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Renesas 71V3579S80PFGI
- Part No.:
- 71V3579S80PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S80PFGI.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3579S80PFGI from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports burst counter mode, single-cycle deselect, and linear/interleaved burst ordering via LBO pin - deployed in high-speed networking packet buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V3579S80PFGI datasheet, 71V3579S80PFGI pinout, 71V3579S80PFGI application, or 71V3579S80PFGI equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, ZZ-controlled sleep mode current (≤35 µA), and TQFP-100 pin compatibility with legacy 71V3577/79 footprint designs.
Technical Context
The 71V3579S80PFGI implements a synchronous, clock-driven interface with registered address/data inputs and flow-through (unregistered) outputs - eliminating output register latency for deterministic read-to-data timing. Its internal burst address counter advances on ADV=LOW, generating four sequential addresses per initial address latch, with order determined by static LBO pin state.
Write control uses hierarchical enable logic: GW (global write) overrides BWE (byte write enable), which in turn gates BW1–BW4 (individual byte enables). For the 71V3579S80PFGI variant, BW3 and BW4 are not applicable per datasheet Note 1, confirming its 256K × 18 organization maps to two 9-bit byte lanes (BW1/BW2 only).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18 bits - provides 4.5 Mbit capacity with dual 9-bit byte granularity for 16-/18-bit bus systems. |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - guarantees sub-10 ns read cycle timing under industrial conditions, enabling tight timing budgets in FPGA-attached memory interfaces. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - separate core/I/O rails allow independent noise management and compatibility with 3.3V logic families. |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including base station RF modules and motor control drives. |
| Power Consumption | ISB1 ≤ 35 mA (standby), IZZ ≤ 35 µA (sleep) - low quiescent current supports power-gated subsystems without data loss. |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin - eliminates external address sequencing logic and reduces bus arbitration overhead in cache-coherent systems. |
| Output Architecture | Flow-through (no output register) - delivers first valid data on same clock edge as address latch, critical for zero-wait-state CPU interfaces. |
Pinout & Package
71V3579S80PFGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 identifier is marked by a corner notch; pin 64 (ZZ) may be left unconnected for permanent active mode operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A1 select burst word within 4-word sequence, A2–A17 define base row/column. |
| CLK | Clock Input | Single-phase edge-triggered master clock; all synchronous inputs sampled on rising edge. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode (CE LOW + CS0 HIGH + CS1 LOW) enables device; supports multi-chip memory banks. |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst, retaining current address. |
| LBO | Linear/Interleaved Burst Order | Static DC input: LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10); must remain stable during operation. |
| GW, BWE, BW1–BW2 | Write Control | GW writes all 18 bits; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - BW3/BW4 unused per datasheet. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; synchronous input path, flow-through output path - no output register delay. |
| ZZ | Sleep Mode | Asynchronous HIGH input gates internal clock and reduces ICC to ≤35 µA; retains data; internal pull-down. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.0 ns max ensures first data appears on same clock cycle as address latch, enabling zero-wait-state CPU access. |
| Single-cycle deselect | Device enters high-impedance state within one CLK cycle after CE/CS deassertion - prevents bus contention during rapid bank switching. |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequence - matches cache line layouts in ARM Cortex-A/R or PowerPC-based SoCs. |
| Separate VDD/VDDQ supplies | Independent core (3.3V) and I/O (3.3V) rails reduce switching noise coupling and support mixed-voltage system integration. |
| Industrial temperature qualification | Guaranteed operation from –40°C to +85°C with full AC/DC specs - validated for deployment in outdoor telecom equipment and factory automation controllers. |
Applications
| Networking Packet Buffer | DSP Real-Time Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with line-rate forwarding requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switch fabric; provides burst-aligned 18-bit data transfers synchronized to 100 MHz system clock. Use Value: 8.0 ns tCD and flow-through outputs meet sub-10 ns timing closure for 1 Gbps+ packet processing without pipeline stalls. | Use Scenario: Holding coefficient tables and intermediate results in radar signal processors using TI C6000 or Analog Devices SHARC DSPs. IC Role / Device Role / Timing Role: External program/data memory with burst fetch capability; LBO-configured interleaved mode aligns with DSP cache line stride. Use Value: Single-cycle deselect and 256K × 18 organization enable seamless context switching between multiple radar beam-forming algorithms. |
| Industrial PLC Data Log | Medical Imaging Frame Store |
Use Scenario: Capturing sensor history and motion control trajectories in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile-backed RAM buffer; ZZ sleep mode reduces power during idle cycles while retaining data across 100k+ write cycles. Use Value: Industrial temp rating (–40°C to +85°C) and ISB1 ≤ 35 mA standby current ensure reliable logging in uncooled control cabinets. | Use Scenario: Temporary storage of ultrasound or MRI scan lines prior to FFT processing in portable diagnostic devices. IC Role / Device Role / Timing Role: High-speed frame buffer interfacing to FPGA image pipelines; 100-pin TQFP footprint simplifies layout in space-constrained handheld enclosures. Use Value: TQFP-100 package with 0.5 mm pitch allows dense routing while maintaining signal integrity for 100 MHz burst reads across 18-bit parallel bus. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80PFGI | 128K × 36 organization; supports BW3/BW4; identical timing, package, and feature set. | Targets 32-/36-bit bus systems requiring wider data path; not pin-compatible due to different byte-enable mapping and I/O pin assignments. | Select 71V3577S80PFGI only when 36-bit interface and full 4-byte write granularity are required - verify BW3/BW4 pin usage and I/O lane allocation. |
| CY7C1315KV18-100BZI | Cypress (Infineon) 256K × 18 SRAM; 100 MHz, 100-pin TQFP; supports JTAG boundary scan but lacks ADV/LBO burst control. | Requires external logic for burst address generation; no hardware-configurable burst order - limits use in cache-coherent or low-overhead DMA systems. | Choose CY7C1315KV18-100BZI only if JTAG testability is mandatory and burst sequencing can be handled by controller firmware or external logic. |
Compared with 71V3577S80PFGI, the 71V3579S80PFGI offers narrower 18-bit data width optimized for cost-sensitive 16-bit buses, while the CY7C1315KV18-100BZI trades integrated burst logic for testability - making 71V3579S80PFGI the optimal choice for deterministic, low-latency burst memory in industrial DSP and networking.
Availability
71V3579S80PFGI is available at Aetrix Electronics and suitable for networking packet buffers, DSP real-time memory, industrial PLC data loggers, and medical imaging frame stores requiring stable component supply across extended product lifecycles.
Supply support for 71V3579S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3579S80PFGI belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in real-time communication and signal processing equipment.
FAQ
What memory organization does the 71V3579S80PFGI implement?
The 71V3579S80PFGI implements a 256K × 18-bit synchronous SRAM organization, providing 4.5 Mbit total capacity with two 9-bit byte lanes (BW1 and BW2). Unlike the 71V3577S variant, BW3 and BW4 are not applicable per Renesas datasheet Note 1, confirming its dedicated 18-bit data path optimized for 16-/18-bit bus architectures.
Does the 71V3579S80PFGI support both linear and interleaved burst modes?
Yes, the 71V3579S80PFGI supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the burst follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). The LBO pin is static and must not change state during active operation, as confirmed in the Pin Definitions table.
What is the maximum clock frequency supported by the 71V3579S80PFGI at 8.0 ns access time?
The 71V3579S80PFGI supports up to 100 MHz clock frequency at 8.0 ns access time, as specified in the "Supports fast access times" section for commercial and industrial temperature ranges. This timing is guaranteed across the full industrial range (–40°C to +85°C) and applies to the 100-pin TQFP package, matching the PFGI suffix designation.
How does the ZZ pin function in the 71V3579S80PFGI?
The ZZ pin on the 71V3579S80PFGI is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 µA (IZZ) while guaranteeing data retention. The pin has an internal pull-down, so leaving it unconnected maintains active mode - a design choice explicitly noted for pin 64 in the 100-pin TQFP configuration diagrams.
Is the 71V3579S80PFGI pin-compatible with other members of the 71V3577/79 family?
The 71V3579S80PFGI shares the same 100-pin TQFP package and core pinout with the 71V3577S series, but is not fully pin-compatible due to functional differences: BW3/BW4 pins are No Connect (NC) on 71V3579S80PFGI, whereas they are active on 71V3577S variants. Layout reuse is possible only when NC pins are left unconnected or tied per design requirements.
71V3579S80PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S80PFGI FAQ
1.How can I place an order for 71V3579S80PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S80PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S80PFGI reliable?
The price and inventory of 71V3579S80PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S80PFGI is usually 5 days.
3.What payment methods are accepted for 71V3579S80PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S80PFGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3579S80PFGI?
71V3579S80PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S80PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S80PFGI?
For technical support, including 71V3579S80PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S80PFGI requirements.
6.How does Aetrix verify that 71V3579S80PFGI is sourced from the original manufacturer or authorized distributors?
All 71V3579S80PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S80PFGI meets industry standards.
7.What is the process for return or replacement of 71V3579S80PFGI?
All 71V3579S80PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S80PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S80PFGI part is unused and in its original packaging.
Return procedure for 71V3579S80PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S80PFGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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AT24C08C-STUM-T
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