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Renesas 71V416L10YGI
- Part No.:
- 71V416L10YGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V416L10YGI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,416
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Product details
Overview
71V416L10YGI from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), LVTTL-compatible I/Os, and JEDEC-standard center power/ground pinout for noise reduction - deployed in embedded controllers, network interface buffers, and real-time data acquisition systems.
For engineers reviewing the 71V416L10YGI datasheet, 71V416L10YGI pinout, 71V416L10YGI application, or 71V416L10YGI equivalent, key selection criteria include its 10 ns read cycle time, low standby current (10 mA max), SOJ-44 industrial-grade packaging, and byte-selectable write capability - critical for deterministic memory interfacing in space-constrained industrial control modules.
Technical Context
The 71V416L10YGI implements fully static asynchronous circuitry with no clocks or refresh required. Its architecture supports independent high- and low-byte writes via dedicated BHE and BLE inputs, enabling efficient 8-bit sub-word updates without full 16-bit bus contention.
It uses LVTTL-compatible bidirectional I/Os with guaranteed VOH ≥ 2.4 V (IOH = –4 mA) and VOL ≤ 0.4 V (IOL = 8 mA) under min VDD (3.0 V), ensuring robust signal integrity in mixed-voltage 3.3 V systems. Chip select (CS) and output enable (OE) operate independently, allowing precise output gating and multi-chip memory banking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) - supports 16-bit data bus interfaces without external width expansion. |
| Access Time (tAA) | 10 ns max - enables direct interfacing with 80–100 MHz microcontrollers without wait states. |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±10% regulation variation. |
| Standby Current (ISB1) | 10 mA max - reduces system-level power in sleep modes for battery-backed or energy-sensitive applications. |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including motor drives and factory automation PLCs. |
| Package | 44-pin, 400-mil plastic SOJ (PBG44) - surface-mount compatible with legacy PCB footprints and reflow assembly. |
| I/O Interface | LVTTL-compatible - ensures interoperability with FPGA I/O banks, ASIC memory controllers, and microprocessor address/data buses. |
Pinout & Package
71V416L10YGI is housed in a 44-pin, 400-mil plastic SOJ (PBG44) package with JEDEC-standard center power/ground pinout for reduced switching noise. Pin functions are validated per Renesas datasheet revision May 2021.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal multiplexing required. |
| CS | Chip Select | Active-low enable controlling device activation; allows multi-SRAM bank decoding. |
| OE | Output Enable | Active-low control for output drivers; decouples read data timing from CS for flexible bus arbitration. |
| WE | Write Enable | Active-low signal initiating write cycles; supports both CS- and WE-controlled write timing modes. |
| BHE / BLE | Byte Enable Inputs | Independent high- and low-byte write gating - enables 8-bit updates on 16-bit bus without data corruption. |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/Os with tristate control; eliminates need for external transceivers in synchronous designs. |
| VDD / VSS | Power / Ground | Dual center-placed VDD/VSS pins minimize ground bounce and improve signal integrity during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | 10 mA max ISB1 current - extends runtime in always-on industrial monitoring nodes. |
| JEDEC center VDD/VSS pinout | Reduced simultaneous switching noise (SSN) - improves signal integrity in dense PCB layouts. |
| Byte-selectable write capability | Independent BHE/BLE control - avoids full-word overwrites when only one byte changes, reducing bus traffic. |
| 10 ns access time at 3.3 V | Supports zero-wait-state operation with ARM9, ColdFire, and similar 80–100 MHz MCUs. |
| Industrial temperature qualification | –40°C to +85°C operation - meets EN 61000-6-2/6-4 and IEC 61850-3 requirements for harsh environments. |
Applications
| Industrial PLC Data Buffer | Network Packet Buffer |
|---|---|
Use Scenario: Real-time I/O scanning and cyclic process data exchange in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability, low-latency SRAM buffer storing input/output image tables and intermediate control variables. Use Value: 10 ns tAA and industrial temp rating ensure deterministic scan-cycle timing under thermal stress and EMI exposure. | Use Scenario: Temporary storage of Ethernet frames in switch fabric or gateway protocol stacks. IC Role / Device Role / Timing Role: Dual-port-capable buffer holding ingress/egress packet headers and payload fragments before DMA transfer. Use Value: Byte-enable writes allow header-only updates without rewriting full frame buffers, improving throughput efficiency. |
| Medical Imaging Frame Store | Avionics Sensor Cache |
Use Scenario: Intermediate pixel data buffering between analog front-end ADCs and FPGA-based image processing pipelines. IC Role / Device Role / Timing Role: Low-noise, single-supply SRAM providing glitch-free data capture during high-speed line-scan acquisition. Use Value: Center VDD/VSS pinout minimizes switching noise coupling into sensitive analog signal paths near the SRAM. | Use Scenario: Storing calibrated sensor outputs and health-monitoring telemetry in flight control units. IC Role / Device Role / Timing Role: Radiation-tolerant-adjacent memory holding time-critical status registers and fault logs. Use Value: 10 mA ISB1 enables extended safe-mode operation during partial power loss events without data retention failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 16 Mbit (1M × 16), 10 ns, 3.3 V, TSOP-44 - higher density but larger footprint and no SOJ option. | Suitable for designs requiring >4 Mbit capacity; not drop-in due to different pinout and address width (A0–A19). | Select only if memory expansion beyond 4 Mbit is confirmed and PCB layout allows TSOP-44 placement. |
| AS6C4008-10TIN | 4 Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44 - identical density and package, but higher ISB (25 mA) and commercial-only temp range (0°C to +70°C). | Acceptable for non-industrial environments where cost is prioritized over extended temperature support. | Choose only for cost-sensitive commercial designs without thermal or reliability constraints. |
Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10YGI uniquely combines industrial temperature rating, SOJ-44 compatibility, and 10 mA standby current - making it optimal for space- and power-constrained industrial edge nodes where long-term reliability is mandatory.
Availability
71V416L10YGI is available at Aetrix Electronics and suitable for industrial PLCs, network gateways, medical imaging subsystems, and avionics sensor modules requiring stable component supply across extended product lifecycles.
Supply support for 71V416L10YGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416L10YGI belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for deterministic, low-power, industrial-grade memory interfacing in resource-constrained embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V416L10YGI?
The 71V416L10YGI does not use a clock; it is an asynchronous SRAM. Its 10 ns access time (tAA) and 10 ns read cycle time (tRC) support reliable operation with microcontrollers and FPGAs running up to ~100 MHz without wait states. Maximum effective bandwidth depends on bus width and controller timing margins, not a fixed clock frequency.
Does the 71V416L10YGI support byte-wide writes only, or can it perform full 16-bit word writes?
The 71V416L10YGI supports both byte-wide and full 16-bit word writes. When BHE and BLE are both asserted low, a full 16-bit word write occurs. When only BHE or BLE is low, only the corresponding high or low byte is written - preserving the other byte's contents without requiring read-modify-write sequences.
Is the 71V416L10YGI RoHS-compliant and halogen-free?
Yes, the 71V416L10YGI is a green part per Renesas ordering information: the "G" suffix denotes compliance with RoHS Directive 2011/65/EU and halogen-free material content. This is confirmed in the May 2021 datasheet revision and applies to all package variants including the YGI SOJ-44 configuration.
Can the 71V416L10YGI be used with 5 V logic systems?
No, the 71V416L10YGI is strictly a 3.3 V device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V - incompatible with standard 5 V TTL or CMOS logic levels. Interfacing with 5 V systems requires level translation, such as dual-supply bus switches or discrete resistor-divider networks with appropriate drive strength.
What is the meaning of "L" in the part number 71V416L10YGI?
The "L" in 71V416L10YGI designates the low-power variant of the IDT71V416 family. Compared to the "S" (standard power) version, the "L" variant reduces dynamic operating current (ICC) and standby current (ISB/ISB1) - e.g., ISB1 is 10 mA max for 71V416L10YGI versus 20 mA max for the "S" grade - while maintaining identical timing and functional specifications.
71V416L10YGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71V416L10YGI FAQ
1.How can I place an order for 71V416L10YGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L10YGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L10YGI reliable?
The price and inventory of 71V416L10YGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L10YGI is usually 5 days.
3.What payment methods are accepted for 71V416L10YGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L10YGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L10YGI?
71V416L10YGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L10YGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L10YGI?
For technical support, including 71V416L10YGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L10YGI requirements.
6.How does Aetrix verify that 71V416L10YGI is sourced from the original manufacturer or authorized distributors?
All 71V416L10YGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L10YGI meets industry standards.
7.What is the process for return or replacement of 71V416L10YGI?
All 71V416L10YGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L10YGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L10YGI part is unused and in its original packaging.
Return procedure for 71V416L10YGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L10YGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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