Renesas 71V3578YS133PFG
- Part No.:
- 71V3578YS133PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3578YS133PFG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3578YS133PFG from IDT is a 256K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO pin, and features global write (GW), byte write enables (BW1–BW2), and sleep mode (ZZ). Used in high-speed cache and memory subsystems for network processors and telecom line cards.
For engineers reviewing the 71V3578YS133PFG datasheet, 71V3578YS133PFG pinout, 71V3578YS133PFG application, or 71V3578YS133PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial temperature support (–40°C to +85°C), and 3.3V I/O/core voltage alignment with legacy SRAM-based control-plane designs.
Technical Context
The 71V3578YS133PFG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no runtime reconfiguration allowed.
It uses self-timed write cycles gated by GW, BWE, and BW1–BW2 (BW3/BW4 not applicable per datasheet), with pipelined output registers delivering first data one clock cycle after address latch. Deselect occurs in a single CLK cycle, and ZZ input enables full-sleep mode with 30–35µA current draw.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit); distinct from 128K × 36-bit 71V3576 variant - not interchangeable in layout or addressing |
| Clock Frequency | 133 MHz maximum; defines system bus timing budget - tCYC = 7.5 ns min, constraining PCB trace length and termination |
| Access Time | 4.2 ns clock-to-data (tCD); pipelined output register ensures deterministic timing independent of load capacitance |
| Supply Voltages | VDD = VDDQ = 3.3 V ±5%; separate core/I/O rails allow independent decoupling and noise isolation |
| Operating Temperature | –40°C to +85°C (Industrial grade); validated across full range for reliability in base station and industrial controller environments |
| Power Consumption | IDD = 250 mA (133 MHz, commercial); ISB2 = 100 mA (clock running standby); IZZ = 30 µA (full sleep) - enables low-power idle states |
| Burst Mode | Four-word burst initiated by ADV=LOW; LBO selects linear or interleaved A0/A1 sequence - critical for cache-line alignment |
Pinout & Package
Package: JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm, 0.5 mm pitch. Pin 1 marked by corner notch; pins 14 (VDD/NC) and 64 (ZZ default-active) require specific handling per datasheet notes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A1 advance during burst; A10–A17 used for 256K×18 configuration (vs. A0–A16 for 128K×36) |
| CLK | Clock Input | Single-phase edge-triggered reference; all registers (address, data, control) sample on rising edge - no internal PLL |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW writes all 18-bit words; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - BW3/BW4 unused |
| ADV, ADSP, ADSC | Burst & Address Status | ADV=LOW advances burst counter; ADSP (gated by CE) and ADSC load address register - dual-cache interface support |
| LBO | Burst Order Select | Static input: LBO=LOW → linear burst (00→01→10→11); LBO=HIGH → interleaved (00→01→11→10); must be stable during operation |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep; internal CLK gating and reduced current (IZZ = 30 µA); internal pull-down ensures active-low default |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; registered input/output paths; high-impedance when OE=HIGH or device deselected |
| CE, CS0, CS1 | Chip Enable/Select | Three-level decode: CE=LOW + CS0=HIGH + CS1=LOW enables device; allows bank selection in multi-SRAM systems |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data valid one clock after address latch; subsequent burst words appear on next three CLK edges - eliminates wait states in sequential fetches |
| Single-Cycle Deselect | Device enters high-Z output state within one CLK cycle upon CE/CS deassertion - prevents bus contention during rapid bank switching |
| Configurable Burst Order | LBO pin statically selects linear (cache-friendly) or interleaved (DSP-aligned) address sequences - no firmware overhead |
| Low-Power Sleep Mode | ZZ=HIGH reduces supply current to 30 µA while retaining data; recovery time tZZR = 100 ns - suitable for packet-processing duty cycling |
| Byte-Write Flexibility | BW1/BW2 enable independent 9-bit word writes without affecting adjacent bytes - preserves integrity in mixed-width register file updates |
Applications
| Network Processor Cache | Telecom Line Card Buffer |
|---|---|
|
Use Scenario: High-throughput packet header parsing and classification requiring low-latency, burst-access memory for lookup tables. IC Role / Device Role / Timing Role: 256K×18 SRAM serves as on-chip cache for TCAM-assisted forwarding engines; 133MHz clock aligns with SerDes PHY timing domains. Use Value: Pipelined 4-word burst delivers full 72-bit header in four cycles; single-cycle deselect enables rapid context switching between traffic classes. |
Use Scenario: Real-time buffering of voice-over-IP (VoIP) streams in carrier-grade DSLAMs with strict jitter constraints. IC Role / Device Role / Timing Role: Memory buffer for echo cancellation and jitter compensation algorithms; industrial temp rating ensures stability in uncontrolled cabinet environments. Use Value: 4.2ns tCD and 3.3V I/O interface reduce setup/hold margin requirements; ZZ sleep mode cuts idle power by >99% vs. active standby. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
|
Use Scenario: Cyclic logging of sensor telemetry in programmable logic controllers deployed in factory automation systems. IC Role / Device Role / Timing Role: Non-volatile backup buffer (paired with FRAM/NVRAM) storing last 10k samples; interfaced to ARM Cortex-M7 via parallel bus. Use Value: Industrial –40°C to +85°C rating guarantees operation under thermal stress; byte-write enables efficient timestamp+data updates without full-word overwrites. |
Use Scenario: Intermediate storage for digitized RF samples in phased-array radar front-ends prior to FFT processing. IC Role / Device Role / Timing Role: High-speed FIFO staging memory between ADC interface and DSP core; burst mode matches 4-sample FFT word size. Use Value: Linear burst (LBO=LOW) provides contiguous address sequence ideal for streaming; 100-pin TQFP footprint simplifies routing of 20+ data lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-133BZI | 256K×18, 133MHz, 3.3V, 100-pin TQFP; supports JTAG boundary scan; no LBO pin - fixed linear burst only | Lacks configurable burst order; requires redesign if interleaved addressing is needed; higher IDD (275 mA) | Choose when JTAG testability is required and burst sequence is fixed; verify ADV timing compatibility with existing controller |
| AS7C3256A-13JIN | 256K×16, 133MHz, 3.3V, 100-pin TQFP; no pipelined outputs - asynchronous read latency varies with load | 16-bit data width (vs. 18-bit + 2 parity); no burst counter or ADV/LBO logic - software-managed address incrementing required | Choose for cost-sensitive designs where parity is unnecessary and burst control is handled in firmware; expect ~1.5 ns longer effective access |
Compared with CY7C1315KV18-133BZI and AS7C3256A-13JIN, the 71V3578YS133PFG uniquely delivers hardware-configurable burst sequencing, pipelined determinism, and integrated parity - critical for real-time signal chain integrity where timing predictability outweighs JTAG debug needs or marginal BOM cost savings.
Availability
71V3578YS133PFG is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, and industrial PLC data log applications requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.
Supply support for 71V3578YS133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3578YS133PFG belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-bandwidth memory subsystems in network equipment, baseband units, and real-time control systems.
FAQ
What memory organization does the 71V3578YS133PFG implement?
The 71V3578YS133PFG implements a 256K × 18-bit organization (4.6 Mbit total), with dedicated A0–A17 address lines. This differs from the 128K × 36-bit 71V3576 variant - pinout and addressing are not compatible. The 18-bit data path includes I/O0–I/O17 plus I/OP1–I/OP2 parity bits, supporting error detection in mission-critical buffers.
Does the 71V3578YS133PFG support both linear and interleaved burst modes?
Yes, the 71V3578YS133PFG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, it executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). LBO is a static input and must remain stable during operation - dynamic switching is not supported.
What is the function of the ADV pin on the 71V3578YS133PFG?
The ADV (Burst Address Advance) pin on the 71V3578YS133PFG controls burst counter progression. When ADV = LOW, the internal counter advances to the next burst address on each CLK edge. When ADV = HIGH, burst advancement halts - enabling suspended burst or single-word access. ADV is sampled synchronously with CLK and must meet setup/hold timing relative to the clock.
How does the 71V3578YS133PFG handle power management?
The 71V3578YS133PFG offers three power states: active (IDD = 250 mA @133MHz), clock-running standby (ISB2 = 100 mA), and full sleep (IZZ = 30 µA). Sleep mode is activated asynchronously by driving ZZ = HIGH, which gates the internal clock and minimizes current draw while retaining data. Recovery time tZZR is guaranteed at 100 ns.
Are BW3 and BW4 functional on the 71V3578YS133PFG?
No, BW3 and BW4 are not functional on the 71V3578YS133PFG. Per the datasheet (Note 1, Pin Description Summary), these pins are reserved and unused for the 256K × 18 configuration. Only BW1 (controls I/O0–I/O8/I/OP1) and BW2 (controls I/O9–I/O17/I/OP2) are active - matching the 18-bit data width and 2-byte granularity.
71V3578YS133PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
71V3578YS133PFG FAQ
1.How can I place an order for 71V3578YS133PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3578YS133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3578YS133PFG reliable?
The price and inventory of 71V3578YS133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3578YS133PFG is usually 5 days.
3.What payment methods are accepted for 71V3578YS133PFG?
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Once your 71V3578YS133PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3578YS133PFG?
For technical support, including 71V3578YS133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3578YS133PFG requirements.
6.How does Aetrix verify that 71V3578YS133PFG is sourced from the original manufacturer or authorized distributors?
All 71V3578YS133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3578YS133PFG meets industry standards.
7.What is the process for return or replacement of 71V3578YS133PFG?
All 71V3578YS133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3578YS133PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3578YS133PFG part is unused and in its original packaging.
Return procedure for 71V3578YS133PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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