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Renesas 71V3579S85PFGI8
- Part No.:
- 71V3579S85PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3579S85PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,110
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Product details
Overview
71V3579S85PFGI8 from Renesas Electronics is a 256K × 18-bit (4.6 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It serves as high-speed cache or buffer memory in networking line cards and real-time DSP subsystems requiring burst-mode data throughput.
For engineers reviewing the 71V3579S85PFGI8 datasheet, 71V3579S85PFGI8 pinout, 71V3579S85PFGI8 application, or 71V3579S85PFGI8 equivalent, key selection criteria include its linear/interleaved burst mode control via LBO, single-cycle deselect capability, self-timed write with byte- or global-write enable, and guaranteed data retention in ZZ sleep mode.
Technical Context
The 71V3579S85PFGI8 implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling minimal read latency after clock edge. Its internal 2-bit burst counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state (linear vs. interleaved).
Write operations are fully synchronous and support multiple modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls (note: BW3/BW4 not applicable for 71V3579), and asynchronous OE and ZZ inputs for output enable and deep sleep entry. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 18-bit (4.608 Mbit); supports only this configuration - no 128K×36 variant |
| Access Time / Max Clock | 8.5 ns / 87 MHz; guaranteed across industrial temperature range (–40°C to +85°C) |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); independent rails enable noise isolation |
| Burst Mode Control | LBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence; static during operation |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 µA at f = 0 |
| Output Architecture | Flow-through (no output register); tCD = 8.5 ns max from CLK↑ to valid data; tOHZ = 3.5 ns max |
| Package & Pin Count | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); pin-compatible with 71V3577S variants in same package |
Pinout & Package
71V3579S85PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin functions are fully defined per Renesas datasheet revision 6.42; note that BW3 and BW4 are NC for this 256K×18 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; A0–A16 used for 256K×18 addressing; A17 is valid and required |
| CLK | Clock Input | Synchronous timing reference; all register inputs sampled on rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | 3-signal chip select logic (CE=LOW, CS0=HIGH, CS1=LOW) enables device decoding |
| ADV | Burst Address Advance | Active-LOW signal controlling burst counter increment; HIGH suspends burst |
| LBO | Linear/Interleaved Burst Order | Asynchronous static control; LOW = linear sequence, HIGH = interleaved sequence |
| GW, BWE, BW1–BW2 | Write Controls | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; synchronous input path, flow-through output path |
| ZZ | Sleep Mode | Asynchronous HIGH-active input; gates internal clock and reduces supply current to ≤35 µA |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.5 ns max directly from CLK↑, critical for low-latency read cycles |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle of CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches CPU/cache controller addressing patterns |
| Self-timed write with flexible granularity | Supports full-word (GW), dual-byte (BW1+BW2), or partial writes - no external write timing control needed |
| Industrial-grade power management | IZZ ≤ 35 µA in sleep mode; ISB1 ≤ 35 µA in standby - validated across –40°C to +85°C |
Applications
| Networking Line Card Buffer | DSP-Based Real-Time Signal Processing |
|---|---|
Use Scenario: High-throughput packet buffering in 10G Ethernet MAC interfaces where deterministic latency is required. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet FIFO with burst reads aligned to 64-bit bus transfers. Use Value: 8.5 ns tCD and flow-through outputs enable sub-10 ns read turnaround; single-cycle deselect prevents bus glitches during rapid context switches. | Use Scenario: Co-processor memory for TI C6000 or Analog Devices SHARC DSPs performing radar pulse compression. IC Role / Device Role / Timing Role: Dual-port-accessible buffer storing intermediate FFT coefficients with burst-aligned DMA reads. Use Value: LBO-configurable burst order matches DSP's native memory access pattern; 256K×18 organization aligns with 36-bit coefficient word size. |
| Industrial PLC Motion Control Module | Avionics Data Acquisition Buffer |
Use Scenario: Storing encoder position snapshots and servo command history in safety-critical motion controllers. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory interfaced to ARM Cortex-R5F with AXI-lite wrapper. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode ensure reliability during thermal cycling; tHA = 0.5 ns hold time simplifies PCB layout timing closure. | Use Scenario: Buffered sensor data capture from ARINC 429 receivers prior to ARINC 664 (AFDX) packetization. IC Role / Device Role / Timing Role: High-integrity intermediate storage between legacy avionics buses and modern switched Ethernet. Use Value: Guaranteed data retention in ZZ sleep mode supports power-gating during idle intervals; VDD/VDDQ separation minimizes I/O noise coupling into analog front-end paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375DV33-85AXC | 256K × 18, 85 MHz, 3.3V, 100-pin TQFP; flow-through output; no LBO pin - fixed interleaved burst | Lacks hardware-configurable burst order; requires external logic to emulate linear mode | Select when burst sequence is fixed and LBO flexibility is unnecessary; identical timing and pinout except LBO/NC mapping |
| AS7C3256B-85JCIN | 256K × 18, 85 MHz, 3.3V, 100-pin TQFP; pipelined (not flow-through) output; tCD = 8.5 ns but includes 1-cycle pipeline delay | Pipelined output adds 1-cycle latency; incompatible with zero-wait-state flow-through timing constraints | Select only if system design accommodates output register delay; not drop-in for 71V3579S85PFGI8 flow-through use cases |
Compared with CY7C1375DV33-85AXC and AS7C3256B-85JCIN, the 71V3579S85PFGI8 uniquely delivers configurable burst order and true flow-through timing in an industrial-grade 100-pin TQFP package - essential for latency-sensitive, multi-protocol embedded systems.
Availability
71V3579S85PFGI8 is available at Aetrix Electronics and suitable for networking line cards, DSP-based signal processing modules, industrial PLC motion controllers, and avionics data acquisition systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3579S85PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V357x family was designed specifically for high-bandwidth, low-latency embedded memory applications requiring synchronous burst access, industrial temperature resilience, and flexible power management - targeting communications infrastructure and real-time control systems.
FAQ
What memory organization does the 71V3579S85PFGI8 support?
The 71V3579S85PFGI8 is strictly a 256K × 18-bit (4.608 Mbit) synchronous SRAM. Unlike the 71V3577S, it does not support the 128K × 36 configuration. Address pins A0–A17 are all active, with A17 required for full addressing. This fixed organization simplifies memory mapping in 18-bit or 36-bit (dual-word) data paths.
Does the 71V3579S85PFGI8 support both linear and interleaved burst modes?
Yes, the 71V3579S85PFGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst addressing (00→01→10→11). When LBO = HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and must remain static during operation - changing it mid-burst causes undefined behavior.
What is the function of the ADV pin on the 71V3579S85PFGI8?
The ADV (Burst Address Advance) pin is an active-LOW synchronous input that controls the internal 2-bit burst counter. When ADV = LOW on a clock edge, the counter increments and the next burst address is generated. When ADV = HIGH, burst advancement is suspended - allowing repeated access to the same base address without counter wraparound. This enables flexible burst-length control in custom logic designs.
Are BW3 and BW4 functional on the 71V3579S85PFGI8?
No, BW3 and BW4 are not functional on the 71V3579S85PFGI8. As explicitly stated in the Renesas datasheet (Note 1, page 3), these pins are "not applicable for the 71V3579." They are NC (no-connect) terminals in both 100-pin TQFP and BGA variants. Only BW1 and BW2 are active, controlling bytes 0–8/I/OP1 and 9–17/I/OP2 respectively.
What power supply requirements does the 71V3579S85PFGI8 have?
The 71V3579S85PFGI8 requires two independent 3.3 V supplies: VDD (core logic, ±5%) and VDDQ (I/O drivers, ±5%). Both must be ramped within specification; however, no strict sequencing is mandated. The ZZ pin enables full sleep mode, reducing current to ≤35 µA. DC operating conditions are validated across –40°C to +85°C, with VDD and VDDQ tolerances maintained over the full range.
71V3579S85PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 256K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3579S85PFGI8 FAQ
1.How can I place an order for 71V3579S85PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3579S85PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3579S85PFGI8 reliable?
The price and inventory of 71V3579S85PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3579S85PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3579S85PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3579S85PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3579S85PFGI8?
71V3579S85PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3579S85PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3579S85PFGI8?
For technical support, including 71V3579S85PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3579S85PFGI8 requirements.
6.How does Aetrix verify that 71V3579S85PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3579S85PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3579S85PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3579S85PFGI8?
All 71V3579S85PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3579S85PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3579S85PFGI8 part is unused and in its original packaging.
Return procedure for 71V3579S85PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3579S85PFGI8 Tags
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