My Inquiry
My Account
Renesas 71V3579S80PFG8
- Part No.:
- 71V3579S80PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S80PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,074
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3579S80PFG8 from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz, burst counter support, and single-cycle deselect. It operates across industrial temperature (–40°C to +85°C) and is packaged in a 100-pin TQFP for high-density memory buffering in network packet processors.
For engineers reviewing the 71V3579S80PFG8 datasheet, 71V3579S80PFG8 pinout, 71V3579S80PFG8 application, or 71V3579S80PFG8 equivalent, key selection criteria include burst mode configuration (LBO), byte-write granularity (BW1–BW2 only), flow-through timing constraints, and industrial-grade power-down behavior (ZZ input).
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs-enabling deterministic tCD timing without output register latency. Burst addressing is controlled by ADV, ADSP/ADSC status signals, and LBO-selectable linear/interleaved sequences.
Write operations support global (GW) or byte-level (BW1–BW2) control with self-timed internal write cycles; CE/CS0/CS1 decoding enables multi-chip select hierarchies. Power management includes active standby (ISB1), clock-running standby (ISB2), and full sleep mode (IZZ ≤ 35 mA) via asynchronous ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.608 Mbit); no BW3/BW4 pins per datasheet note |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - guaranteed for commercial & industrial temp ranges |
| Core & I/O Voltage | 3.3 V ±5% (VDD and VDDQ) - requires separate low-noise 3.3V supplies |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence |
| Power-Down Current | IZZ ≤ 35 µA in full sleep mode (ZZ = HIGH) - retains data at –40°C to +85°C |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems with thermal cycling |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - RoHS-compliant, lead-free |
Pinout & Package
71V3579S80PFG8 is housed in a 100-pin thin quad flatpack (TQFP) with 0.5 mm pitch, 14 mm × 20 mm body, and exposed thermal pad (not electrically connected). Pin 1 marked by corner cut; pin 14 accepts <0.8 V (VIL) but need not be tied to VSS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; A0–A1 used for burst counter LSBs in 256K×18 mode |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device |
| GW, BWE, BW1–BW2 | Write Controls | GW writes all 18-bit words; BWE enables BW1/BW2; BW1/BW2 each control 9-bit byte |
| ADV, ADSP, ADSC | Burst Address Control | ADSP/ADSC load address register; ADV advances internal burst counter on rising CLK |
| LBO, ZZ | Configuration / Sleep | LBO sets burst order (static, must not toggle during operation); ZZ = HIGH forces sleep mode |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; flow-through outputs - no output register delay |
| VDD, VDDQ, VSS | Power Supplies | VDD = 3.3V core; VDDQ = 3.3V I/O; multiple VSS pins required for noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.0 ns directly from CLK edge to valid data |
| Single-cycle deselect | Device enters high-Z state within one clock cycle after chip disable - critical for bus arbitration |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst - matches cache line fetch patterns |
| Byte-write enable (BW1/BW2) | Independent 9-bit write control - enables partial-word updates without read-modify-write |
| Industrial temperature support | Full functionality and data retention from –40°C to +85°C - validated for telecom infrastructure |
Applications
| Packet Buffering in Switch ASICs | Cache Tag Storage in RISC-V Cores |
|---|---|
Use Scenario: High-speed Ethernet switch ASICs require low-latency, burst-capable memory to buffer ingress/egress packet headers and metadata. IC Role / Device Role / Timing Role: 71V3579S80PFG8 serves as a 100 MHz synchronous packet descriptor buffer with flow-through timing enabling sub-10 ns read turnaround. Use Value: 8.0 ns tCD and single-cycle deselect reduce header processing latency by ≥15% vs. registered-output SRAMs in pipeline-constrained designs. | Use Scenario: RISC-V-based microcontrollers use fast SRAM for tag storage in 2-way set-associative instruction caches. IC Role / Device Role / Timing Role: 71V3579S80PFG8 provides 256K×18-bit tag RAM with burst reads aligned to 4-word cache lines. Use Value: LBO-selectable burst order allows matching of tag fetch pattern to processor's prefetch engine - eliminating burst misalignment penalties. |
| Industrial PLC I/O Module Memory | Medical Imaging Data FIFO |
Use Scenario: Programmable logic controllers require deterministic, temperature-stable memory for real-time I/O mapping tables and motion control buffers. IC Role / Device Role / Timing Role: 71V3579S80PFG8 acts as a dual-port-accessible scratchpad with industrial-grade data retention (–40°C to +85°C). Use Value: ZZ-controlled sleep mode reduces idle power to ≤35 µA - extending uptime in battery-backed PLC modules. | Use Scenario: Ultrasound and MRI front-end systems buffer time-critical ADC samples before DSP processing. IC Role / Device Role / Timing Role: 71V3579S80PFG8 functions as a 100 MHz flow-through FIFO with burst writes synchronized to ADC frame clocks. Use Value: Self-timed GW/BW writes eliminate external write strobe generation - simplifying timing closure in mixed-signal PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375DV33-100AXC | 256K × 18-bit, 100 MHz, 3.3V; uses registered outputs (tCD = 10 ns), no LBO pin | Lacks configurable burst order; requires external burst sequencing logic | Choose when system-level burst control is handled externally and output register latency is acceptable |
| AS7C3256B-10JIN | 256K × 16-bit, 100 MHz, 3.3V; flow-through outputs, no burst counter or ADV/ADSP interface | Basic async/sync SRAM - no burst addressing; limited to single-word random access | Choose for cost-sensitive applications where burst capability is unnecessary and 16-bit width suffices |
Compared with CY7C1375DV33-100AXC and AS7C3256B-10JIN, the 71V3579S80PFG8 uniquely delivers flow-through timing *with* hardware-configurable burst addressing - reducing FPGA logic overhead and improving cache-line efficiency in real-time embedded systems.
Availability
71V3579S80PFG8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom packet processors, medical imaging subsystems, and RISC-V-based edge AI accelerators requiring stable component supply across extended temperature and long production lifecycles.
Supply support for 71V3579S80PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577/79 family was designed specifically for high-bandwidth, low-latency buffering in networking, communications, and real-time control systems - emphasizing burst efficiency, flow-through determinism, and industrial reliability.
FAQ
What is the maximum operating frequency supported by the 71V3579S80PFG8?
The 71V3579S80PFG8 supports up to 100 MHz clock frequency with an 8.0 ns access time, validated across both commercial and industrial temperature ranges. This speed is guaranteed for the 100-pin TQFP package; faster 6.5 ns operation is restricted to commercial-grade TQFP variants only.
Does the 71V3579S80PFG8 support burst mode, and how is it configured?
Yes, the 71V3579S80PFG8 supports 4-word burst mode via ADV, ADSP/ADSC, and LBO inputs. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) addressing; ADV advances the internal counter on rising CLK edges. Burst operation is fully synchronous and requires no external sequencing logic.
How many byte-write enable pins does the 71V3579S80PFG8 have, and what do they control?
The 71V3579S80PFG8 has two byte-write enable pins: BW1 and BW2. Per datasheet note, BW3 and BW4 are not applicable. BW1 controls I/O0–I/O8 and I/OP1 (9 bits); BW2 controls I/O9–I/O17 and I/OP2 (9 bits), enabling independent 9-bit word writes without affecting other bytes.
What is the purpose of the ZZ pin on the 71V3579S80PFG8, and what happens when it is asserted?
The ZZ pin on the 71V3579S80PFG8 is an asynchronous sleep mode input. When ZZ is driven HIGH, the internal clock is gated and the device enters full sleep mode with IZZ ≤ 35 µA, while retaining stored data across the full industrial temperature range (–40°C to +85°C).
Is the 71V3579S80PFG8 pin-compatible with the 71V3577S80PFG8?
No - the 71V3579S80PFG8 (256K × 18) and 71V3577S80PFG8 (128K × 36) differ in memory organization, pin function allocation (e.g., A16 vs. A17, NC placements), and byte-write pin count (BW1–BW2 only vs. BW1–BW4). They share the same 100-pin TQFP footprint but are not functionally or pin-compatible replacements.
71V3579S80PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S80PFG8 FAQ
1.How can I place an order for 71V3579S80PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S80PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S80PFG8 reliable?
The price and inventory of 71V3579S80PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S80PFG8 is usually 5 days.
3.What payment methods are accepted for 71V3579S80PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S80PFG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3579S80PFG8?
71V3579S80PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S80PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S80PFG8?
For technical support, including 71V3579S80PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S80PFG8 requirements.
6.How does Aetrix verify that 71V3579S80PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3579S80PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S80PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3579S80PFG8?
All 71V3579S80PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S80PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S80PFG8 part is unused and in its original packaging.
Return procedure for 71V3579S80PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S80PFG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
