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Renesas 71V3579S75PFG
- Part No.:
- 71V3579S75PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S75PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,752
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Product details
Overview
71V3579S75PFG from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 7.5 ns access time at up to 117 MHz, operates across –40°C to +85°C industrial temperature range, and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3579S75PFG datasheet, 71V3579S75PFG pinout, 71V3579S75PFG application, or 71V3579S75PFG equivalent, key selection criteria include burst mode support (linear/interleaved via LBO), low-latency flow-through read path, self-timed write with byte- or global-write control, and industrial-grade power-down (ZZ) and standby current specs.
Technical Context
The 71V3579S75PFG implements a synchronous, clock-driven architecture with registered address and data inputs, but unregistered (flow-through) data outputs - enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and selects sequence order via static LBO input (HIGH = interleaved, LOW = linear).
Write operation is fully self-timed: GW enables full-word writes, while BWE and BW1–BW2 (BW3/BW4 not applicable per datasheet note) enable selective byte writes. Chip enable logic uses CE, CS0 (active HIGH), and CS1 (active LOW) for hierarchical selection, with ADSP/ADSC providing processor- or cache-controller–driven address latching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.608 Mbit); no 128K × 36 configuration - confirmed for 71V3579 only |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial); 8.0 ns / 100 MHz; 8.5 ns / 87 MHz |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation in embedded telecom hardware |
| Power Consumption | ISB1 = 30–35 mA (standby, deselected), IZZ = 30–35 mA (full sleep via ZZ), IDD = 180–265 mA (active, fMAX) |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static during operation |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max clock-to-data; tOHZ = 3.5 ns max output disable delay |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 256K × 18 configuration per Renesas datasheet Figure 6450 drw 02b and Table 6450 tbl 02.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE (sync, active LOW), CS0 (sync, active HIGH), CS1 (sync, active LOW) |
| GW, BWE, BW1, BW2 | Write Controls | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst & Address Status | ADV (sync, LOW) advances burst counter; ADSP/ADSC (sync, LOW) load address register from processor/cache |
| LBO, ZZ | Mode Configuration | LBO (asynchronous, static) sets burst order; ZZ (asynchronous, HIGH) forces full sleep with data retention |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; synchronous input register, flow-through output path |
| CLK, OE, VDD, VDDQ, VSS | Timing & Power | Single-phase CLK (no DDR); OE (async, LOW) enables outputs; dedicated VDD (core) and VDDQ (I/O) supplies |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 7.5 ns max ensures deterministic read timing for real-time packet buffering |
| Self-timed burst write with byte granularity | GW + BWE + BW1/BW2 allow full-word or two independent 9-bit byte writes without external timing control |
| Single-cycle deselect capability | Deasserting CE/CS0/CS1 terminates ongoing burst in one clock cycle - critical for interrupt-latency-sensitive systems |
| Industrial temperature support | Validated operation from –40°C to +85°C with guaranteed IDD, ISB1, and IZZ across full range |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word sequences match CPU cache line fetch patterns without firmware overhead |
Applications
| Baseband Processing Unit | High-Speed Network Switch Buffer |
|---|---|
Use Scenario: Real-time processing of LTE/5G PHY layer data streams requiring low-latency, burst-access memory for FFT and channel estimation buffers. IC Role / Device Role / Timing Role: Synchronous SRAM acting as dual-port-accessible working memory with flow-through reads and self-timed writes synchronized to baseband clock domain. Use Value: 7.5 ns tCD and single-cycle deselect reduce pipeline stalls; 256K × 18 organization matches 16-/18-bit datapaths in TI C66x or Xilinx RFSoC-based designs. | Use Scenario: Packet buffering in 10G/25G Ethernet line cards where burst-mode reads accelerate header parsing and forwarding table lookups. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter SRAM interfaced directly to SerDes MAC controllers for zero-wait-state burst transfers. Use Value: Interleaved burst mode (LBO=HIGH) aligns with cache-line-aligned packet metadata access; 117 MHz operation sustains >2 Gbps sustained throughput. |
| Industrial PLC Motion Controller | Radar Signal Processing Memory |
Use Scenario: Deterministic I/O mapping and servo loop coefficient storage in EN 61508-certified motion controllers operating in harsh thermal environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing jitter-free, fail-safe memory for position loop tables and PID parameter sets accessed under hard real-time deadlines. Use Value: –40°C to +85°C rating and ZZ sleep mode (IZZ ≤ 35 mA) ensure reliability across ambient extremes; flow-through outputs eliminate timing uncertainty in closed-loop cycles. | Use Scenario: Chirp storage and FFT intermediate result buffering in automotive radar ECU modules with strict ASIL-B compliance requirements. IC Role / Device Role / Timing Role: Burst-capable SRAM serving as ping-pong buffer between ADC interface and DSP core, supporting continuous 77 GHz chirp acquisition. Use Value: Linear burst mode (LBO=LOW) matches sequential chirp sample ordering; 8.5 ns / 87 MHz mode provides margin for thermal derating while maintaining >1.5 Gbps effective bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375BV33-7BBXC | 256K × 18, 7 ns, 144-ball FBGA; no LBO pin; fixed interleaved burst only | Lacks configurable burst order; requires PCB redesign for package and pinout | Select when fixed interleaved burst suffices and FBGA layout is preferred over TQFP |
| AS7C3256A-7TIN | 256K × 18, 7 ns, 44-pin SOJ; asynchronous OE; no burst counter or ADV/LBO | No burst capability; higher read latency due to async OE path; limited to non-burst applications | Select only for cost-sensitive, non-burst legacy designs where TQFP footprint is unavailable |
Compared with CY7C1375BV33-7BBXC and AS7C3256A-7TIN, the 71V3579S75PFG uniquely delivers pin-compatible industrial TQFP packaging, hardware-selectable burst order (LBO), and true flow-through output timing - making it optimal for new designs requiring deterministic latency and flexible cache-line alignment.
Availability
71V3579S75PFG is available at Aetrix Electronics and suitable for baseband processing units, high-speed network switch buffers, and industrial PLC motion controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3579S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577/79 family was designed specifically for high-performance, low-latency memory subsystems in telecom infrastructure and real-time embedded systems demanding burst-mode bandwidth and industrial reliability.
FAQ
What memory organization does the 71V3579S75PFG support?
The 71V3579S75PFG is strictly configured as 256K × 18-bit (4.608 Mbit). Unlike the 71V3577S, it does not support the 128K × 36 configuration. This is explicitly stated in the datasheet pin configuration diagrams and functional description for the 71V3579 variant.
Does the 71V3579S75PFG support both linear and interleaved burst modes?
Yes, the 71V3579S75PFG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence; LBO = HIGH selects interleaved sequence. The datasheet confirms this behavior in Tables 14 and 15 and specifies LBO as a static input that must not change during operation.
Which byte write enable pins are functional on the 71V3579S75PFG?
Only BW1 and BW2 are functional on the 71V3579S75PFG. The datasheet explicitly states "BW3 and BW4 are not applicable for the 71V3579" (Note 1, page 3). BW1 controls I/O0–I/O8 and I/OP1; BW2 controls I/O9–I/O17 and I/OP2.
What is the maximum operating frequency for the 71V3579S75PFG in industrial temperature range?
In the industrial temperature range (–40°C to +85°C), the 71V3579S75PFG supports up to 117 MHz at 7.5 ns access time, 100 MHz at 8.0 ns, and 87 MHz at 8.5 ns. The 6.5 ns / 133 MHz speed is restricted to commercial temperature and TQFP package only - not valid for this part.
How does the ZZ pin function in the 71V3579S75PFG?
The ZZ pin on the 71V3579S75PFG is an asynchronous input that places the device into full sleep mode when driven HIGH, reducing supply current to IZZ ≤ 35 mA while retaining memory contents. It has an internal pull-down, so floating ZZ defaults to active mode. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW.
71V3579S75PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S75PFG FAQ
1.How can I place an order for 71V3579S75PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S75PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S75PFG reliable?
The price and inventory of 71V3579S75PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S75PFG is usually 5 days.
3.What payment methods are accepted for 71V3579S75PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S75PFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3579S75PFG?
71V3579S75PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S75PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S75PFG?
For technical support, including 71V3579S75PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S75PFG requirements.
6.How does Aetrix verify that 71V3579S75PFG is sourced from the original manufacturer or authorized distributors?
All 71V3579S75PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S75PFG meets industry standards.
7.What is the process for return or replacement of 71V3579S75PFG?
All 71V3579S75PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S75PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S75PFG part is unused and in its original packaging.
Return procedure for 71V3579S75PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S75PFG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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