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Renesas 71V3579S85PFG8
- Part No.:
- 71V3579S85PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S85PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,277
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Product details
Overview
71V3579S85PFG8 from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.5ns access time at 87MHz, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports burst read/write operations, single-cycle deselect, and low-power sleep mode via ZZ input - deployed in high-speed networking line cards and real-time DSP memory buffers.
For engineers reviewing the 71V3579S85PFG8 datasheet, 71V3579S85PFG8 pinout, 71V3579S85PFG8 application, or 71V3579S85PFG8 equivalent, key selection criteria include burst mode timing compliance, 3.3V I/O voltage tolerance, linear/interleaved burst order control via LBO, and compatibility with cache-coherent address status protocols (ADSP/ADSC).
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs - eliminating output register latency for deterministic tCD timing. Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO pin configuration (linear or interleaved).
Write operations support multiple granularities: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2 only; BW3/BW4 are not applicable per datasheet note). Power management includes three states: active (IDD), standby (ISB1/ISB2), and full sleep (IZZ ≤ 35µA) triggered asynchronously by ZZ HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit); configured as 18-bit wide data bus with A0–A17 addressing |
| Access Time / Max Frequency | 8.5ns access time at up to 87MHz clock frequency - guarantees tCD ≤ 8.5ns under industrial conditions |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate supplies enable I/O voltage stability during core power transitions |
| Burst Mode | Four-word burst with programmable linear or interleaved order via LBO pin - reduces address bus traffic by 75% per burst |
| Power States | Active (IDD ≤ 190mA), Standby (ISB1 ≤ 35mA), Sleep (IZZ ≤ 35µA) - enables dynamic power scaling in burst-idle intervals |
| Temperature Range | Industrial: –40°C to +85°C - qualified for embedded telecom and industrial control environments |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm); pin-compatible with 71V3577S variants but with distinct BWx pin mapping |
Pinout & Package
71V3579S85PFG8 is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC standard PKG100, with 0.5mm pitch and exposed thermal pad. Pinout follows the 256K × 18 configuration - BW3 and BW4 are NC (not connected), distinguishing it from the 128K × 36 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; defines 256K-word space |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock divider |
| ADSP / ADSC | Address Status Inputs | Asynchronous processor/cache handshake signals that trigger address register load - enables cache coherency |
| ADV | Burst Address Advance | Active-LOW signal controlling burst counter increment; HIGH suspends burst, enabling single-word access mid-burst |
| LBO | Linear/Interleaved Burst Order | Static DC input selecting burst sequence (LBO=LOW → linear; LBO=HIGH → interleaved); must remain stable during operation |
| GW / BWE / BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| OE | Output Enable | Asynchronous control of output drivers - enables tri-state during write or bus sharing without clock dependency |
| ZZ | Sleep Mode | Asynchronous HIGH-triggered power-down; internally pulled to VSS; retains data while reducing IZZ to ≤35µA |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus with flow-through output path - eliminates output register delay for minimal tCD |
| VDD / VDDQ / VSS | Power Supplies | Dual 3.3V supplies: VDD (core logic), VDDQ (I/O drivers); separate grounds prevent noise coupling between domains |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register latency - delivers first valid data within tCD ≤ 8.5ns after CLK rise, critical for real-time pipeline alignment |
| Single-cycle deselect | Chip deactivation completes in one clock cycle (via CE/CS0/CS1 transition), minimizing bus turnaround overhead in multi-device systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved burst sequences - matches memory access patterns of specific processors (e.g., PowerPC vs. ARM) |
| Asynchronous sleep entry (ZZ) | Reduces supply current to ≤35µA without clock gating or software sequencing - enables instant wake-up with full data retention |
| Byte-write granularity (BW1/BW2) | Enables partial 9-bit word updates without disturbing adjacent bytes - essential for protocol header manipulation in packet processing |
Applications
| Networking Line Card Buffer | DSP Real-Time Memory |
|---|---|
|
Use Scenario: High-speed packet buffering in 10G Ethernet MAC interfaces requiring deterministic latency and burst-aligned data transfers. IC Role / Device Role / Timing Role: Primary data buffer between SERDES PHY and packet classifier ASIC; provides 4-word burst reads aligned to clock edges. Use Value: Flow-through output ensures tCD ≤ 8.5ns, enabling sub-10ns pipeline stages; single-cycle deselect supports rapid context switching between traffic flows. |
Use Scenario: On-chip memory extension for TI C6000 or Analog Devices SHARC DSPs executing FFT-based signal analysis with burst-mode coefficient loading. IC Role / Device Role / Timing Role: External program/data RAM interfaced via EMIF; uses ADV/LBO to match DSP's native burst addressing scheme. Use Value: 87MHz operation sustains 156 MB/s sustained bandwidth; industrial temp rating ensures reliability in sealed fanless enclosures. |
| Industrial PLC Data Log | Avionics Sensor Interface |
|
Use Scenario: Non-volatile event logging in programmable logic controllers where SRAM retains timestamped sensor data during brief power interruptions. IC Role / Device Role / Timing Role: Battery-backed memory buffer; ZZ pin driven by power-fail detector to enter sleep mode before backup capacitor depletion. Use Value: IZZ ≤ 35µA extends backup runtime; industrial temperature range (–40°C to +85°C) supports operation in unconditioned control cabinets. |
Use Scenario: High-integrity data capture for inertial measurement units (IMUs) in flight control systems requiring error-free burst reads under EMI stress. IC Role / Device Role / Timing Role: Synchronized acquisition buffer between ADC interface and safety-critical microcontroller; uses ADSP/ADSC for precise sample alignment. Use Value: Separate VDD/VDDQ supplies isolate analog-sensitive I/O from digital core noise; flow-through output avoids metastability in safety-critical timing paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S85PFG8 | 128K × 36-bit organization; supports BW3/BW4; identical timing and package | Targets 36-bit bus architectures (e.g., legacy PCI-X, VMEbus); not pin-compatible due to different BWx and I/O pin assignments | Select when 36-bit data width and full 4-byte write control are required; verify ADSP/ADSC timing compatibility |
| CY7C1315KV18-85BAXI | Cypress (Infineon) 256K × 18-bit QDR SRAM; 85MHz, 3.3V; differential clock inputs; no LBO/ADV pins | Designed for high-bandwidth bidirectional burst transfers (read/write simultaneously); lacks cache-coherent ADSP/ADSC interface | Choose for QDR protocol compliance and dual-data-rate throughput; avoid if system relies on ADSP/ADSC handshake or linear burst ordering |
Compared with 71V3579S85PFG8, the 71V3577S85PFG8 offers wider data bus and additional byte enables but requires PCB redesign due to differing I/O mapping, while the CY7C1315KV18-85BAXI delivers higher aggregate bandwidth but sacrifices cache-coherency support and burst-order flexibility.
Availability
71V3579S85PFG8 is available at Aetrix Electronics and suitable for networking line cards, DSP accelerators, industrial PLCs, and avionics sensor interfaces requiring stable component supply across extended product lifecycles.
Supply support for 71V3579S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory expansion in real-time embedded systems demanding deterministic timing and industrial-grade reliability.
FAQ
What memory organization does the 71V3579S85PFG8 implement?
The 71V3579S85PFG8 implements a 256K × 18-bit organization (4.6 Mbit total), addressed using A0–A17 inputs. This configuration supports an 18-bit data bus with dedicated I/O0–I/O17 and parity pins I/OP1–I/OP2. Unlike the 71V3577S variant, BW3 and BW4 are not connected - confirmed in the datasheet note "BW3 and BW4 are not applicable for the 71V3579." The 71V3579S85PFG8 is specifically optimized for 18-bit-wide systems requiring burst efficiency without full 36-bit width.
How does the LBO pin affect burst behavior in the 71V3579S85PFG8?
The LBO (Linear Burst Order) pin on the 71V3579S85PFG8 statically configures the internal burst counter sequence: LBO = LOW selects linear order (00→01→10→11), while LBO = HIGH selects interleaved order (00→01→11→10). This selection occurs at power-up or after ZZ recovery and must remain stable during operation. The 71V3579S85PFG8 datasheet explicitly defines both sequences in Tables 14 and 15, confirming hardware-level control without register programming - critical for matching processor-specific burst expectations in real-time systems.
What is the role of ADSP and ADSC inputs in the 71V3579S85PFG8 interface?
ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous, active-LOW inputs on the 71V3579S85PFG8 that gate address register loading. ADSP is enabled only when CE is LOW and is used for direct CPU-initiated accesses; ADSC operates independently and supports cache-coherent memory transactions. Both signals allow the 71V3579S85PFG8 to synchronize with external bus protocols without requiring fixed wait states - a key enabler for integration into MIPS or PowerPC-based systems with split-cache architectures.
Does the 71V3579S85PFG8 support true 3.3V I/O compatibility?
Yes, the 71V3579S85PFG8 supports true 3.3V I/O compatibility via dedicated VDDQ = 3.3V ±5% supply, electrically isolated from the core VDD rail. Its VIH (I/O) minimum is 2.0V and maximum is VDDQ + 0.3V, while VIL maximum is 0.8V - fully compliant with LVTTL and LVCMOS 3.3V logic families. This separation ensures signal integrity in mixed-voltage systems and eliminates level-shifter requirements when interfacing with 3.3V FPGAs or microcontrollers - a verified design feature confirmed in DC Electrical Characteristics Table 08.
What power states does the 71V3579S85PFG8 support, and how are they entered?
The 71V3579S85PFG8 supports three defined power states: Active (IDD ≤ 190mA), Standby (ISB1 ≤ 35mA), and Full Sleep (IZZ ≤ 35µA). Standby is entered by deasserting CE/CS0/CS1; Full Sleep is entered asynchronously by driving ZZ HIGH - no clock or timing sequence required. Data retention is guaranteed in Sleep mode per datasheet Section 6.42, page 9. The 71V3579S85PFG8's internal pull-down on ZZ simplifies implementation, allowing direct connection to a power-fail comparator output without external biasing.
71V3579S85PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S85PFG8 FAQ
1.How can I place an order for 71V3579S85PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S85PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S85PFG8 reliable?
The price and inventory of 71V3579S85PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S85PFG8 is usually 5 days.
3.What payment methods are accepted for 71V3579S85PFG8?
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71V3579S85PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S85PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S85PFG8?
For technical support, including 71V3579S85PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S85PFG8 requirements.
6.How does Aetrix verify that 71V3579S85PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3579S85PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S85PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3579S85PFG8?
All 71V3579S85PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S85PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S85PFG8 part is unused and in its original packaging.
Return procedure for 71V3579S85PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S85PFG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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