Renesas 71V3579S65PFG8

Overview

71V3579S65PFG8 from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 6.5 ns access time at 133 MHz in commercial-grade TQFP packaging, operates with 3.3V core and I/O supplies, and features LBO-controlled linear/interleaved burst mode for high-bandwidth cache or buffer applications.

For engineers reviewing the 71V3579S65PFG8 datasheet, 71V3579S65PFG8 pinout, 71V3579S65PFG8 application, or 71V3579S65PFG8 equivalent, key selection criteria include its 100-pin TQFP package, 256K × 18 organization, 6.5 ns tCD timing, ZZ-controlled sleep mode, and compatibility with burst-addressed processor/cache interfaces requiring deterministic latency and low-power standby.

Technical Context

The 71V3579S65PFG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-cycle-output-delay read cycles. Its internal burst counter advances on ADV=LOW, generating four consecutive addresses per initial request, with sequence order determined by the static LBO input.

Burst writes are supported via synchronous GW (global write) or byte-selectable BW1–BW2 (BW3/BW4 not applicable), while self-timed write cycles eliminate external timing constraints. Power management includes asynchronous ZZ-triggered deep-sleep mode with guaranteed data retention and sub-35 µA ISB1 current.

Key Specifications

Pinout & Package

71V3579S65PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is marked by a dot or notch; pins are arranged in counter-clockwise order starting from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3579S65PFG8, the 71V3577S65PFG8 offers higher data width but lower density, while the CY7C1372DV33-65BAXI matches density and speed but omits ADSC and uses MODE instead of LBO-requiring layout and firmware adaptation.

Availability

71V3579S65PFG8 is available at Aetrix Electronics and suitable for cache subsystems, network packet buffers, industrial data loggers, medical imaging frame stores, and high-reliability embedded controllers requiring stable component supply across production lifecycles.

Supply support for 71V3579S65PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for low-latency, burst-oriented memory subsystems in cache, networking, and real-time signal processing systems.

FAQ

What memory organization does the 71V3579S65PFG8 implement?

The 71V3579S65PFG8 implements a 256K × 18-bit organization, delivering 4.608 Mbit of total memory capacity. This configuration supports 18-bit data buses directly and is optimized for systems requiring balanced depth and width-such as cache line buffers or dual-channel ADC data capture. The 71V3579S65PFG8 does not support 128K × 36 mode; that variant is implemented in the pin-compatible 71V3577S65PFG8.

Does the 71V3579S65PFG8 support both linear and interleaved burst modes?

Yes, the 71V3579S65PFG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it performs interleaved burst (00→01→11→10). This selection is static and must remain stable during operation-the 71V3579S65PFG8 does not permit dynamic LBO toggling mid-burst.

What is the maximum clock frequency supported by the 71V3579S65PFG8?

The 71V3579S65PFG8 supports a maximum clock frequency of 133 MHz, achievable only with the 6.5 ns speed grade in the commercial temperature range (0°C to +70°C) and TQFP package. At this frequency, tCYC = 7.5 ns minimum and tCD = 6.5 ns maximum are guaranteed. Slower speeds (7.5 ns, 8 ns, 8.5 ns) extend operation into industrial temperature ranges but reduce maximum frequency to 117 MHz, 100 MHz, and 87 MHz respectively.

How does the ZZ pin function in the 71V3579S65PFG8?

The ZZ pin on the 71V3579S65PFG8 is an asynchronous input that places the device into full sleep mode when driven HIGH. In this state, internal clock gating reduces supply current to ≤30 µA while preserving all stored data. The 71V3579S65PFG8 exits sleep mode synchronously upon ZZ returning LOW and requires tZZR = 100 ns recovery before accepting new commands-no external refresh or initialization is needed.

Are BW3 and BW4 functional on the 71V3579S65PFG8?

No, BW3 and BW4 are not functional on the 71V3579S65PFG8. As explicitly noted in the Renesas datasheet, these pins are reserved and not applicable for the 71V3579 family. Only BW1 and BW2 are active-BW1 controls I/O0–I/O8 and I/OP1 (9 bits), BW2 controls I/O9–I/O17 and I/OP2 (9 bits). Using BW3/BW4 on the 71V3579S65PFG8 will have no effect on write operations.