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Renesas 71V416L10YG8
- Part No.:
- 71V416L10YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V416L10YG8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,779
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Product details
Overview
71V416L10YG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It serves as a fast, fully static asynchronous memory buffer in embedded controllers, network packet buffers, and industrial PLCs requiring deterministic timing and no refresh overhead.
For engineers reviewing the 71V416L10YG8 datasheet, 71V416L10YG8 pinout, 71V416L10YG8 application, or 71V416L10YG8 equivalent, key selection criteria include its 10 ns read cycle time, low-power standby current (10 mA), byte-enable architecture, SOJ-44 package compatibility, and commercial-grade temperature range (0°C to +70°C).
Technical Context
The 71V416L10YG8 implements a fully static asynchronous memory architecture with no clocks or refresh required. Its dual-byte enable (BHE/BLE), separate chip select (CS), output enable (OE), and write enable (WE) pins support flexible word/byte-level read/write control in bus-oriented systems.
It uses high-reliability CMOS fabrication with LVTTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive capability (IOH = –4 mA, IOL = 8 mA). The device guarantees tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns under commercial conditions with VDD = 3.0–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), enabling 16-bit data path interfacing without external multiplexing |
| Access Time (tAA) | 10 ns - defines minimum address-to-valid-data delay for synchronous bus timing closure |
| Read Cycle Time (tRC) | 10 ns - sets maximum sustained read throughput of 100 MHz in burst-free operation |
| Supply Voltage | 3.3 V ±10% (3.0–3.6 V) - compatible with modern low-voltage logic families and eliminates level-shifting needs |
| Standby Current (ISB1) | 10 mA - enables low-power hold mode during processor idle cycles without data loss |
| I/O Interface | LVTTL-compatible bidirectional data (I/O0–I/O15) - ensures direct connection to 3.3 V microcontrollers and FPGAs |
| Byte Enable Control | Separate BHE and BLE inputs - allows independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes |
Pinout & Package
71V416L10YG8 is supplied in a 44-pin, 400-mil plastic SOJ (PBG44) package with JEDEC-standard center-power/ground pinout to minimize simultaneous switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal multiplexing required |
| CS | Chip Select | Active-low global enable; deassertion places all outputs in high-impedance state |
| OE | Output Enable | Active-low control for output drivers; enables read data gating independent of CS |
| WE | Write Enable | Active-low signal initiating write cycle; combined with BHE/BLE determines byte write scope |
| BHE, BLE | Byte Enable | Independent active-low controls for high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL-compliant I/O bus; direction controlled by WE and CS states |
| VDD | Power Supply | 3.3 V main supply; two dedicated pins (pins 13 & 32) reduce IR drop and improve noise immunity |
| VSS | Ground | Ground reference; two dedicated pins (pins 12 & 31) provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by symmetrically distributing VDD/VSS pins across the package body |
| Equal Access & Cycle Times | 10 ns tAA = tRC ensures predictable timing margins in both random and sequential access patterns |
| Low-Power Standby Mode | ISB1 = 10 mA at VDD max enables energy-efficient operation during CPU sleep or system idle states |
| Byte-Write Capability | Independent BHE/BLE control permits partial-word updates without read-modify-write overhead |
| Single 3.3 V Supply | Eliminates need for dual-supply regulators or level shifters in 3.3 V system designs |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Storing real-time I/O status and ladder logic variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous static RAM providing zero-wait-state data storage for deterministic scan-cycle execution. Use Value: 10 ns access time ensures sub-microsecond variable read/write latency, critical for <1 ms control loop timing. | Use Scenario: Temporary storage of Ethernet frames in layer-2 switching ASICs before forwarding decisions are made. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffering between MAC and switch fabric interfaces. Use Value: 100 MHz effective read rate (tRC = 10 ns) supports line-rate 1 Gbps packet buffering with minimal queuing delay. |
| Medical Imaging Controller Frame Store | Avionics Display System Cache |
Use Scenario: Holding intermediate image processing results in portable ultrasound or X-ray units where power efficiency and reliability are paramount. IC Role / Device Role / Timing Role: Non-refreshing memory buffer preserving pixel data integrity during CPU-intensive DSP operations. Use Value: ISB1 = 10 mA standby current extends battery life while maintaining data retention during intermittent processing bursts. | Use Scenario: Caching graphics primitives and font glyphs in certified flight display units requiring DO-254 compliance. IC Role / Device Role / Timing Role: Deterministic-access memory ensuring guaranteed worst-case render latency for safety-critical HUD overlays. Use Value: Fully static operation and 10 ns tAA guarantee fixed, jitter-free memory response-no clock skew or refresh interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXI | 4-Mbit (256K × 16), 10 ns, 3.3 V, TSOP-44; higher ICC (180 mA vs. 180 mA for 71V416L10YG8) but same ISB1 (10 mA) | Same byte-enable architecture and timing; differs in pinout (non-JEDEC) and thermal profile | Preferred when TSOP-44 footprint is mandated and JEDEC pinout is not required |
| AS6C4008-10TIN | 4-Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44; identical pinout and JEDEC center-power layout, but higher ISB1 (25 mA) | Drop-in PCB replacement for 71V416L10YG8; requires validation of increased standby power in battery-sensitive designs | Valid for footprint-compatible upgrades where minor standby current increase is acceptable |
Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10YG8 offers JEDEC-standard SOJ-44 pinout for noise-sensitive layouts and lowest standby current (10 mA), making it optimal for thermally constrained or ultra-low-power industrial control applications.
Availability
71V416L10YG8 is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging controllers, and avionics display systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.
Supply support for 71V416L10YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416L10YG8 belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and precise timing predictability are mandatory.
FAQ
What is the operating temperature range for the 71V416L10YG8?
The 71V416L10YG8 is rated for commercial temperature operation from 0°C to +70°C. This grade is explicitly confirmed in the ordering information table, where "Y" denotes SOJ packaging and "G" indicates commercial temperature range-no industrial-grade variant exists for the YG8 suffix. The device's DC and AC specifications are guaranteed across this full range.
Does the 71V416L10YG8 require a refresh circuit or clock signal?
No, the 71V416L10YG8 is a fully static RAM and requires no refresh circuitry or clock input. Its asynchronous design relies solely on address, control (CS/OE/WE/BHE/BLE), and data signals. All internal circuitry is static CMOS, ensuring indefinite data retention as long as VDD is maintained within 3.0–3.6 V and ambient temperature remains within 0°C to +70°C.
What package type and pin count does the 71V416L10YG8 use?
The 71V416L10YG8 uses a 44-pin, 400-mil plastic SOJ (Small Outline J-lead) package, identified by code PBG44. Its pinout follows JEDEC standard MO-118 with center-placed VDD and VSS pins (pins 13, 32, 12, and 31) to minimize power supply noise-distinct from TSOP or BGA variants in the same family.
Can the 71V416L10YG8 be used with 5 V logic systems?
No, the 71V416L10YG8 is strictly a 3.3 V device with LVTTL-compatible I/O. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH min is 2.0 V-making it incompatible with 5 V TTL signaling. Interfacing with 5 V systems requires level translation, as direct connection risks overvoltage damage and violates recommended operating conditions.
How does byte enable functionality work on the 71V416L10YG8?
The 71V416L10YG8 uses two independent active-low inputs-BHE (high-byte enable) and BLE (low-byte enable)-to control 8-bit segments of the 16-bit I/O bus. When only BLE is low and BHE is high, only I/O0–I/O7 are written; when only BHE is low, only I/O8–I/O15 are written. Both must be low for full-word writes, enabling efficient partial updates without read-modify-write sequences.
71V416L10YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71V416L10YG8 FAQ
1.How can I place an order for 71V416L10YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L10YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L10YG8 reliable?
The price and inventory of 71V416L10YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L10YG8 is usually 5 days.
3.What payment methods are accepted for 71V416L10YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L10YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L10YG8?
71V416L10YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L10YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L10YG8?
For technical support, including 71V416L10YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L10YG8 requirements.
6.How does Aetrix verify that 71V416L10YG8 is sourced from the original manufacturer or authorized distributors?
All 71V416L10YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L10YG8 meets industry standards.
7.What is the process for return or replacement of 71V416L10YG8?
All 71V416L10YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L10YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L10YG8 part is unused and in its original packaging.
Return procedure for 71V416L10YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L10YG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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