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Renesas 71V416L10BEG8
- Part No.:
- 71V416L10BEG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L10BEG8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,455
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Product details
Overview
71V416L10BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in embedded controllers, network interface buffers, and real-time data acquisition systems.
For engineers reviewing the 71V416L10BEG8 datasheet, 71V416L10BEG8 pinout, 71V416L10BEG8 application, or 71V416L10BEG8 equivalent, key selection criteria include its 10 ns tAA/tRC timing, low-power standby current (10 mA ISB1), BGA-48 package compatibility, and byte-enable control for partial-word access in memory-constrained designs.
Technical Context
The 71V416L10BEG8 implements fully static asynchronous logic with no clocks or refresh required. Its architecture includes independent high-byte (BHE) and low-byte (BLE) enable inputs, output enable (OE) with 5 ns tOE, and chip select (CS) with 10 ns tACS - all supporting deterministic timing under industrial temperature conditions.
It uses high-reliability CMOS fabrication with LVTTL-compatible bidirectional I/O drivers, 3.3 V nominal supply (3.0–3.6 V range), and JEDEC-compliant SOJ/TSOP/BGA pinouts. The device features separate input and output capacitance specs (CIN = 6 pF, CI/O = 7 pF at 1 MHz) and meets absolute maximum ratings up to +125°C storage and –55°C bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 10 ns - guarantees address-to-data valid latency for real-time buffer applications |
| Supply Voltage | 3.3 V ±0.3 V - compatible with modern LVTTL and 3.3 V system rails without level shifting |
| Standby Current (ISB1) | 10 mA - enables low-power hold mode during processor sleep in portable industrial devices |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems without derating |
| I/O Compatibility | LVTTL - ensures direct interfacing with FPGA I/O banks and microcontroller GPIOs |
| Package | 48-ball BGA (BEG48), 9 mm × 9 mm - supports high-density PCB layouts with improved thermal dissipation vs. SOJ/TSOP |
Pinout & Package
71V416L10BEG8 is packaged in a 48-ball fine-pitch ball grid array (BEG48), 9 mm × 9 mm footprint, with 1.0 mm ball pitch and Pb-free (green) construction per ordering code suffix 'G' and '8'. Pin functions follow JEDEC-standard memory layout optimized for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; no external address latching required |
| CS | Chip Select | Active-low global enable; controls device power state and output driver activation |
| OE | Output Enable | Active-low control for tri-state output drivers; enables shared bus operation with 5 ns tOE |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and byte enables are asserted |
| BHE / BLE | Byte Enable Inputs | Independent high- and low-byte controls allow 8-bit partial writes without disturbing adjacent data |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit LVTTL I/O with 8 mA sink / 4 mA source drive strength; no external transceivers needed |
| VDD | Power Supply | 3.3 V core and I/O supply; decoupling required per JEDEC BGA layout guidelines |
| VSS | Ground | System ground reference; multiple VSS balls distributed for low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically placing VDD/VSS pins around perimeter |
| Byte-Enable Architecture | Enables selective 8-bit writes to upper or lower half of 16-bit word, minimizing bus contention and power spikes |
| Low-Power Standby Mode | 10 mA ISB1 current allows extended retention in battery-backed systems without SRAM controller intervention |
| 10 ns Read/Write Cycle | Supports 100 MHz burst interfaces in FPGAs and ASICs without wait states in critical timing paths |
| Industrial Temperature Qualification | Guaranteed parametric performance across –40°C to +85°C ambient, eliminating thermal margining in harsh environments |
Applications
| Industrial PLC Data Buffer | Network Packet Memory |
|---|---|
Use Scenario: Storing real-time I/O scan data between CPU cycles in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous dual-port-capable SRAM providing zero-wait-state read/write access for deterministic cyclic execution. Use Value: 10 ns tAA ensures sub-microsecond response to fieldbus interrupts; industrial temp rating eliminates cooling requirements in sealed enclosures. | Use Scenario: Temporary storage of Ethernet frame payloads in switch fabric ASICs before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer interfacing directly with MAC-layer logic via LVTTL bus. Use Value: Byte-enable capability allows efficient handling of variable-length frames; 48-ball BGA enables dense placement near PHY/FPGA die. |
| Medical Imaging Frame Store | Avionics Sensor Cache |
Use Scenario: Holding digitized X-ray or ultrasound line data during image reconstruction prior to DRAM transfer. IC Role / Device Role / Timing Role: Burst-access SRAM acting as front-end line buffer with deterministic 10 ns access for pixel pipeline synchronization. Use Value: Low ISB1 current extends battery life in portable diagnostic units; no refresh overhead simplifies safety-critical firmware design. | Use Scenario: Caching inertial measurement unit (IMU) samples in flight control computers where EMI resilience is mandatory. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM providing glitch-free data capture under high-noise avionics bus conditions. Use Value: JEDEC center-power pinout minimizes ground bounce during rapid sensor sampling bursts; industrial temp range covers aircraft cabin extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 16 Mbit (1M × 16), 10 ns, 3.3 V, TSOP-44 - higher density but larger package | Requires PCB redesign for TSOP-44 vs. BEG48; lacks byte-enable flexibility in some variants | Choose when >4 Mbit capacity is needed and board space permits TSOP footprint |
| AS6C4008-10TIN | 4 Mbit (512K × 8), 10 ns, 3.3 V, TSSOP-32 - 8-bit bus, no BHE/BLE pins | Only supports byte-wide interface; incompatible with 16-bit data path architectures | Consider only for legacy 8-bit microcontroller systems where bus width matches exactly |
Compared with 71V416L10BEG8, CY62167EV30LL-10ZSXI offers greater density but sacrifices BGA miniaturization and byte-select granularity, while AS6C4008-10TIN lacks 16-bit word support and dedicated byte enables - making 71V416L10BEG8 optimal for compact, high-throughput 16-bit embedded memory subsystems.
Availability
71V416L10BEG8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet memory, medical imaging frame stores, and avionics sensor caching requiring stable component supply across extended product lifecycles.
Supply support for 71V416L10BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416L10BEG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in resource-constrained real-time systems without refresh overhead.
FAQ
What is the operating voltage range for the 71V416L10BEG8?
The 71V416L10BEG8 operates over a supply voltage range of 3.0 V to 3.6 V, with nominal 3.3 V operation. This range ensures compatibility with standard LVTTL logic families and accommodates typical power rail tolerances in industrial systems. All DC and AC specifications - including tAA = 10 ns and ISB1 = 10 mA - are guaranteed across this full voltage window at industrial temperatures.
Does the 71V416L10BEG8 require external refresh circuitry?
No, the 71V416L10BEG8 is a fully static RAM and requires no refresh cycles or clocks for data retention. Its asynchronous design maintains stored data indefinitely as long as VDD remains within specification and CS is held high (deselected) or low (selected with stable address). This eliminates refresh-related timing constraints and firmware overhead in microcontroller-based systems.
What is the significance of the 'L' in the 71V416L10BEG8 part number?
The 'L' denotes the low-power variant of the IDT71V416 family. Compared to the 'S' (standard power) version, the 71V416L10BEG8 delivers reduced dynamic and standby currents - e.g., ISB1 = 10 mA versus 20 mA for the 'S' grade - while maintaining identical 10 ns timing and pinout. This makes it preferred for thermally constrained or battery-assisted industrial applications.
Can the 71V416L10BEG8 be used in a 16-bit microprocessor data bus interface?
Yes, the 71V416L10BEG8 is explicitly designed for 16-bit parallel bus interfaces. Its 16 bidirectional I/O lines (I/O0–I/O15), LVTTL-compatible signaling, and dedicated BHE/BLE pins enable seamless connection to 16-bit CPUs and FPGAs without glue logic. The 10 ns access time supports direct interfacing with processors running up to 100 MHz without wait states.
Is the 71V416L10BEG8 RoHS-compliant and halogen-free?
Yes, the 'G' and '8' suffixes in 71V416L10BEG8 indicate RoHS-compliant, lead-free, and halogen-free construction per Renesas' green part designation. The device meets JEDEC J-STD-609A Class 1 moisture sensitivity level (MSL-1) and is qualified for reflow soldering per IPC/JEDEC J-STD-020.
71V416L10BEG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L10BEG8 FAQ
1.How can I place an order for 71V416L10BEG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L10BEG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L10BEG8 reliable?
The price and inventory of 71V416L10BEG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L10BEG8 is usually 5 days.
3.What payment methods are accepted for 71V416L10BEG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L10BEG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L10BEG8?
71V416L10BEG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L10BEG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L10BEG8?
For technical support, including 71V416L10BEG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L10BEG8 requirements.
6.How does Aetrix verify that 71V416L10BEG8 is sourced from the original manufacturer or authorized distributors?
All 71V416L10BEG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L10BEG8 meets industry standards.
7.What is the process for return or replacement of 71V416L10BEG8?
All 71V416L10BEG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L10BEG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L10BEG8 part is unused and in its original packaging.
Return procedure for 71V416L10BEG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L10BEG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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