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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3578S150PFGI

Name: 71V3578S150PFGI
Brand: Renesas
SKU: 71V3578S150PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3578S150PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3578S150PFGI.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V3578S150PFGI from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150MHz (3.8ns clock access time), supports linear/interleaved burst modes via LBO, and features global write (GW), byte write enables (BW1–BW2), and sleep mode (ZZ). It is used in high-speed cache and buffer applications in networking line cards and telecom baseband processors.

For engineers reviewing the 71V3578S150PFGI datasheet, 71V3578S150PFGI pinout, 71V3578S150PFGI application, or 71V3578S150PFGI equivalent, key selection criteria include burst-mode timing compliance, industrial-temperature operation (−40°C to +85°C), TQFP-100 package compatibility, and pipelined read/write cycle support for deterministic latency in real-time systems.

Technical Context

The 71V3578S150PFGI implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting four-word bursts with pipelined output staging-first word appears one clock cycle after address latch, subsequent words on successive rising edges.

It uses separate core (VDD) and I/O (VDDQ) 3.3V supplies, supports self-timed writes via GW/BWE/BWx logic, and enters low-power sleep mode when ZZ=HIGH (IZZ ≤ 35mA). The device is fully deselected in one clock cycle and retains data during sleep.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 18-bit (4.6 Mbit); configured as 18-bit-wide data bus with A0–A17 addressing
Clock Frequency	150 MHz - enables 6.7 ns clock cycle time for deterministic system timing in high-throughput buffers
Access Time	3.8 ns - clock-to-valid-data delay (tCD) at 150 MHz, critical for meeting setup/hold margins in pipelined reads
Operating Temperature	−40°C to +85°C - qualified for industrial environments including base station RF units and industrial PLCs
Supply Voltages	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - dual-rail design isolates core logic noise from I/O switching transients
Power Consumption	IDDACT = 305 mA (max, industrial), IZZ = 35 mA (sleep) - enables thermal management in dense packet-processing modules
Burst Mode Control	LBO input selects linear or interleaved 4-word burst sequence - required for cache-line alignment with x86 or PowerPC processors

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3578S150PFGI" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous address latching on ADSP/ADSC edge; A0–A17 fully decode 256K × 18 memory space
CLK	Master Clock Input	Single-phase edge-triggered reference for all registers; defines tCYC = 6.7 ns timing window
GW, BWE, BW1–BW2	Write Control Inputs	GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2
ADV, ADSP, ADSC	Burst & Address Status	ADV advances burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously
LBO, ZZ	Mode Configuration	LBO = LOW → linear burst; ZZ = HIGH → sleep mode (clock gated, IZZ ≤ 35 mA, data retention guaranteed)
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus + 2 parity bits; registered input/output paths ensure clean timing closure
CE, CS0, CS1	Chip Enable Logic	Three-level chip select: CE (active LOW), CS0 (active HIGH), CS1 (active LOW) - supports multi-chip memory banks
OE	Output Enable	Asynchronous control of I/O drivers; allows output disable without affecting internal state or burst sequence

Key Features

Feature	Design Value
Pipelined Burst Outputs	First data word available one clock cycle after address latch; next three words on successive CLK edges - eliminates wait states in sequential memory accesses
Single-Cycle Deselect	Device fully deselected within one CLK period upon CE/CS deassertion - prevents bus contention during rapid bank switching
Self-Timed Write Cycle	Internal write timing determined by GW/BWE/BWx sampling at CLK edge - removes external write-pulse generation complexity
Industrial Temperature Range	Guaranteed operation from −40°C to +85°C with full AC/DC specs - suitable for outdoor telecom infrastructure and factory automation controllers
Green Packaging	Lead-free, RoHS-compliant TQFP-100 (PFGI suffix) - meets environmental compliance requirements for global OEM shipments

Applications

Networking Line Card Buffer	Telecom Baseband Processor Cache
Use Scenario: High-speed packet buffering in 10G Ethernet MAC layer, where burst-aligned data must be stored and retrieved with sub-4ns latency. IC Role / Device Role / Timing Role: Synchronous SRAM providing 150MHz pipelined burst reads/writes to match SERDES interface timing. Use Value: Eliminates FIFO synchronization logic; 3.8ns tCD ensures deterministic read response for time-sensitive traffic shaping.	Use Scenario: L1 instruction/data cache for multicore DSPs in wireless baseband units handling LTE/5G PHY layer processing. IC Role / Device Role / Timing Role: Low-latency, burst-capable memory interfacing directly with processor AXI-like bus using ADV/ADSP handshake. Use Value: Linear burst mode (LBO=LOW) aligns with 64-byte cache lines; single-cycle deselect enables rapid context switching between radio channels.
Industrial PLC Motion Controller	Radar Signal Processing Buffer
Use Scenario: Real-time motion profile storage and update in servo drive controllers requiring deterministic jitter-free memory access under −40°C cold-start conditions. IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as position/velocity lookup table with guaranteed timing across full temperature range. Use Value: IZZ ≤ 35 mA sleep current extends battery-backed operation; ZZ-controlled power-down reduces thermal drift in precision analog subsystems.	Use Scenario: Intermediate storage for FFT results in pulsed-Doppler radar front ends, where burst-mode writes capture consecutive chirp samples without CPU intervention. IC Role / Device Role / Timing Role: High-reliability SRAM with pipelined writes accepting ADC data streams at 150 MSPS via GW-triggered bursts. Use Value: Self-timed write eliminates external write strobe generation; 18-bit width matches complex IQ sample format, reducing bus width vs. 32-bit alternatives.

Networking Line Card Buffer

Telecom Baseband Processor Cache

Use Scenario: High-speed packet buffering in 10G Ethernet MAC layer, where burst-aligned data must be stored and retrieved with sub-4ns latency.

IC Role / Device Role / Timing Role: Synchronous SRAM providing 150MHz pipelined burst reads/writes to match SERDES interface timing.

Use Value: Eliminates FIFO synchronization logic; 3.8ns tCD ensures deterministic read response for time-sensitive traffic shaping.

Use Scenario: L1 instruction/data cache for multicore DSPs in wireless baseband units handling LTE/5G PHY layer processing.

IC Role / Device Role / Timing Role: Low-latency, burst-capable memory interfacing directly with processor AXI-like bus using ADV/ADSP handshake.

Use Value: Linear burst mode (LBO=LOW) aligns with 64-byte cache lines; single-cycle deselect enables rapid context switching between radio channels.

Industrial PLC Motion Controller

Radar Signal Processing Buffer

Use Scenario: Real-time motion profile storage and update in servo drive controllers requiring deterministic jitter-free memory access under −40°C cold-start conditions.

IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as position/velocity lookup table with guaranteed timing across full temperature range.

Use Value: IZZ ≤ 35 mA sleep current extends battery-backed operation; ZZ-controlled power-down reduces thermal drift in precision analog subsystems.

Use Scenario: Intermediate storage for FFT results in pulsed-Doppler radar front ends, where burst-mode writes capture consecutive chirp samples without CPU intervention.

IC Role / Device Role / Timing Role: High-reliability SRAM with pipelined writes accepting ADC data streams at 150 MSPS via GW-triggered bursts.

Use Value: Self-timed write eliminates external write strobe generation; 18-bit width matches complex IQ sample format, reducing bus width vs. 32-bit alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18-167BZI	144K × 18-bit, 167MHz, 3.3V, 100-pin TQFP; no LBO pin; fixed linear burst only	Lacks interleaved burst mode and ADV/ADSC dual-address-status support - limits compatibility with cache-coherent systems	Select when maximum speed (167MHz) is prioritized over flexible burst sequencing and processor/cache controller interface flexibility
AS7C3256A-15JCIN	256K × 18-bit, 150MHz, 3.3V, 100-pin TQFP; asynchronous OE; no pipelined outputs or burst counter	No burst capability or pipelining - requires additional glue logic for burst transfers and adds 2–3 ns read latency	Select only for legacy designs where synchronous burst features are unused and cost sensitivity outweighs performance loss

Compared with CY7C1315KV18-167BZI and AS7C3256A-15JCIN, the 71V3578S150PFGI uniquely delivers industrial-temperature 150MHz burst operation with programmable linear/interleaved sequences and true single-cycle deselect - essential for cache coherency and real-time determinism in modern embedded signal processors.

Availability

71V3578S150PFGI is available at Aetrix Electronics and suitable for networking line cards, telecom baseband processors, industrial PLCs, and radar signal processing modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3578S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3578S150PFGI belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-bandwidth buffering and caching in real-time digital signal processing and packet-forwarding systems.

FAQ

What is the memory organization and data bus width of the 71V3578S150PFGI?

The 71V3578S150PFGI is organized as 256K × 18 bits (4.6 Mbit total), with an 18-bit data bus (I/O0–I/O17) plus two parity bits (I/OP1–I/OP2). This configuration supports 18-bit-wide transfers aligned to standard cache line sizes and matches common DSP and FPGA data-path widths without requiring byte-lane masking.

Does the 71V3578S150PFGI support both linear and interleaved burst modes?

Yes, the 71V3578S150PFGI supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11), LBO = HIGH selects interleaved (00→01→11→10). This dual-mode capability enables compatibility with both x86-style and PowerPC-style cache controllers without hardware redesign.

What is the function of the ADV, ADSP, and ADSC pins on the 71V3578S150PFGI?

ADV advances the internal burst counter on each active cycle; ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that trigger address register loading. ADSP is gated by CE, while ADSC operates independently - enabling flexible integration with either processor- or cache-initiated burst sequences in the 71V3578S150PFGI.

How does the sleep mode (ZZ pin) operate on the 71V3578S150PFGI?

When ZZ is driven HIGH, the 71V3578S150PFGI enters full sleep mode: the internal clock is gated, core logic is powered down, and supply current drops to ≤35 mA (industrial grade). Data retention is guaranteed, and recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume.

Is the 71V3578S150PFGI pin-compatible with the 71V3576S150PFGI?

No - the 71V3578S150PFGI (256K × 18) and 71V3576S150PFGI (128K × 36) have different memory organizations and incompatible pinouts: BW3/BW4 are NC on the 71V3578S150PFGI but functional on the 71V3576S150PFGI, and address pin count differs (A0–A17 vs. A0–A16). PCB layout is not interchangeable.

71V3578S150PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V3578S150PFGI FAQ

1.How can I place an order for 71V3578S150PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3578S150PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3578S150PFGI reliable?

The price and inventory of 71V3578S150PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578S150PFGI is usually 5 days.

3.What payment methods are accepted for 71V3578S150PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3578S150PFGI transactions.

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71V3578S150PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3578S150PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3578S150PFGI?

For technical support, including 71V3578S150PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578S150PFGI requirements.

6.How does Aetrix verify that 71V3578S150PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3578S150PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S150PFGI meets industry standards.

7.What is the process for return or replacement of 71V3578S150PFGI?

All 71V3578S150PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S150PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3578S150PFGI part is unused and in its original packaging.

Return procedure for 71V3578S150PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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