Renesas 71V416L10YG

Overview

71V416L10YG from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It serves as a fast, asynchronous data buffer or working memory in embedded controllers, networking line cards, and industrial PLCs requiring deterministic timing and zero-refresh operation.

For engineers reviewing the 71V416L10YG datasheet, 71V416L10YG pinout, 71V416L10YG application, or 71V416L10YG equivalent, key selection criteria include its 10 ns read cycle time, byte-enable-controlled 8-bit subword access, industrial-grade SOJ-44 packaging, and low 10 mA full-standby current - critical for power-constrained real-time systems.

Technical Context

The 71V416L10YG implements fully static asynchronous logic with no clocks or refresh required. Its architecture supports independent high-byte (BHE) and low-byte (BLE) enables, allowing selective 8-bit writes without disturbing adjacent bytes - essential for efficient register-mapped I/O or partial-word updates.

It uses LVTTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA) to interface directly with 3.3 V microcontrollers and FPGAs. The device features three distinct enable paths: chip select (CS), output enable (OE), and byte enables - each with defined timing windows (e.g., tCLZ = 4 ns, tOE = 5 ns) enabling precise bus arbitration.

Key Specifications

Pinout & Package

71V416L10YG is housed in a 44-pin, 400-mil plastic SOJ (PBG44) package with JEDEC-standard center power/ground pinout - VDD and VSS located centrally (pins 13 and 14) to minimize simultaneous switching noise and improve signal integrity on dense PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10YG uniquely balances 10 ns speed, JEDEC-compliant SOJ-44 footprint, byte-enable flexibility, and 10 mA standby - making it optimal for legacy 16-bit bus designs where pin compatibility and deterministic timing are mandatory.

Availability

71V416L10YG is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging subsystems, and automated test equipment requiring stable component supply across multi-year production cycles.

Supply support for 71V416L10YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416L10YG belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency parallel memory interfacing in real-time embedded systems where refresh-free operation and precise timing control are essential.

FAQ

What is the maximum operating frequency supported by the 71V416L10YG?

The 71V416L10YG does not operate on a clock; it is an asynchronous SRAM. Its maximum effective bus frequency is determined by its 10 ns read cycle time (tRC), supporting up to 100 MHz burst transfers when interfaced with controllers that meet setup/hold timing. Real-world sustained throughput depends on bus protocol overhead and controller wait-state configuration - the 71V416L10YG itself imposes no clock limit.

Does the 71V416L10YG require external refresh circuitry?

No, the 71V416L10YG is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and within specification (3.0–3.6 V). This eliminates timing uncertainty and controller overhead associated with DRAM refresh, making the 71V416L10YG ideal for hard real-time applications.

Can the 71V416L10YG be used with a 5 V microcontroller?

No - the 71V416L10YG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic risks permanent damage. Interfacing with 5 V microcontrollers requires level translation (e.g., TXB0108) or use of a 3.3 V-compatible controller. The 71V416L10YG's I/O voltage domain is fixed to VDD.

What is the function of the NC pins on the 71V416L10YG SOJ package?

The 71V416L10YG SOJ package has one No-Connect (NC) pin - pin 1 (top-left corner in standard orientation). Per Renesas documentation, this pin is unconnected internally and must remain floating or grounded per PCB design rules; it serves no electrical function. Other pins labeled NC in BGA variants (e.g., BE48) do not apply to the 71V416L10YG SOJ configuration.

How does the 71V416L10YG handle partial-word writes using BHE and BLE?

The 71V416L10YG uses independent BHE (high-byte enable) and BLE (low-byte enable) inputs to gate write operations to I/O8–I/O15 or I/O0–I/O7 respectively. When only BHE is low and BLE is high, only the upper byte is written; when only BLE is low, only the lower byte is written. Both must be low for full 16-bit writes. This avoids read-modify-write sequences, preserving data integrity in multi-threaded or interrupt-driven contexts - a core capability of the 71V416L10YG.