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Renesas 71V3579S85PFGI
- Part No.:
- 71V3579S85PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S85PFGI.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,445
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Product details
Overview
71V3579S85PFGI from Renesas Electronics is a 256K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5ns access time at up to 87MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features asynchronous ZZ sleep mode and LBO-configurable linear/interleaved burst order. It is used in high-speed cache and buffer applications in networking and telecom equipment.
For engineers reviewing the 71V3579S85PFGI datasheet, 71V3579S85PFGI pinout, 71V3579S85PFGI application, or 71V3579S85PFGI equivalent, key selection criteria include burst-mode timing compliance, TQFP-100 package compatibility, industrial temperature support, flow-through output latency, and byte-write enable granularity for memory subsystem optimization.
Technical Context
The 71V3579S85PFGI implements a synchronous, clock-driven architecture with registered address and data inputs, but unregistered (flow-through) outputs-enabling zero-cycle output latency after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO input.
It supports four distinct write control modes: global write (GW), byte write enable (BWE), and individual BW1–BW4 (though BW3/BW4 are not applicable per datasheet Note 1). Power management includes asynchronous ZZ sleep mode with guaranteed data retention and <35µA ISB1 standby current at industrial temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.6 Mbit); supports 18-bit wide data bus interface without external multiplexing |
| Access Time / Max Frequency | 8.5ns access time; enables reliable operation up to 87MHz system clock in industrial temperature range |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); eliminates level-shifting requirements for 3.3V logic systems |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded and infrastructure applications |
| Output Architecture | Flow-through (no output register); delivers first valid data on same clock cycle as address latch-critical for low-latency cache line fills |
| Sleep Mode Current | IZZ ≤ 35µA at VDD = max; enables ultra-low-power idle states in power-constrained systems |
| Burst Control | LBO pin selects linear or interleaved 4-word burst sequence; no external sequencing logic required |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant (PFGI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A1 select burst word within 4-word sequence; A2–A17 define base row/column |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip selection hierarchy; CE gates ADSP, CS0 active-HIGH, CS1 active-LOW for flexible decode |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst (single-cycle access) |
| LBO | Linear/Interleaved Burst Order | Static DC input; LOW = linear sequence (00→01→10→11), HIGH = interleaved (00→01→11→10); must remain stable during operation |
| GW, BWE, BW1–BW4 | Write Controls | GW writes all 18 bits; BWE enables byte-write mode; BW1–BW2 control lower/upper 9-bit bytes (BW3/BW4 not used in 71V3579) |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; synchronous input path, flow-through output path; no output enable delay penalty |
| ZZ | Sleep Mode | Asynchronous HIGH-active input; gates internal clock and reduces supply current to microamp range while retaining data |
| OE | Output Enable | Asynchronous LOW-active; controls I/O drivers only-does not affect internal timing or power state |
| VDD, VDDQ, VSS | Power/Ground | Dual-supply design: VDD powers core logic, VDDQ powers I/O buffers; separate pins reduce noise coupling and support independent decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay-first data appears tCD ns after CLK rise, enabling tight timing closure in high-frequency bus interfaces |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle of chip disable, preventing bus contention during rapid context switches |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing matches CPU/cache controller expectations without firmware overhead |
| Asynchronous ZZ sleep mode | Reduces active power by >90% (from ~200mA to <35µA) while preserving memory contents-ideal for burst-idle workloads |
| Byte-write granularity (BW1/BW2) | Enables precise 9-bit updates without read-modify-write cycles, reducing bus traffic and write amplification in packet buffering |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Temporary storage of variable-length Ethernet frames in switch ASIC ingress pipelines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame descriptor and payload buffer with burst-aligned access. Use Value: 8.5ns access + flow-through outputs enable full 87MHz bus utilization; byte-write capability allows efficient header-only updates without full-frame rewrite. | Use Scenario: Storing real-time voice sample buffers and protocol stack metadata in carrier-grade DSLAM line cards. IC Role / Device Role / Timing Role: Synchronous cache SRAM interfacing directly to DSP or RISC processor local bus with burst coherency. Use Value: Industrial temperature rating (–40°C to +85°C) ensures reliability in uncontrolled cabinet environments; ZZ sleep mode cuts standby power during silent periods. |
| Industrial PLC Data Logging | Radar Signal Processing FIFO |
Use Scenario: Cyclic acquisition and timestamped storage of sensor readings in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/ADV control) serving as circular buffer between ADC interface and ARM Cortex-M host. Use Value: Single-cycle deselect allows seamless handoff between acquisition and upload phases; 256K×18 organization matches 16-bit analog channel + status word packing. | Use Scenario: Real-time buffering of digitized IF samples between ADC and FFT engine in phased-array radar front ends. IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory stage synchronizing multi-GSPS sampling clocks with processing pipeline. Use Value: tCD = 8.5ns and tCDC = 2ns ensure minimal skew between successive burst words-critical for coherent signal reconstruction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S85PFGI | 128K × 36 organization; same speed grade, package, and feature set-but wider 36-bit bus and half the depth | Preferred for 32-bit+ data paths requiring higher per-cycle throughput over narrower address space | Select when system bus width is ≥32 bits and total memory requirement is ≤4.6 Mbit with 36-bit alignment |
| AS7C3256B-85PCN | Commercial-temp-only (0°C to +70°C); 32K × 8 async SRAM; no burst, no flow-through, no ZZ sleep | Used in cost-sensitive, non-industrial applications where timing margin is generous and power cycling is infrequent | Choose only if industrial temp, burst performance, and low-power sleep are not required-and PCB layout allows async timing relaxation |
Compared with 71V3579S85PFGI, the 71V3577S85PFGI offers double data width at half depth and identical timing/package, while AS7C3256B-85PCN lacks burst, flow-through, and sleep features-making it unsuitable for latency-critical or thermally demanding deployments.
Availability
71V3579S85PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, industrial PLC data logging, and radar signal processing FIFO applications requiring stable component supply, long-term industrial temperature support, and verified burst-mode timing compliance.
Supply support for 71V3579S85PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3579S series belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in networking, telecom, and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V3579S85PFGI?
The 71V3579S85PFGI supports up to 87MHz clock frequency at 8.5ns access time in the industrial temperature range (–40°C to +85°C). This speed grade is validated for TQFP-100 packaging and requires strict adherence to setup/hold timing margins per the AC Electrical Characteristics table in the official Renesas datasheet.
Does the 71V3579S85PFGI support both linear and interleaved burst modes?
Yes, the 71V3579S85PFGI supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11), and LBO = HIGH selects interleaved (00→01→11→10). The datasheet explicitly confirms this behavior applies to the 71V3579S family, and LBO must remain static during operation.
Is the 71V3579S85PFGI pin-compatible with the 71V3577S85PFGI?
No-the 71V3579S85PFGI (256K × 18) and 71V3577S85PFGI (128K × 36) share the same TQFP-100 package and pinout, but differ functionally: BW3/BW4 are NC on 71V3579S, whereas they are active on 71V3577S. Direct substitution requires verification of byte-enable usage and address mapping in the target design.
What is the purpose of the ADV pin on the 71V3579S85PFGI?
The ADV (Burst Address Advance) pin on the 71V3579S85PFGI is an active-LOW synchronous input that controls the internal burst counter. When ADV = LOW, the counter increments to deliver the next burst word; when ADV = HIGH, burst advancement halts, enabling single-cycle reads/writes without automatic address progression.
How does the ZZ pin affect power consumption in the 71V3579S85PFGI?
The ZZ pin on the 71V3579S85PFGI places the device into full sleep mode when driven HIGH, reducing supply current to ≤35µA (ISB1) while guaranteeing data retention. Internal clock gating eliminates dynamic power, and the device resumes normal operation within tZZR (100ns) after ZZ returns LOW-enabling rapid wake/sleep cycling in power-aware systems.
71V3579S85PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S85PFGI FAQ
1.How can I place an order for 71V3579S85PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S85PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S85PFGI reliable?
The price and inventory of 71V3579S85PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S85PFGI is usually 5 days.
3.What payment methods are accepted for 71V3579S85PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S85PFGI transactions.
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4.How is shipping managed for 71V3579S85PFGI?
71V3579S85PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S85PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S85PFGI?
For technical support, including 71V3579S85PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S85PFGI requirements.
6.How does Aetrix verify that 71V3579S85PFGI is sourced from the original manufacturer or authorized distributors?
All 71V3579S85PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S85PFGI meets industry standards.
7.What is the process for return or replacement of 71V3579S85PFGI?
All 71V3579S85PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S85PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S85PFGI part is unused and in its original packaging.
Return procedure for 71V3579S85PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S85PFGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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