Renesas 71V416L10PHGI8

Overview

71V416L10PHGI8 from Renesas is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), LVTTL-compatible I/Os, and JEDEC-standard center power/ground pinout for noise reduction - used in real-time embedded controllers requiring deterministic memory access without refresh.

For engineers reviewing the 71V416L10PHGI8 datasheet, 71V416L10PHGI8 pinout, 71V416L10PHGI8 application, or 71V416L10PHGI8 equivalent, key selection criteria include its 10 ns read cycle time, low standby current (10 mA max), TSOP-II package compatibility, and byte-selectable write capability for legacy bus interfacing.

Technical Context

The 71V416L10PHGI8 implements fully static asynchronous architecture with no clocks or refresh required. Its address decoding supports A0–A17 (18-bit addressing), and control logic enables independent high- and low-byte writes via BHE and BLE pins while maintaining full 16-bit word read capability.

Timing is governed by three parallel control paths: chip-select–driven (tACS = 10 ns), output-enable–driven (tOE = 5 ns), and byte-enable–driven (tBE = 5 ns). All I/Os are bidirectional and LVTTL-compatible, with input leakage ≤5 µA and output drive strength specified at IOH = –4 mA / IOL = 8 mA.

Key Specifications

Pinout & Package

71V416L10PHGI8 is packaged in a 44-pin, 400-mil TSOP Type II (PHG44) with JEDEC-standard center power/ground pinout for reduced switching noise and improved signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10PHGI8 uniquely delivers industrial temperature operation, lowest standby current (10 mA), and JEDEC-compliant noise-reduction pinout - making it optimal for space-constrained, thermally demanding embedded systems where reliability outweighs raw density.

Availability

71V416L10PHGI8 is available at Aetrix Electronics and suitable for industrial PLCs, digital power converters, medical imaging front-ends, and avionics display subsystems requiring stable component supply across extended product lifecycles.

Supply support for 71V416L10PHGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V416L10PHGI8 belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-latency memory access in real-time embedded systems where refresh-free operation and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V416L10PHGI8?

The 71V416L10PHGI8 does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: tRC = 10 ns read cycle time and tWC = 10 ns write cycle time. These values set the upper bound for bus transaction rates - e.g., up to 100 million operations per second in ideal asynchronous burst scenarios. The 71V416L10PHGI8 achieves this using fully static CMOS design with no refresh or synchronization overhead.

Does the 71V416L10PHGI8 require external refresh circuitry?

No, the 71V416L10PHGI8 is a true static RAM and requires no external refresh circuitry. Its fully static asynchronous architecture uses six-transistor memory cells that retain data indefinitely as long as power is applied. This eliminates refresh-related timing constraints, bus contention, and power spikes - a key advantage over DRAM in deterministic real-time systems. The 71V416L10PHGI8 maintains data integrity across its full industrial temperature range without intervention.

Can the 71V416L10PHGI8 be used with 5 V logic interfaces?

No, the 71V416L10PHGI8 is strictly a 3.3 V LVTTL device with absolute maximum input voltage of VDD + 0.5 V (≤4.1 V). Direct connection to 5 V logic violates VIH/VIL specifications and risks latch-up or permanent damage. Interfacing with 5 V systems requires level translation - e.g., TI SN74AVC4T245 or NXP NXSL2012 - configured for 3.3 V ↔ 5 V bidirectional translation. The 71V416L10PHGI8 itself provides no internal voltage translation.

What is the function of the NC pins on the 71V416L10PHGI8 TSOP package?

The 71V416L10PHGI8 TSOP package has one NC (No Connect) pin - pin 23 in the PHG44 layout. Per Renesas documentation, this pin is not bonded internally and must remain unconnected on the PCB. It serves solely as a mechanical placeholder to maintain JEDEC-standard pin pitch and package symmetry. Routing traces to or placing vias on pin 23 may cause solder bridging or mechanical stress; the 71V416L10PHGI8 datasheet explicitly prohibits any electrical connection to this terminal.

How does the byte enable functionality work on the 71V416L10PHGI8?

The 71V416L10PHGI8 uses two dedicated inputs - BHE (pin 35) and BLE (pin 34) - to control high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) write operations independently. When BHE = L and BLE = H, only the high byte is written; when BHE = H and BLE = L, only the low byte is written; both low enables full 16-bit writes. This eliminates read-modify-write cycles in mixed-width data transfers. The 71V416L10PHGI8 truth table confirms these states apply during active CS and WE assertions.