Renesas 71V3579S75PFGI

Overview

71V3579S75PFGI from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It serves as high-speed cache or buffer memory in network processors and telecom line cards requiring burst-mode data throughput.

For engineers reviewing the 71V3579S75PFGI datasheet, 71V3579S75PFGI pinout, 71V3579S75PFGI application, or 71V3579S75PFGI equivalent, key selection criteria include burst mode support (linear/interleaved via LBO), single-cycle deselect capability, 3.3V I/O compatibility, low-power sleep mode (ZZ input), and synchronous write control with byte-level granularity (BW1–BW2).

Technical Context

This SRAM implements a synchronous interface with clock-triggered address latching via ADSP/ADSC inputs and uses an internal binary burst counter to generate four consecutive addresses per burst cycle. The flow-through output path eliminates output register delay, enabling tCD = 7.5 ns clock-to-data timing without pipeline latency.

It supports dual chip-select logic (CS0 active-high, CS1 active-low) gated by CE, and provides asynchronous OE and ZZ controls for output enable and full sleep mode. Byte write enables BW1 and BW2 operate synchronously with CLK and BWE, while BW3/BW4 are not implemented in the 71V3579 variant.

Key Specifications

Pinout & Package

71V3579S75PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch, with exposed thermal pad (PFGI suffix denotes industrial-grade TQFP).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-75BZXI and AS7C3256B-75JCIN, the 71V3579S75PFGI delivers superior real-time determinism via flow-through outputs and burst addressing, while its ZZ sleep mode and industrial temp rating make it uniquely suited for embedded infrastructure requiring both performance and reliability.

Availability

71V3579S75PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V3579S75PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3579S75PFGI belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in networking, telecom, and real-time control systems.

FAQ

What memory organization does the 71V3579S75PFGI support?

The 71V3579S75PFGI is organized as 256K × 18 bits (4.608 Mbit), optimized for 18-bit-wide data buses common in DSPs and telecom ASICs. It does not support the 128K × 36 configuration - that variant is implemented in the 71V3577S family. Pinout and internal decoding are specific to the 256K × 18 layout, with A17 functional and BW3/BW4 unused.

Does the 71V3579S75PFGI support burst mode, and how is it configured?

Yes, the 71V3579S75PFGI supports four-word synchronous burst mode initiated by ADV = LOW. Burst order (linear or interleaved) is selected by the LBO pin: LBO = LOW enables linear addressing (00→01→10→11), while LBO = HIGH selects interleaved (00→01→11→10). LBO must remain static during operation and is sampled at power-up or reset.

What is the role of the ZZ pin on the 71V3579S75PFGI?

The ZZ pin on the 71V3579S75PFGI is an asynchronous input that places the device into full sleep mode when driven HIGH, reducing supply current to ≤35 µA (ISB2) while retaining data. Clock is internally gated, outputs go high-Z, and tZZR = 100 ns recovery time is required before valid reads resume. Internal pull-down ensures safe default state.

Which byte write enables are active on the 71V3579S75PFGI?

Only BW1 and BW2 are active on the 71V3579S75PFGI: BW1 controls I/O0–I/O8 and I/OP1 (lower 9-bit byte), BW2 controls I/O9–I/O15 and I/OP2 (upper 9-bit byte). BW3 and BW4 are not connected per Renesas documentation and must be left unconnected or tied to VSS; their presence in the 100-pin TQFP footprint is for family pin compatibility only.

Is the 71V3579S75PFGI compatible with commercial-grade 3.3V logic interfaces?

Yes, the 71V3579S75PFGI uses 3.3V core (VDD) and I/O (VDDQ) supplies with VIH = 2.0 V min and VIL = 0.8 V max, fully compatible with standard 3.3V CMOS and LVTTL logic families. Input thresholds meet JEDEC JESD8-15A, and DC parameters (VOH ≥ 2.4 V, VOL ≤ 0.4 V at IOL = 8 mA) ensure robust noise margins in dense PCB layouts.