My Inquiry
My Account
Renesas 71V3579S75PFGI8
- Part No.:
- 71V3579S75PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S75PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,873
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3579S75PFGI8 from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, industrial temperature range (–40°C to +85°C), and TQFP-100 package. It supports burst read/write operations, single-cycle deselect, and low-power sleep mode via ZZ input - deployed in high-speed networking buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V3579S75PFGI8 datasheet, 71V3579S75PFGI8 pinout, 71V3579S75PFGI8 application, or 71V3579S75PFGI8 equivalent, key selection criteria include burst mode timing compliance (LBO-controlled linear/interleaved sequences), flow-through output latency, 3.3V I/O compatibility with LVTTL/LVCMOS interfaces, and industrial-grade power-down current (IZZ ≤ 35 µA).
Technical Context
This SRAM implements a synchronous interface with registered address/data inputs, unregistered (flow-through) outputs, and a 4-word burst counter driven by ADV and LBO. The internal architecture separates write register staging from output path logic, eliminating output pipeline delay - enabling deterministic tCD = 7.5 ns clock-to-data timing under industrial conditions.
It supports three write control modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2 only; BW3/BW4 are not applicable per datasheet note). Chip select is hierarchical (CE + CS0/CS1), and ADSP/ADSC provide processor/cache address status signaling for seamless integration into cache-coherent systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.608 Mbit); no 128K × 36 configuration supported on this variant |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp ranges) |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains enable noise isolation |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static configuration |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB2 = 85–100 mA with clock running but deselected |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and frequency envelope |
| Output Architecture | Flow-through (no output register); tCLZ = 0 ns, tCHZ = 2–3.5 ns - critical for zero-latency read forwarding |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin mapping validated for 256K × 18 configuration per Renesas datasheet revision 6.42 (pages 6–7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A1 used by burst counter for 4-word sequence generation |
| CLK | Clock Input | Single-ended system clock; all synchronous inputs timed to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy: CE active LOW, CS0 active HIGH, CS1 active LOW - enables multi-chip decode |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst (single-word mode) |
| LBO | Linear/Interleaved Burst Order | Asynchronous static input; defines burst address sequence (linear vs. interleaved); must remain stable during operation |
| GW, BWE, BW1–BW2 | Write Controls | GW writes all 18-bit words; BWE gates BW1/BW2; BW3/BW4 are NC for 71V3579S (per datasheet note) |
| OE | Output Enable | Asynchronous; enables/disables I/O drivers independently of clock - supports partial bus sharing |
| ZZ | Sleep Mode | Asynchronous HIGH activates full sleep; internal CLK gating; data retention guaranteed; internal pull-down |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; synchronous input registration; flow-through output path; VDDQ-referenced I/O |
| VDD, VDDQ, VSS | Power/Ground | Dual-supply: VDD (core), VDDQ (I/O); multiple VSS pins distributed for EMI reduction and impedance control |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = tCLZ = 0 ns clock-to-output activation - essential for real-time loop buffering |
| Single-cycle deselect | Chip deactivation completes within one clock cycle (no residual access or bus contention after CS deassertion) |
| Configurable 4-word burst mode | LBO pin selects linear or interleaved addressing; burst counter advances automatically on ADV assertion - reduces address bus traffic by 75% |
| Industrial-grade low-power sleep | IZZ ≤ 35 µA at VDD = max; ZZ input requires no external pull-up; retains full memory content during sleep |
| Byte-selectable write control | BW1 controls I/O0–I/O8 + I/OP1; BW2 controls I/O9–I/O17 + I/OP2; enables partial-word updates without read-modify-write |
Applications
| Network Packet Buffering | DSP Real-Time Data Cache |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller and switch fabric. Use Value: 7.5 ns tCD and flow-through outputs ensure sub-10 ns read turnaround; burst mode delivers four consecutive frame headers in one address cycle. |
Use Scenario: Holding coefficient tables and intermediate FFT results in radar signal processors operating at >100 MSPS. IC Role / Device Role / Timing Role: On-chip memory extension for fixed-point DSP cores requiring deterministic access timing and burst-aligned data fetch. Use Value: Linear burst mode (LBO = LOW) provides sequential coefficient streaming; single-cycle deselect prevents pipeline stalls during context switches. |
| Industrial PLC I/O Mapping Memory | Medical Imaging Frame Store |
|
Use Scenario: Maintaining real-time I/O state maps for modular automation controllers with hot-swap I/O modules. IC Role / Device Role / Timing Role: Non-volatile shadow RAM (paired with backup supply) storing synchronized digital I/O states across 16+ modules. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode (35 µA) enable reliable operation in uncooled control cabinets with power-loss resilience. |
Use Scenario: Temporary storage of uncompressed 12-bit ultrasound or MRI pixel data during beamforming preprocessing. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via OE-controlled tristate) shared between acquisition ADC and processing FPGA. Use Value: Separate VDD/VDDQ supplies isolate analog-sensitive core logic from noisy I/O switching; 100-pin TQFP allows controlled-impedance PCB routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 256K × 18, 7 ns, 144-ball FBGA; no LBO pin - fixed interleaved burst only | Lacks configurable burst order; FBGA footprint incompatible with TQFP layout | Select when board space is constrained and burst sequence is fixed; verify ADV timing compatibility |
| AS7C3256A-7TCN | 256K × 18, 7 ns, 44-pin SOJ; asynchronous interface; no burst counter or ADV/LBO | No burst capability; higher access latency due to async control; no flow-through output | Choose only for legacy async designs where clock domain bridging is already implemented |
Compared with CY7C1371DV33-7BBXC and AS7C3256A-7TCN, the 71V3579S75PFGI8 uniquely combines industrial temperature support, programmable burst sequencing (LBO), and flow-through output timing - making it optimal for new designs requiring deterministic latency and flexible memory access patterns.
Availability
71V3579S75PFGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, medical imaging, and real-time signal processing applications requiring stable component supply and long-term lifecycle assurance.
Supply support for 71V3579S75PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise markets.
The 71V3579S75PFGI8 belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in real-time embedded systems demanding industrial reliability and precise timing control.
FAQ
What is the maximum operating frequency of the 71V3579S75PFGI8?
The 71V3579S75PFGI8 supports up to 117 MHz clock frequency with 7.5 ns access time across both commercial and industrial temperature ranges. This speed is guaranteed under VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%, and –40°C to +85°C ambient conditions - verified per Renesas AC Electrical Characteristics Table 16.
Does the 71V3579S75PFGI8 support both 128K × 36 and 256K × 18 configurations?
No - the 71V3579S75PFGI8 is exclusively configured as 256K × 18 (4.608 Mbit). The 128K × 36 organization is supported only by the 71V3577S family members. Pinouts differ: 71V3579S omits BW3/BW4 and reassigns several address pins (e.g., A16/A17 usage), as confirmed in Renesas Pin Configuration diagrams (pages 6–7).
How does the LBO pin affect burst behavior in the 71V3579S75PFGI8?
The LBO pin selects burst address order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It is an asynchronous static input - must be stable before and during burst operation. Changing LBO mid-burst causes undefined behavior, per Renesas datasheet Section 6.42, Table 14/15.
What is the power consumption of the 71V3579S75PFGI8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3579S75PFGI8 draws ≤35 µA at maximum VDD, as specified in DC Electrical Characteristics Table 09a. This current ensures full data retention and enables rapid wake-up (<100 ns tZZR) without initialization overhead - critical for energy-constrained industrial systems.
Is the 71V3579S75PFGI8 pin-compatible with other devices in the 71V3577/79 family?
The 71V3579S75PFGI8 shares the same 100-pin TQFP footprint and core pinout with 71V3577S variants, but is not functionally pin-compatible due to disabled BW3/BW4 pins and different address pin assignments (e.g., A16/A17 usage in 256K×18 mode). Board-level reuse requires validation against Renesas Pin Configuration drawings for PKG100.
71V3579S75PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S75PFGI8 FAQ
1.How can I place an order for 71V3579S75PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S75PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S75PFGI8 reliable?
The price and inventory of 71V3579S75PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S75PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3579S75PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S75PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3579S75PFGI8?
71V3579S75PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S75PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S75PFGI8?
For technical support, including 71V3579S75PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S75PFGI8 requirements.
6.How does Aetrix verify that 71V3579S75PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3579S75PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S75PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3579S75PFGI8?
All 71V3579S75PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S75PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S75PFGI8 part is unused and in its original packaging.
Return procedure for 71V3579S75PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S75PFGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
