7 ns clock cycle time for high-throughput buffering in real-time systems
Access Time3.8 ns clock-to-data (tCD); ensures pipelined output meets tight timing budgets in burst-read pipelines
Supply VoltageVDD = VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic I/O domains without level shifting
Operating Temperature–40°C to +85°C (industrial grade); validated for embedded control and telecom infrastructure environments
Power DissipationIDD = 305 mA max at 150 MHz; ISB1 = 35 mA in CMOS standby; supports thermal design in dense PCB layouts
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); enables automated assembly and signal integrity optimization

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not present. Pin 1 identified by dot; top-view orientation per datasheet drawing DRW02.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous address latch triggered by ADSP/ADSC + CE; A0–A17 fully utilized for 256K × 18 addressing
CLKSystem Clock InputSingle-ended clock reference for all synchronous registers; timing-critical path governs max frequency
GW, BWE, BW1–BW2Write Control InputsGW enables full 18-bit write; BWE gates BW1/BW2 (BW3/BW4 not applicable per datasheet note); BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2
ADV, ADSP, ADSCBurst & Address StatusADV advances burst counter; ADSP (processor) and ADSC (cache controller) are synchronous address latches with independent gating
LBO, ZZMode ConfigurationLBO selects linear/interleaved burst sequence (asynchronous static input); ZZ enables hardware sleep mode with internal clock gating
I/O0–I/O17, I/OP1–I/OP2Data I/O18-bit bidirectional data bus + 2 parity bits; registered I/O paths ensure setup/hold compliance at 150 MHz
VDD, VDDQ, VSSPower & GroundDual-supply: VDD (core), VDDQ (I/O); separate pins reduce noise coupling between logic and I/O switching

Key Features

FeatureDesign Value
Pipelined Burst OutputsDelivers first data word one clock cycle after address load, enabling continuous 150 MHz throughput without inter-cycle gaps
Single-Cycle DeselectChip deactivation completes within one CLK cycle, minimizing bus turnaround latency in multi-device systems
Configurable Burst OrderLBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) address sequencing-critical for cache line alignment in CPU interfaces
Self-Timed Write CycleInternal timing logic eliminates external write pulse width constraints; simplifies FPGA/CPLD controller design
Asynchronous Sleep ModeZZ HIGH reduces supply current to ≤35 mA while retaining data; no software initialization required on wake-up

Applications

Network Packet BufferingDSP Data Cache

Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2/3 switches before forwarding or classification.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency FIFO buffer interfaced to MAC controller via 18-bit parallel bus with burst read/write capability.

Use Value: 150 MHz clock rate and pipelined outputs sustain >2.7 Gbps aggregate bandwidth, eliminating packet loss during traffic bursts.

Use Scenario: On-chip cache extension for TI C6000 or Analog Devices SHARC processors executing real-time FFT and filtering algorithms.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as L2 cache with burst access aligned to processor's 4-word fetch pattern.

Use Value: Linear burst mode (LBO=LOW) matches natural address increment of DSP instruction/data streams, reducing average access latency by 30% vs random access.

Industrial PLC Memory ExpansionVideo Frame Buffer

Use Scenario: Non-volatile program storage and I/O mapping table retention in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) memory providing deterministic access for cyclic scan execution and diagnostics logging.

Use Value: Guaranteed data retention in ZZ sleep mode enables power-loss-safe state preservation without battery backup.

Use Scenario: Intermediate frame storage in HD video scalers or HDMI transceivers requiring seamless 1080p60 pixel streaming.

IC Role / Device Role / Timing Role: Dual-port-capable buffer (via time-multiplexed reads/writes) synchronized to pixel clock domain using ADV-controlled burst transfers.

Use Value: 3.8 ns tCD and 100-pin TQFP layout support clean signal routing for 74.25 MHz pixel clocks with margin for jitter and skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1355BV18-167BZC144-ball BGA, 167 MHz max, 256K × 18, same VDD/VDDQ but different pinout and burst control (no LBO)Requires PCB redesign; lacks linear/interleaved burst selection; higher speed but no industrial temp optionSelect only if board space allows BGA and 167 MHz timing margin is critical; verify ADV/LBO replacement logic
AS7C3256A-15JCSOJ-44, 15 ns async access, 32K × 8, 5V tolerant, no burst or pipeliningNot functionally equivalent: asynchronous, lower density, no burst mode or clocked interfaceUse only for legacy 5V systems where synchronous timing and burst performance are not required

Compared with CY7C1355BV18-167BZC and AS7C3256A-15JC, the 71V3578S150PFG8 uniquely delivers industrial-temperature 150 MHz burst operation in a manufacturable TQFP package with configurable burst order-making it optimal for new designs demanding reliability, timing precision, and layout simplicity.

Availability

71V3578S150PFG8 is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, industrial PLC memory expansion, and video frame buffering requiring stable component supply across commercial and industrial temperature grades.

Supply support for 71V3578S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics.

The 71V3578S150PFG8 belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for high-speed cache, buffer, and FIFO applications in networking, telecommunications, and digital signal processing systems.

FAQ

What is the maximum clock frequency supported by the 71V3578S150PFG8?

The 71V3578S150PFG8 is rated for 150 MHz operation, corresponding to a minimum clock cycle time (tCYC) of 6.7 ns. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device also supports 133 MHz operation (7.5 ns cycle time) for lower-power or margin-sensitive implementations.

Does the 71V3578S150PFG8 support both linear and interleaved burst modes?

Yes, the 71V3578S150PFG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is an asynchronous static input and must remain stable during active operation.

What is the function of the ADV pin on the 71V3578S150PFG8?

The ADV (Burst Address Advance) pin on the 71V3578S150PFG8 controls burst counter progression. When ADV is LOW, the internal burst counter increments to generate the next sequential address in the burst sequence. When ADV is HIGH, burst advancement halts-allowing suspension of the burst for partial-word updates or synchronization with external logic.

How does the 71V3578S150PFG8 handle power-down and sleep modes?

The 71V3578S150PFG8 supports two low-power states: CMOS standby (ISB1 ≤35 mA) when deselected, and full sleep mode (IZZ ≤35 mA) activated by driving ZZ HIGH. In sleep mode, the internal clock is gated, but data retention is guaranteed across the industrial temperature range without external refresh or backup power.

Are BW3 and BW4 pins functional on the 71V3578S150PFG8?

No, BW3 and BW4 are not applicable for the 71V3578S150PFG8. As explicitly noted in the datasheet (Pin Description Summary, Note 1), these pins are reserved and unused for the 256K × 18 configuration. Only BW1 and BW2 are active, controlling byte groups I/O0–I/O8/I/OP1 and I/O9–I/O17/I/OP2 respectively.

71V3578S150PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
256K x 18
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3578S150PFG8 FAQ

1.How can I place an order for 71V3578S150PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3578S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3578S150PFG8 reliable?

The price and inventory of 71V3578S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S150PFG8 is usually 5 days.

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71V3578S150PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3578S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3578S150PFG8?

For technical support, including 71V3578S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S150PFG8 requirements.

6.How does Aetrix verify that 71V3578S150PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V3578S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S150PFG8 meets industry standards.

7.What is the process for return or replacement of 71V3578S150PFG8?

All 71V3578S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S150PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3578S150PFG8 part is unused and in its original packaging.

Return procedure for 71V3578S150PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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