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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3579S65PFG

Name: 71V3579S65PFG
Brand: Renesas
SKU: 71V3579S65PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3579S65PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3579S65PFG.pdf

Description:: IC SRAM 4.5MBIT PAR 100TQFP

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Product details

Overview

71V3579S65PFG from Renesas Electronics is a 256K × 18-bit (4.5 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 6.5 ns access time at 133 MHz, TQFP-100 package, and industrial temperature support (–40°C to +85°C). It delivers burst-mode data throughput for high-speed cache and buffer applications in networking and telecom infrastructure.

For engineers reviewing the 71V3579S65PFG datasheet, 71V3579S65PFG pinout, 71V3579S65PFG application, or 71V3579S65PFG equivalent, key selection criteria include its 256K × 18 memory configuration, 6.5 ns commercial-grade timing, TQFP-100 mechanical compatibility, linear/interleaved burst control via LBO, and self-timed write with byte-select capability.

Technical Context

This SRAM implements a synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path - enabling zero-cycle-output-latency reads after clock edge. Its internal burst counter advances on ADV=LOW and supports four-word bursts defined by LBO state (linear or interleaved).

The device uses dual 3.3V supplies (VDD core, VDDQ I/O), supports single-cycle deselect, and features asynchronous sleep mode (ZZ input) with 30 µA full-sleep current. Byte write enables (BW1–BW2 only; BW3/BW4 not applicable per datasheet note) and global write (GW) provide flexible write granularity without external logic.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 18-bit (4.5 Mbit); supports high-bandwidth 18-bit data paths in DSP and packet processing systems.
Access Time / Max Frequency	6.5 ns / 133 MHz; available only in TQFP package and commercial temperature range - defines peak read throughput.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails enable noise isolation between logic and I/O domains.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence; static configuration requiring no runtime reconfiguration.
Power Management	ZZ input enables full sleep mode (IZZ ≤ 35 µA); eliminates dynamic power while retaining data - critical for low-power standby.
Output Architecture	Flow-through (no output register); data appears on I/O pins within tCD (≤6.5 ns) after CLK rising edge - minimizes read latency.
Write Control	Self-timed write using GW (global) or BW1/BW2 (byte-level); BW3/BW4 are not connected - simplifies PCB layout and control logic.

Pinout & Package

71V3579S65PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; top-side marking includes "71V3579S65PFG" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; A0–A17 fully utilized in 256K × 18 mode for 262,144 word addressing.
CLK	Clock Input	Single-phase system clock; all synchronous inputs sampled on rising edge - defines timing reference for all operations.
CE, CS0, CS1	Chip Enable / Selects	Three-input chip select logic (CE LOW, CS0 HIGH, CS1 LOW) enables hierarchical memory decoding and bank selection.
ADV	Burst Address Advance	Active-LOW signal that increments internal burst counter; held HIGH to suspend burst - enables precise burst termination.
LBO	Linear/Interleaved Burst Order	Asynchronous static input; LOW = linear burst (00→01→10→11), HIGH = interleaved - determines cache line traversal order.
GW, BWE, BW1, BW2	Write Control Inputs	GW writes all 18-bit words; BWE enables byte write; BW1/BW2 control lower/upper 9-bit bytes - no BW3/BW4 connection per datasheet.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18 data bits + 2 parity bits; synchronous input registration, flow-through output - supports error-correcting interfaces.
ZZ	Sleep Mode Input	Asynchronous HIGH-active input; gates internal clock and reduces ICC to ≤35 µA - enables rapid entry/exit from ultra-low-power state.

Key Features

Feature	Design Value
256K × 18 memory configuration	Optimized for 18-bit DSP buses and packet header buffers - avoids glue logic required for 32-bit alignment.
6.5 ns access time (TQFP only)	Enables 133 MHz burst reads in commercial applications - matches high-speed SerDes and switch fabric timing budgets.
Flow-through output architecture	Eliminates output register delay - critical for real-time buffering where read-to-use latency must be minimized.
Single-cycle deselect capability	Allows immediate bus release after read/write - essential for multi-master arbitration and low-latency interrupt handling.
Industrial temperature support (–40°C to +85°C)	Validated operation across extended thermal range - suitable for base station RF modules and outdoor telecom equipment.
Asynchronous ZZ sleep mode	Reduces active power by >90% during idle periods - extends uptime in battery-backed or energy-harvested systems.

Applications

Networking Packet Buffer	DSP Data Cache
Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or classification. IC Role / Device Role / Timing Role: High-speed synchronous buffer with burst read/write to match MAC controller bandwidth. Use Value: 6.5 ns access and 133 MHz clock support 1.2 Gbps sustained throughput - exceeds Gigabit Ethernet line rate.	Use Scenario: On-chip cache extension for TI C6000 or Analog Devices SHARC processors executing FFT-based signal analysis. IC Role / Device Role / Timing Role: Low-latency 18-bit data store synchronized to processor clock domain. Use Value: Flow-through outputs deliver first data word in ≤6.5 ns - eliminates pipeline stalls in tight-loop DSP kernels.
Telecom Line Card Buffer	Industrial PLC Memory Expansion
Use Scenario: Jitter attenuation and packet re-timing in SFP+ line cards interfacing with FPGA-based framer logic. IC Role / Device Role / Timing Role: Synchronous FIFO replacement with configurable burst order for deterministic latency. Use Value: LBO-selectable linear/interleaved burst matches SONET/SDH frame alignment requirements - ensures phase coherence.	Use Scenario: Real-time I/O mapping and recipe storage in modular PLC backplanes operating in factory-floor environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-volatile shadow memory with fast write recovery. Use Value: –40°C to +85°C operation and ZZ sleep mode ensure reliable retention during brownouts and thermal cycling.

Networking Packet Buffer

DSP Data Cache

Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or classification.

IC Role / Device Role / Timing Role: High-speed synchronous buffer with burst read/write to match MAC controller bandwidth.

Use Value: 6.5 ns access and 133 MHz clock support 1.2 Gbps sustained throughput - exceeds Gigabit Ethernet line rate.

Use Scenario: On-chip cache extension for TI C6000 or Analog Devices SHARC processors executing FFT-based signal analysis.

IC Role / Device Role / Timing Role: Low-latency 18-bit data store synchronized to processor clock domain.

Use Value: Flow-through outputs deliver first data word in ≤6.5 ns - eliminates pipeline stalls in tight-loop DSP kernels.

Telecom Line Card Buffer

Industrial PLC Memory Expansion

Use Scenario: Jitter attenuation and packet re-timing in SFP+ line cards interfacing with FPGA-based framer logic.

IC Role / Device Role / Timing Role: Synchronous FIFO replacement with configurable burst order for deterministic latency.

Use Value: LBO-selectable linear/interleaved burst matches SONET/SDH frame alignment requirements - ensures phase coherence.

Use Scenario: Real-time I/O mapping and recipe storage in modular PLC backplanes operating in factory-floor environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-volatile shadow memory with fast write recovery.

Use Value: –40°C to +85°C operation and ZZ sleep mode ensure reliable retention during brownouts and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V3579S75PFG	Slower 7.5 ns access time; supports both commercial and industrial temp ranges; same 256K × 18 config and TQFP-100 package.	Lower frequency ceiling (117 MHz) but broader temperature qualification - preferred for cost-sensitive industrial deployments.	Select when 133 MHz timing is unnecessary and extended temperature validation is mandatory.
AS7C3256B-10JIN	256K × 16 organization; 10 ns access; 3.3V core/I/O; 100-pin TQFP; no burst counter or LBO - asynchronous interface.	Lacks burst mode and flow-through output; requires external address sequencing logic - increases FPGA resource usage.	Choose only if system lacks burst-capable controllers and prioritizes lowest-cost commodity SRAM over performance.

Compared with 71V3579S75PFG and AS7C3256B-10JIN, the 71V3579S65PFG uniquely delivers 133 MHz burst throughput in a drop-in TQFP-100 footprint, making it optimal for latency-critical telecom and test equipment where every nanosecond of access time affects jitter budget and packet loss.

Availability

71V3579S65PFG is available at Aetrix Electronics and suitable for networking packet buffers, DSP data caches, telecom line card buffers, and industrial PLC memory expansion requiring stable component supply and long-term production continuity.

Supply support for 71V3579S65PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, telecom, and real-time embedded systems.

FAQ

What memory organization does the 71V3579S65PFG support?

The 71V3579S65PFG is configured as 256K × 18-bit (4.5 Mbit), optimized for 18-bit data buses common in DSP and packet-processing architectures. It does not support the 128K × 36 configuration - that is exclusive to the 71V3577S family members.

Is the 71V3579S65PFG compatible with industrial temperature operation?

No - the 71V3579S65PFG is rated for commercial temperature only (0°C to +70°C). For industrial operation (–40°C to +85°C), Renesas specifies the 71V3579S75PFG or 71V3579S80PFG variants; the "65" speed grade is TQFP-exclusive and commercially qualified only.

Which byte write enables are functional on the 71V3579S65PFG?

Only BW1 and BW2 are implemented on the 71V3579S65PFG; BW3 and BW4 are not applicable per Renesas datasheet note. BW1 controls I/O0–I/O8 and I/OP1; BW2 controls I/O9–I/O17 and I/OP2 - enabling true 9-bit byte writes.

Does the 71V3579S65PFG support both linear and interleaved burst modes?

Yes - the LBO (Linear Burst Order) pin selects burst sequence: LBO = LOW enables linear burst (00→01→10→11), LBO = HIGH enables interleaved burst (00→01→11→10). This pin is asynchronous and must remain static during operation.

What is the role of the ADV pin in burst operation of the 71V3579S65PFG?

The ADV pin is an active-LOW synchronous input that advances the internal 2-bit burst counter. When ADV = LOW on a clock edge, the counter increments and next burst address is generated; when ADV = HIGH, burst is suspended and repeated address is used - enabling precise burst length control.

71V3579S65PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 6.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x20)

71V3579S65PFG FAQ

1.How can I place an order for 71V3579S65PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3579S65PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3579S65PFG reliable?

The price and inventory of 71V3579S65PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S65PFG is usually 5 days.

3.What payment methods are accepted for 71V3579S65PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S65PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3579S65PFG?

71V3579S65PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3579S65PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3579S65PFG?

For technical support, including 71V3579S65PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S65PFG requirements.

6.How does Aetrix verify that 71V3579S65PFG is sourced from the original manufacturer or authorized distributors?

All 71V3579S65PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S65PFG meets industry standards.

7.What is the process for return or replacement of 71V3579S65PFG?

All 71V3579S65PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S65PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3579S65PFG part is unused and in its original packaging.

Return procedure for 71V3579S65PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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