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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3579S85PFG

Name: 71V3579S85PFG
Brand: Renesas
SKU: 71V3579S85PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3579S85PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3579S85PFG.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V3579S85PFG from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.5ns access time at 87MHz, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports burst counter operation, single-cycle deselect, and linear/interleaved burst modes via LBO pin - deployed in high-speed networking packet buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V3579S85PFG datasheet, 71V3579S85PFG pinout, 71V3579S85PFG application, or 71V3579S85PFG equivalent, key selection criteria include its 256K × 18 organization, 8.5ns tCD timing, asynchronous ZZ sleep control, synchronous burst address advance (ADV), and absence of BW3/BW4 pins per device-specific pin mapping.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address/data inputs and flow-through (unregistered) outputs - enabling deterministic tCD timing without output register latency. Its internal burst counter advances on ADV=LOW, generating four sequential addresses per initial address, with order determined by static LBO pin state (linear vs. interleaved).

Write operations support global (GW) or byte-selective (BW1–BW2 only; BW3/BW4 not applicable per datasheet note) control, with self-timed write cycles gated by CE, CS0/CS1, and ADSP/ADSC status signals. Power management includes CMOS standby (ISB1), clock-running standby (ISB2), and full sleep mode (IZZ ≤ 35mA) activated by ZZ HIGH.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 18-bit (4.6 Mbit); configured as 18-bit data bus with A0–A17 addressing - matches 16-bit processor data paths with parity or dual-16-bit alignment.
Access Time (tCD)	8.5 ns max at 87 MHz clock; guarantees valid data on rising CLK edge after 8.5 ns - enables tight timing closure in 87 MHz synchronous systems.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage domain isolation and noise margin optimization.
Operating Temperature	–40°C to +85°C industrial grade; validated for continuous operation in base station RF modules and industrial PLC controllers.
Power Consumption	IZZ ≤ 35 µA in full sleep mode (ZZ HIGH); reduces system standby power in battery-backed or energy-sensitive applications.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence; static configuration prevents runtime mode switching - simplifies cache controller integration.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles and automated optical inspection.

Pinout & Package

71V3579S85PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch, with exposed thermal pad (not electrically connected). Pin 1 marked by corner notch; top-side marking includes "71V3579S85PFG" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous 18-bit address bus; latched on rising CLK edge when ADSP/ADSC active - supports 256K depth addressing.
CE, CS0, CS1	Chip Enable / Selects	Three-level chip select hierarchy (CE LOW + CS0 HIGH + CS1 LOW enables device); allows multi-SRAM bank decoding.
ADV	Burst Address Advance	Synchronous input that increments internal burst counter on LOW; HIGH suspends burst - enables precise burst termination control.
LBO	Linear/Interleaved Burst Order	Asynchronous static input (LOW = linear, HIGH = interleaved); must remain stable during operation - defines burst address sequence topology.
GW, BWE, BW1–BW2	Write Controls	GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - no BW3/BW4 functionality per datasheet.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus with 2 parity bits; flow-through outputs eliminate output register delay - critical for low-latency read cycles.
ZZ	Sleep Mode Input	Asynchronous HIGH activates full sleep mode; internally pulled down - enables instant power-down without clock gating logic.
VDD, VDDQ, VSS	Power/Ground	Dual 3.3V supplies (core/I/O) with 12 dedicated VSS pins; ensures stable rail integrity under burst read/write current transients.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay, delivering data within 8.5 ns of CLK rise - essential for sub-10 ns timing-critical datapaths.
Single-cycle deselect	Device enters high-Z state within one clock cycle after chip disable - prevents bus contention during rapid bank switching.
Configurable burst order (LBO)	Hardware-selectable linear or interleaved 4-word burst sequences - aligns with MIPS/PowerPC cache line layouts or custom DMA engines.
Self-timed write cycle	Internal timing logic resolves write completion without external strobes - simplifies interface design and reduces PCB routing complexity.
Industrial temperature support	Guaranteed operation from –40°C to +85°C with validated IDD/ISB/IZZ specs - suitable for uncontrolled ambient deployments.

Applications

Networking Packet Buffer	DSP Real-Time Memory
Use Scenario: Storing incoming Ethernet frames in a 10G line card before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfaced to a network processor's synchronous bus. Use Value: 8.5 ns tCD and burst capability deliver sustained 87 MT/s throughput, reducing frame queuing latency by >30% vs. asynchronous SRAM.	Use Scenario: Holding coefficient tables and intermediate results in a radar signal processing chain. IC Role / Device Role / Timing Role: Dual-port-accessible memory bank synchronized to DSP core clock for zero-wait-state execution. Use Value: Flow-through outputs and single-cycle deselect enable deterministic 87 MHz read-modify-write cycles - critical for <1 µs loop timing.
Industrial PLC Data Log	Medical Imaging Frame Store
Use Scenario: Capturing sensor history in a programmable logic controller with deterministic scan cycle timing. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding timestamped analog input samples between SD card writes. Use Value: ZZ-controlled sleep mode draws ≤35 µA during idle intervals - extends battery life in remote, maintenance-free installations.	Use Scenario: Temporary storage of reconstructed CT/MRI slices prior to GPU rendering or DICOM export. IC Role / Device Role / Timing Role: High-reliability, radiation-tolerant memory buffer operating continuously in diagnostic imaging chassis. Use Value: Industrial temp rating and separate VDD/VDDQ rails ensure stable 18-bit pixel data integrity across thermal cycling in medical enclosures.

Networking Packet Buffer

DSP Real-Time Memory

Use Scenario: Storing incoming Ethernet frames in a 10G line card before classification and forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfaced to a network processor's synchronous bus.

Use Value: 8.5 ns tCD and burst capability deliver sustained 87 MT/s throughput, reducing frame queuing latency by >30% vs. asynchronous SRAM.

Use Scenario: Holding coefficient tables and intermediate results in a radar signal processing chain.

IC Role / Device Role / Timing Role: Dual-port-accessible memory bank synchronized to DSP core clock for zero-wait-state execution.

Use Value: Flow-through outputs and single-cycle deselect enable deterministic 87 MHz read-modify-write cycles - critical for <1 µs loop timing.

Industrial PLC Data Log

Medical Imaging Frame Store

Use Scenario: Capturing sensor history in a programmable logic controller with deterministic scan cycle timing.

IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding timestamped analog input samples between SD card writes.

Use Value: ZZ-controlled sleep mode draws ≤35 µA during idle intervals - extends battery life in remote, maintenance-free installations.

Use Scenario: Temporary storage of reconstructed CT/MRI slices prior to GPU rendering or DICOM export.

IC Role / Device Role / Timing Role: High-reliability, radiation-tolerant memory buffer operating continuously in diagnostic imaging chassis.

Use Value: Industrial temp rating and separate VDD/VDDQ rails ensure stable 18-bit pixel data integrity across thermal cycling in medical enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-8BGXI	256K × 18, 8 ns access, 119-ball BGA only; no TQFP option; requires external termination resistors.	Targeted at space-constrained BGA-only designs; lacks pin-compatible TQFP migration path.	Select when board area is primary constraint and BGA assembly is available.
AS7C3256B-8TIN	256K × 18, 8 ns access, 100-pin TQFP; commercial temp only (0°C to +70°C); no ZZ sleep mode.	Suitable for cost-sensitive consumer electronics; unsuitable for industrial thermal environments.	Select for non-industrial applications where sleep mode and extended temperature are unnecessary.

Compared with CY7C1371DV33-8BGXI and AS7C3256B-8TIN, the 71V3579S85PFG uniquely combines industrial temperature support, TQFP packaging, ZZ sleep control, and confirmed BW1/BW2-only pin compatibility - making it the only drop-in solution for legacy 100-pin TQFP-based industrial designs requiring guaranteed -40°C operation.

Availability

71V3579S85PFG is available at Aetrix Electronics and suitable for networking packet buffers, DSP real-time memory, industrial PLC data logs, medical imaging frame stores, and telecom baseband processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3579S85PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for deterministic low-latency memory access in real-time communication and signal processing systems.

FAQ

What memory organization does the 71V3579S85PFG support?

The 71V3579S85PFG is organized as 256K × 18 bits (4.6 Mbit), with address inputs A0–A17 and 18-bit data I/O lines (I/O0–I/O17 plus I/OP1–I/OP2). This configuration maps directly to 16-bit processor buses with optional parity or dual-16-bit alignment, and is distinct from the 128K × 36 variant in the same family. The 71V3579S85PFG does not support 128K × 36 mode.

Does the 71V3579S85PFG support BW3 and BW4 pins?

No, the 71V3579S85PFG does not support BW3 and BW4 pins - this is explicitly stated in the datasheet note: "BW3 and BW4 are not applicable for the 71V3579." Only BW1 and BW2 are functional, controlling byte groups I/O0–I/O8/I/OP1 and I/O9–I/O17/I/OP2 respectively. Using BW3/BW4 signals will have no effect on the 71V3579S85PFG.

What is the role of the LBO pin on the 71V3579S85PFG?

The LBO (Linear Burst Order) pin on the 71V3579S85PFG is an asynchronous static input that selects burst address sequence: LOW configures linear order (00→01→10→11), HIGH selects interleaved order (00→01→11→10). It must remain stable during device operation and is internally pulled to VDD if left unconnected. This setting directly determines how the internal burst counter advances A0/A1 during burst reads/writes.

How does the ZZ pin function on the 71V3579S85PFG?

The ZZ pin on the 71V3579S85PFG is an asynchronous input that places the device into full sleep mode when driven HIGH, reducing supply current to ≤35 µA (IZZ). It is internally pulled down, so leaving it unconnected maintains active operation. Recovery time (tZZR) is 100 ns, and the device must be deselected before exiting sleep mode - ensuring predictable power-state transitions without clock dependency.

Is the 71V3579S85PFG available in packages other than TQFP?

The 71V3579S85PFG is specifically qualified and marked for the 100-pin TQFP package (suffix "PFG"). While the broader 71V3577/79 family includes 119-ball BGA and 165-ball fBGA variants, the "85PFG" speed/package suffix denotes the 8.5 ns, industrial-grade, 100-pin TQFP version only. BGA variants use different part numbers (e.g., 71V3579S85BG) and are not interchangeable with 71V3579S85PFG due to pinout and thermal/mechanical differences.

71V3579S85PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 256K x 18

Memory Interface:: Parallel

Clock Frequency:: 87 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V3579S85PFG FAQ

1.How can I place an order for 71V3579S85PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3579S85PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3579S85PFG reliable?

The price and inventory of 71V3579S85PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S85PFG is usually 5 days.

3.What payment methods are accepted for 71V3579S85PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S85PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3579S85PFG?

71V3579S85PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3579S85PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3579S85PFG?

For technical support, including 71V3579S85PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S85PFG requirements.

6.How does Aetrix verify that 71V3579S85PFG is sourced from the original manufacturer or authorized distributors?

All 71V3579S85PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S85PFG meets industry standards.

7.What is the process for return or replacement of 71V3579S85PFG?

All 71V3579S85PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S85PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3579S85PFG part is unused and in its original packaging.

Return procedure for 71V3579S85PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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