Renesas 71V3578S150PFGI8
- Part No.:
- 71V3578S150PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3578S150PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3578S150PFGI8 from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150 MHz (3.8 ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enable (BWE), and sleep mode (ZZ) for low-power operation in industrial systems.
For engineers reviewing the 71V3578S150PFGI8 datasheet, 71V3578S150PFGI8 pinout, 71V3578S150PFGI8 application, or 71V3578S150PFGI8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial temperature support (–40°C to +85°C), and pipelined read/write cycle integrity under synchronous control.
Technical Context
The 71V3578S150PFGI8 implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO configuration-linear (LBO=LOW) or interleaved (LBO=HIGH)-with wraparound behavior after four cycles.
Write operations are self-timed and support multiple configurations: global write (GW active), byte-select writes (BWE + BW1–BW4), or mixed-mode control. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, and enters ultra-low-power sleep mode when ZZ=HIGH, retaining data with IZZ ≤ 35 mA at industrial temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit); optimized for 18-bit data bus width in high-speed cache or buffer applications |
| Clock Frequency | 150 MHz maximum; enables 6.7 ns clock cycle time for deterministic timing-critical systems |
| Access Time | 3.8 ns clock-to-data (tCD); guarantees pipelined output validity one cycle after clock rise |
| Operating Temperature | –40°C to +85°C industrial grade; validated for continuous operation in embedded control and telecom infrastructure |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; decoupled core/I/O rails reduce noise coupling in mixed-signal environments |
| Power Consumption | IDD = 305 mA max (150 MHz, industrial); ISB2 = 115 mA (clock running, deselected); IZZ = 35 mA (full sleep) |
| Burst Mode | Four-word burst with programmable linear/interleaved order; eliminates external address sequencing logic |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 identifier located at top-left corner (counterclockwise numbering).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used fully for 256K×18 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous registers (address, data, control) edge-triggered on rising CLK |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2 (BW3/BW4 not applicable per datasheet note); BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously with CE |
| LBO, ZZ | Mode Configuration | LBO selects linear (LOW) or interleaved (HIGH) burst order; ZZ=HIGH forces sleep mode with CLK gating and minimal current draw |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; registered input/output paths ensure setup/hold compliance at 150 MHz |
| CS0, CS1, CE | Chip Enable Logic | Three-level chip select: CE (LOW), CS0 (HIGH), CS1 (LOW) required simultaneously for device activation |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS (common ground) require local decoupling; NC pins (e.g., 14, 64) are no-connect per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined burst reads | Delivers first valid output on second CLK edge after address load; subsequent burst words appear on consecutive edges-reducing effective latency in processor interfaces |
| Single-cycle deselect | Device transitions to high-impedance or standby state within one clock cycle upon CE/CS deassertion-enabling rapid bus sharing without glue logic |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation; compatible with fixed-clock systems lacking dynamic timing control |
| Industrial-grade power management | ZZ sleep mode draws ≤35 mA at +85°C; supports thermal-aware system power budgeting in fanless or sealed enclosures |
| Configurable burst order | LBO pin statically sets linear (cache-friendly sequential) or interleaved (DSP-friendly strided) addressing-no firmware overhead required |
Applications
| Network Packet Buffering | Real-Time Signal Processing |
|---|---|
|
Use Scenario: Storing incoming Ethernet frames in a Layer 2 switch ASIC before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst read capability to feed parallel lookup engines. Use Value: 150 MHz clock rate and pipelined outputs sustain 2.7 Gbps sustained throughput (18-bit × 150 MHz), matching Gigabit PHY line rates without bottlenecks. |
Use Scenario: Holding coefficient tables and intermediate results in a radar DSP subsystem operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Synchronous memory interface for deterministic FIR filter execution with zero wait states. Use Value: Industrial temperature rating and single-cycle deselect allow seamless context switching between multiple filter banks without timing uncertainty. |
| Industrial PLC Data Logging | Telecom Baseband Modem Buffer |
|
Use Scenario: Capturing sensor timestamps and analog readings in a programmable logic controller with nonvolatile backup. IC Role / Device Role / Timing Role: Volatile high-speed scratchpad memory interfaced to ARM Cortex-M7 with AXI bus bridge. Use Value: Sleep mode (ZZ) reduces idle power to ≤35 mA while preserving data-extending battery-backed runtime during brownout conditions. |
Use Scenario: Supporting QAM symbol interleaving/deinterleaving in a DOCSIS 3.1 cable modem's physical layer. IC Role / Device Role / Timing Role: Burst-access memory for cyclic redundancy and mapping logic requiring predictable 4-word sequences. Use Value: Linear/interleaved burst mode selection via LBO matches both convolutional and block coding algorithms without reconfiguration delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-167BZC | 256K × 18-bit, 167 MHz, 3.3V, 100-pin TQFP; supports JTAG boundary scan but lacks LBO-configurable burst order | Preferred where IEEE 1149.1 testability is required; not suitable for systems needing runtime burst-order reconfiguration | Select when boundary-scan diagnostics outweigh burst flexibility; verify ADV/LBO signal routing compatibility |
| AS7C3256A-15JC | 256K × 18-bit, 150 MHz, 3.3V, 100-pin TQFP; asynchronous OE but no pipelined outputs or burst counter | Applicable in simpler control-plane buffers where burst efficiency is secondary to cost; requires external address sequencing | Choose for cost-sensitive designs without burst timing constraints; expect added logic for multi-word transfers |
Compared with CY7C1371DV33-167BZC and AS7C3256A-15JC, the 71V3578S150PFGI8 uniquely delivers pipelined burst reads with selectable linear/interleaved order in an industrial-grade package-enabling higher throughput and lower system-level complexity in real-time data path applications.
Availability
71V3578S150PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, real-time signal processing, industrial PLC data logging, and telecom baseband modem buffer applications requiring stable component supply across extended temperature ranges.
Supply support for 71V3578S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3578S150PFGI8 belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-throughput data buffering in systems demanding deterministic timing and industrial reliability.
FAQ
What memory organization does the 71V3578S150PFGI8 support?
The 71V3578S150PFGI8 is organized as 256K × 18 bits (4.6 Mbit), with dedicated address pins A0–A17 supporting full addressing in this configuration. It does not support the 128K × 36 mode-this is reserved for the 71V3576S variant. The 18-bit data width aligns with common DSP and telecom bus architectures.
Does the 71V3578S150PFGI8 support both linear and interleaved burst modes?
Yes, the 71V3578S150PFGI8 supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear burst order is selected; when LBO = HIGH, interleaved burst order is selected. This selection is static and must remain stable during operation per datasheet specification.
What is the function of the ZZ pin on the 71V3578S150PFGI8?
The ZZ pin on the 71V3578S150PFGI8 controls full sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤35 mA (industrial grade) while maintaining data retention. ZZ has an internal pull-down, so it defaults to active mode if left unconnected.
Are BW3 and BW4 functional on the 71V3578S150PFGI8?
No, BW3 and BW4 are not applicable for the 71V3578S150PFGI8, as explicitly stated in the datasheet (Pin Description Summary, Note 1). Only BW1 and BW2 are used-BW1 controls I/O0–I/O8 and I/OP1, BW2 controls I/O9–I/O17 and I/OP2-matching its 18-bit + 2-parity structure.
What package type and pin count does the 71V3578S150PFGI8 use?
The 71V3578S150PFGI8 uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm body dimensions. Pins marked "NC" (e.g., 14, 64) are no-connect and may be left floating or tied to VDD per datasheet guidance.
71V3578S150PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3578S150PFGI8 FAQ
1.How can I place an order for 71V3578S150PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3578S150PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 71V3578S150PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3578S150PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578S150PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3578S150PFGI8?
All 71V3578S150PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578S150PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3578S150PFGI8 part is unused and in its original packaging.
Return procedure for 71V3578S150PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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