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Renesas 71V3579S75PFG8
- Part No.:
- 71V3579S75PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S75PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,073
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Product details
Overview
71V3579S75PFG8 from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports burst read/write operations, single-cycle deselect, and low-power sleep mode via ZZ input - deployed in high-speed networking buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V3579S75PFG8 datasheet, 71V3579S75PFG8 pinout, 71V3579S75PFG8 application, or 71V3579S75PFG8 equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, TQFP thermal performance under sustained 117MHz operation, and byte-write enable logic compatibility with cache-coherent bus controllers.
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling deterministic tCD latency without output register delay. Its internal burst counter advances on ADV=LOW and selects linear or interleaved addressing per LBO pin state, supporting four-word bursts per address cycle.
Write control uses hierarchical enables: GW (global write) overrides BWE (byte write enable), which gates BW1–BW4 (individual byte writes); for the 71V3579S75PFG8, BW3 and BW4 are not applicable per datasheet note. Power management includes asynchronous ZZ-triggered sleep mode with guaranteed data retention and 30µA ISB2 current at fMAX.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit), configured as 18-bit words - matches 16-bit processor data buses with parity or 18-bit graphics frame buffers. |
| Access Time / Max Frequency | 7.5ns access time, supporting up to 117MHz clock - enables single-cycle reads in high-throughput packet buffering applications. |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - eliminates level-shifting requirements in 3.3V system designs. |
| Operating Temperature | –40°C to +85°C industrial grade - validated for deployment in base station RF modules and industrial PLCs. |
| Power Consumption | IDD = 255mA (117MHz, industrial), ISB2 = 90mA (clock running, deselected), IZZ = 35mA (full sleep) - enables thermal-aware power budgeting in dense memory arrays. |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin - reduces address bus traffic by 75% during sequential memory accesses. |
| Output Architecture | Flow-through (no output register) - delivers data on same-cycle clock edge with tCD ≤ 7.5ns, critical for zero-wait-state interfaces. |
Pinout & Package
71V3579S75PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm, RoHS-compliant. Pinout conforms to PKG100 configuration for 256K × 18 mode (per datasheet Figure 6.42-6).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A17 fully utilized in 256K × 18 mode for 262,144 word addressing. |
| CLK | Clock Input | Single-phase synchronous reference; all timing referenced to rising edge - no external PLL required. |
| CE, CS0, CS1 | Chip Enable/Select | Three-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW) - supports multi-chip memory banks with bank decoding. |
| GW, BWE, BW1–BW2 | Write Control | Global write (GW), byte write enable (BWE), and two 9-bit byte enables (BW1, BW2); BW3/BW4 unused per datasheet note. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits - supports ECC-capable systems and legacy 16+2 bus architectures. |
| ADV, ADSP, ADSC, LBO, ZZ, OE | Control Inputs | ADV advances burst counter; ADSP/ADSC load address registers from processor/cache; LBO selects burst order; ZZ enables sleep; OE controls output drivers asynchronously. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering valid data within 7.5ns of CLK rise - enables zero-latency read cycles in real-time control loops. |
| Single-cycle deselect | Device enters high-impedance state on next clock edge after CE/CS deassertion - prevents bus contention during rapid bank switching. |
| Configurable burst order (LBO) | LBO pin statically selects linear or interleaved 4-word burst sequence - matches cache line layouts in ARM Cortex-A/R or MIPS-based SoCs. |
| Asynchronous sleep mode (ZZ) | ZZ HIGH gates internal clock and reduces supply current to 35µA while retaining data - supports low-power idle states in telecom line cards. |
| 3.3V core and I/O supply | Single 3.3V rail for logic and I/O eliminates dual-supply complexity and decoupling overhead in FPGA-adjacent memory interfaces. |
Applications
| High-Speed Network Packet Buffer | DSP Real-Time Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with burst-read capability to feed ASIC packet processors. Use Value: 7.5ns tCD and 117MHz operation sustain 2.1 Gbps aggregate throughput across 18-bit bus, matching 10GbE line rates. | Use Scenario: Holding coefficient tables and intermediate FFT results in radar signal processing units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to TI C6000 or Analog Devices SHARC DSP parallel buses. Use Value: Flow-through outputs eliminate pipeline stalls; linear burst mode aligns with 4-sample FFT butterfly access patterns. |
| Industrial PLC I/O Mapping Memory | Medical Imaging Frame Store |
Use Scenario: Maintaining real-time status of 1024 discrete I/O points with deterministic scan-cycle updates. IC Role / Device Role / Timing Role: Deterministic-access memory mapped into microcontroller's external bus interface for cyclic polling. Use Value: Industrial temp rating (–40°C to +85°C) and single-cycle deselect ensure reliable operation in uncontrolled cabinet environments. | Use Scenario: Temporary storage of 1024×1024 pixel ultrasound frames prior to JPEG compression and display rendering. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced to FPGA video controller with burst-aligned DMA engine. Use Value: 256K × 18 organization supports 16-bit grayscale + 2-bit metadata per pixel; 7.5ns access enables full-frame readout in <15ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100BZXI | 128K × 32-bit, 100MHz max, 10ns access, 119-ball BGA only - no TQFP option. | Higher density per device but wider bus; requires PCB redesign for 32-bit interface and BGA assembly. | Select when system demands >4Mbit density and BGA layout is already established. |
| AS7C3256A-10JIN | 32K × 8-bit, 10ns access, 100MHz, 32-pin SOJ - smaller capacity, slower speed, different package. | Targeted at legacy 8-bit microcontrollers; lacks burst mode, flow-through output, and ZZ sleep. | Select only for cost-sensitive, low-bandwidth embedded control where feature set is secondary. |
Compared with CY7C1371DV33-100BZXI and AS7C3256A-10JIN, the 71V3579S75PFG8 uniquely balances 4.6Mbit density, 117MHz operation, TQFP manufacturability, and industrial-grade power management - making it optimal for new designs requiring upgradeable bandwidth without BGA complexity.
Availability
71V3579S75PFG8 is available at Aetrix Electronics and suitable for high-speed network packet buffering, DSP real-time data caching, and industrial PLC I/O mapping requiring stable component supply across extended product lifecycles.
Supply support for 71V3579S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577/79 family was designed specifically for high-bandwidth, low-latency memory subsystems in communications equipment and real-time embedded systems - emphasizing burst efficiency, flow-through timing predictability, and industrial reliability.
FAQ
What is the maximum clock frequency supported by the 71V3579S75PFG8?
The 71V3579S75PFG8 supports up to 117MHz clock frequency at 7.5ns access time under industrial temperature conditions (–40°C to +85°C). This is validated per Renesas datasheet AC Electrical Characteristics Table 6450 tbl 16, with tCYC minimum of 8.5ns. Operation above 117MHz is not guaranteed and may violate setup/hold timing margins.
Does the 71V3579S75PFG8 support both linear and interleaved burst modes?
Yes, the 71V3579S75PFG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst sequence is selected; when LBO = HIGH, interleaved burst is selected. The LBO pin is asynchronous and must remain static during operation per datasheet note in Table 6450 tbl 02.
What is the function of the ZZ pin on the 71V3579S75PFG8?
The ZZ pin on the 71V3579S75PFG8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to 35µA (industrial grade) while guaranteeing data retention. The pin has an internal pull-down, so it defaults to active mode if left unconnected - confirmed in Pin Definitions Table 6450 tbl 02.
Which byte write enables are implemented on the 71V3579S75PFG8?
The 71V3579S75PFG8 implements BW1 and BW2 for 9-bit byte control (I/O0–I/O8 and I/O9–I/O17 respectively), with BWE enabling them. BW3 and BW4 are explicitly not applicable per datasheet Note 1 in Pin Description Summary (page 3) and Truth Table 6450 tbl 12 - consistent with its 256K × 18 organization.
Is the 71V3579S75PFG8 compatible with 3.3V-only system designs?
Yes, the 71V3579S75PFG8 operates exclusively from 3.3V supplies: VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O. It does not require separate 2.5V or 1.8V rails, and all inputs are 3.3V-tolerant per VIH/VIL specifications in Table 6450 tbl 06 - simplifying power delivery in 3.3V-centric designs.
71V3579S75PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S75PFG8 FAQ
1.How can I place an order for 71V3579S75PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S75PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S75PFG8 reliable?
The price and inventory of 71V3579S75PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S75PFG8 is usually 5 days.
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71V3579S75PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S75PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S75PFG8?
For technical support, including 71V3579S75PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S75PFG8 requirements.
6.How does Aetrix verify that 71V3579S75PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3579S75PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S75PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3579S75PFG8?
All 71V3579S75PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S75PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S75PFG8 part is unused and in its original packaging.
Return procedure for 71V3579S75PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S75PFG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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