Renesas 71V3579S80PFGI8

Overview

71V3579S80PFGI8 from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports burst counter mode, single-cycle deselect, and linear/interleaved burst ordering via LBO pin - deployed in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V3579S80PFGI8 datasheet, 71V3579S80PFGI8 pinout, 71V3579S80PFGI8 application, or 71V3579S80PFGI8 equivalent, key selection criteria include its 256K × 18 organization, 8.0 ns tCD timing, TQFP-100 industrial-grade packaging, asynchronous ZZ sleep control, and absence of BW3/BW4 pins per datasheet note.

Technical Context

The 71V3579S80PFGI8 implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling deterministic read latency directly tied to tCD. Its burst logic uses an internal binary counter synchronized to ADV and gated by ADSP/ADSC, with burst order determined statically by LBO level before operation.

Write control combines global (GW) and byte-level (BW1–BW2) enables, where BWE gates BWx signals; GW supersedes all byte writes. Power management includes three states: active (IDD = 180 mA max), standby (ISB1 = 30 mA), and full sleep (IZZ = 30 mA), all controlled asynchronously via ZZ.

Key Specifications

Pinout & Package

71V3579S80PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant. Pinout reflects the 256K × 18 configuration: BW3 and BW4 are not connected (NC), and A17 is active while A16 is NC in this variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3577S80PFGI8, the 71V3579S80PFGI8 trades 36-bit width and extra byte enables for optimized 18-bit alignment and reduced pin count; versus AS7C3256B-8TIN, it delivers deterministic burst timing and lower latency through synchronous flow-through architecture - essential for real-time control and telecom buffering.

Availability

71V3579S80PFGI8 is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, and avionics data acquisition requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V3579S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for deterministic low-latency memory in real-time networking, control, and signal processing systems.

FAQ

What memory organization does the 71V3579S80PFGI8 implement?

The 71V3579S80PFGI8 implements a 256K × 18-bit synchronous SRAM organization, providing 4.608 Mbit total capacity with an 18-bit data bus. This configuration is distinct from the 128K × 36 variant (71V3577S) and omits BW3/BW4 pins - confirmed in Renesas datasheet section "Pin Configuration – 256K x 18, PKG100".

Does the 71V3579S80PFGI8 support burst mode, and how is it configured?

Yes, the 71V3579S80PFGI8 supports 4-word synchronous burst mode using an internal binary counter. Burst initiation is triggered by ADV LOW, and the sequence order (linear or interleaved) is selected statically via the LBO pin - LBO LOW = linear, LBO HIGH = interleaved. This is documented in the "Linear Burst Sequence Table" and "Interleaved Burst Sequence Table" of the datasheet.

What is the significance of the "80" in 71V3579S80PFGI8?

The "80" in 71V3579S80PFGI8 denotes the 8.0 ns access time (tCD) specification - the maximum clock-to-data delay under industrial temperature conditions at 100 MHz operation. This speed grade is validated in the "AC Electrical Characteristics" table (tCD = 8.0 ns max) and applies to both commercial and industrial versions of the 71V3579S.

How does power management work on the 71V3579S80PFGI8?

Power management on the 71V3579S80PFGI8 operates across three states: active (IDD ≤ 180 mA), standby (ISB1 ≤ 30 mA), and full sleep (IZZ ≤ 30 mA). The asynchronous ZZ input controls entry into sleep mode - asserting ZZ HIGH immediately gates the internal clock and reduces current draw while retaining memory contents, as specified in the DC Electrical Characteristics table.

Is the 71V3579S80PFGI8 pin-compatible with other members of the 71V3577/79 family?

No - the 71V3579S80PFGI8 is not fully pin-compatible with the 71V3577S80PFGI8. While both use the same 100-pin TQFP package, the 71V3579S configures A17 as active and A16 as NC, whereas the 71V3577S uses A16 and leaves A17 NC. Additionally, BW3 and BW4 are NC on the 71V3579S but functional on the 71V3577S - verified in the "Pin Configuration" diagrams for each variant.