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Renesas 71V416L10BE
- Part No.:
- 71V416L10BE
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L10BE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:250
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Product details
Overview
71V416L10BE from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout. It serves as a non-refreshing, fully static asynchronous memory buffer in embedded controllers, networking packet buffers, and industrial real-time data acquisition systems.
For engineers reviewing the 71V416L10BE datasheet, 71V416L10BE pinout, 71V416L10BE application, or 71V416L10BE equivalent, key selection criteria include its 10 ns read cycle time, byte-enable-controlled 16-bit bidirectional I/O, low standby current (10 mA), BGA-48 package footprint, and commercial temperature range (0°C to +70°C).
Technical Context
The 71V416L10BE implements a fully static asynchronous architecture with no clocks or refresh required. Its dual-byte enable (BHE/BLE), independent chip select (CS), and output enable (OE) support flexible word/byte read/write control without external logic.
It uses high-reliability CMOS process technology optimized for low dynamic and static power: ICC = 180 mA (max) at fMAX under active read, ISB = 50 mA (max) during dynamic standby, and ISB1 = 10 mA (max) in full static standby - all specified at VDD = 3.0–3.6 V and TA = 0°C to +70°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) |
| Access Time (tAA) | 10 ns - enables ≤100 MHz burst read cycles in synchronous interface bridges |
| Supply Voltage | 3.3 V ±10% - compatible with LVTTL logic families and modern 3.3 V system rails |
| Standby Current (ISB1) | 10 mA max - reduces idle power in battery-backed or energy-sensitive applications |
| I/O Interface | LVTTL-compatible bidirectional - direct connection to FPGA I/O banks and microcontroller data buses without level shifters |
| Package | 48-ball CABGA (9 mm × 9 mm, BE48) - supports high-density PCB layouts with thermal pad for improved heat dissipation |
| Temperature Range | Commercial: 0°C to +70°C - validated for office, telecom infrastructure, and consumer electronics environments |
Pinout & Package
71V416L10BE is packaged in a 48-ball fine-pitch CABGA (BE48) with 0.8 mm pitch, 9 mm × 9 mm body, and exposed thermal pad. Pinout follows JEDEC-standard center power/ground configuration to minimize switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled by BLE; isolated from high byte during byte writes |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled by BHE; operates independently of low byte |
| CS | Chip Select | Active-low global enable; device enters high-Z state when deasserted, reducing bus contention |
| OE | Output Enable | Active-low control for output drivers; allows read data gating without affecting CS or WE timing |
| WE | Write Enable | Active-low write strobe; initiates write cycles when CS and byte enables are active |
| BHE / BLE | Byte Enable Inputs | Independent active-low controls for high/low byte; enable partial-word writes without read-modify-write overhead |
| VDD / VSS | Power / Ground | Center-placed pins (per JEDEC) reduce simultaneous switching noise and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces ground bounce and supply noise during high-speed I/O transitions, improving timing margin in dense layouts |
| Separate High/Low Byte Enables | Enables true 8-bit sub-word writes without external latch logic or software masking overhead |
| 10 ns Address Access Time (tAA) | Supports tight timing closure in FPGA-to-SRAM interfaces and microcontroller-based DMA engines |
| 10 mA Full Standby Current (ISB1) | Permits use in always-on systems with periodic wake-up, such as smart meter data loggers |
| LVTTL-Compatible I/O | Eliminates need for voltage translators when interfacing with Xilinx Artix-7, Intel MAX 10, or Renesas RA-series MCUs |
Applications
| Industrial PLC Data Buffer | Network Packet Memory |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic variables in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous static RAM providing zero-wait-state data storage for CPU and DMA access with 10 ns tAA latency. Use Value: Eliminates refresh overhead and guarantees consistent 10 ns access across temperature, enabling sub-microsecond I/O response times. | Use Scenario: Temporary buffering of Ethernet frames in Layer 2 switches before forwarding or classification. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as first-in-first-out (FIFO) depth extender for packet ingress/egress queues. Use Value: Byte-enable support allows partial frame writes without bus locking; 10 ns tAA enables line-rate 1 Gbps packet handling. |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Buffer |
Use Scenario: Capturing and holding raw sensor data from ultrasound transducer arrays prior to DSP processing. IC Role / Device Role / Timing Role: High-reliability, non-volatile-buffer SRAM acting as frame memory between ADC interface and FPGA image pipeline. Use Value: 3.3 V LVTTL compatibility simplifies interface to TI ADS58B19 ADC; 10 mA ISB1 extends battery runtime in portable units. | Use Scenario: Storing pre-fused radar and camera object lists in automotive domain controllers before decision-making algorithms execute. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple safety-critical cores via shared bus. Use Value: Center VDD/VSS pinout minimizes EMI in noisy vehicle environments; commercial-grade reliability meets ISO 16750-2 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 16 Mbit (1M × 16), 10 ns, 3.3 V, TSOP-44 - higher density but larger package and no BGA option | Used where board space permits TSOP and >4 Mbit capacity is needed; lacks 48-ball BGA footprint | Select when memory expansion beyond 4 Mbit is required and PCB layout accommodates 44-pin TSOP |
| AS6C4008-10TIN | 4 Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44 - same density/speed but SOJ package with higher profile and lower thermal performance | Preferred in legacy designs using through-hole or SOJ-compatible reflow profiles; no thermal pad | Choose only for backward compatibility with existing SOJ footprints or where BGA assembly is unavailable |
Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10BE uniquely offers a compact 48-ball CABGA with thermal pad, JEDEC-compliant noise-reducing pinout, and lowest full-standby current (10 mA), making it optimal for space-constrained, thermally sensitive, and power-aware embedded systems.
Availability
71V416L10BE is available at Aetrix Electronics and suitable for industrial PLC data buffers, network packet memory, medical imaging frame stores, and automotive ADAS preprocessing buffers requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.
Supply support for 71V416L10BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416L10BE belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency, non-refreshing memory in real-time control and data acquisition systems.
FAQ
What is the maximum operating frequency supported by the 71V416L10BE?
The 71V416L10BE does not operate on a clock; it is an asynchronous SRAM. Its 10 ns access time (tAA) and 10 ns read cycle time (tRC) support effective data throughput up to 100 MHz in burst-read configurations when interfaced with appropriate controllers. Timing is governed by address setup/hold and enable signal propagation, not a system clock.
Does the 71V416L10BE require refresh circuitry or external clocks?
No, the 71V416L10BE is a fully static RAM and requires no refresh cycles, clocks, or timing generators. Its internal latching circuitry retains data indefinitely as long as VDD is applied and CS remains deasserted. This eliminates refresh overhead and simplifies system design compared to DRAM.
Can the 71V416L10BE be used with 5 V logic systems?
No - the 71V416L10BE is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic may damage the part. Level translation (e.g., TXB0108 or SN74AVC4T245) is required for 5 V host interfaces.
What is the function of the BHE and BLE pins on the 71V416L10BE?
BHE (High Byte Enable) and BLE (Low Byte Enable) are independent active-low inputs that control access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When only one is asserted, the 71V416L10BE performs an 8-bit byte write or read, isolating the unselected byte from bus activity - enabling efficient partial-word operations without read-modify-write sequences.
Is the 71V416L10BE pin-compatible with other speed grades in the 71V416 family?
Yes - all 71V416L variants (e.g., 71V416L12BE, 71V416L15BE) share identical pinouts, package dimensions, and electrical interface definitions. Only timing parameters (tAA, tRC, etc.) and power consumption differ. This allows drop-in replacement for timing margin validation or cost optimization without PCB redesign.
71V416L10BE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L10BE FAQ
1.How can I place an order for 71V416L10BE through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L10BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L10BE reliable?
The price and inventory of 71V416L10BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L10BE is usually 5 days.
3.What payment methods are accepted for 71V416L10BE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L10BE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L10BE?
71V416L10BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L10BE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L10BE?
For technical support, including 71V416L10BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L10BE requirements.
6.How does Aetrix verify that 71V416L10BE is sourced from the original manufacturer or authorized distributors?
All 71V416L10BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L10BE meets industry standards.
7.What is the process for return or replacement of 71V416L10BE?
All 71V416L10BE units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L10BE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L10BE part is unused and in its original packaging.
Return procedure for 71V416L10BE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L10BE Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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