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Renesas 71V416L10YGI8

Part No.:
71V416L10YGI8
Manufacturer:
Renesas
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
Aetrix71V416L10YGI8.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,207

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Product details

Overview

71V416L10YGI8 from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It serves as a non-refreshing, asynchronous memory buffer in real-time control systems requiring deterministic timing.

For engineers reviewing the 71V416L10YGI8 datasheet, 71V416L10YGI8 pinout, 71V416L10YGI8 application, or 71V416L10YGI8 equivalent, key selection criteria include byte-enable-controlled 16-bit data access, JEDEC-standard SOJ pinout, low-standby current (10 mA), and compatibility with legacy 3.3 V LVTTL bus interfaces.

Technical Context

This device implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual byte enable (BHE/BLE) for independent high- and low-byte access. Its address decoding supports 18-bit addressing (A0–A17) to resolve 256K words, with all inputs and outputs meeting LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V).

Timing is governed by three independent control paths: chip select (tACS = 10 ns), output enable (tOE = 5 ns), and byte enable (tBE = 5 ns), enabling flexible read/write sequencing without bus contention. The SOJ package features center-power/ground pinout to minimize switching noise during high-frequency I/O transitions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), supporting full-word or byte-aligned data transfers
Access Time10 ns (max), enabling 100 MHz burst-free operation in synchronous bus environments
Supply Voltage3.3 V ±10% (3.0–3.6 V), compatible with standard LVTTL logic rails
Standby Current10 mA (ISB1, max), critical for low-power hold modes in battery-backed systems
I/O InterfaceLVTTL-compatible bidirectional data (I/O0–I/O15), eliminating level-shifter requirements
Temperature RangeIndustrial: –40°C to +85°C, validated for embedded control and telecom infrastructure
Package44-pin, 400-mil plastic SOJ (PBG44), JEDEC-compliant footprint with center VDD/VSS

Pinout & Package

71V416L10YGI8 is housed in a 44-pin, 400-mil plastic SOJ (PBG44) package with JEDEC-standard center-power/ground pinout to reduce simultaneous switching noise. Pin 1 is located at the top-left corner of the top view, with pins numbered counter-clockwise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word decoding; no external address latching required
CSChip SelectActive-low enable controlling overall device activation; tACS = 10 ns ensures fast peripheral selection
OEOutput EnableActive-low control for output drivers; tOE = 5 ns enables tight timing with microcontroller wait-state logic
WEWrite EnableActive-low write strobe; tWP = 8 ns minimum allows short-cycle burst writes
BHE / BLEByte EnableIndependent high- and low-byte gating; enables 8-bit access without data bus splitting
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O with 8 mA sink capability; supports direct connection to 3.3 V microcontrollers
VDD / VSSPower / GroundCenter-placed VDD (pin 13) and VSS (pin 11) reduce power-ground loop inductance

Key Features

FeatureDesign Value
Low-power standby mode10 mA ISB1 (max) enables energy-efficient hold states in always-on industrial controllers
Dual byte enable architectureIndependent BHE/BLE control permits selective 8-bit writes without masking or software overhead
JEDEC center-power pinoutReduced ground bounce and supply noise during high-speed I/O transitions
Asynchronous static operationNo clock, refresh, or initialization sequence required-simplifies FPGA or MCU interface design
LVTTL-compatible I/ODirect interfacing with 3.3 V microcontrollers and FPGAs without level translation

Applications

Industrial PLC Data BufferTelecom Line Card Memory

Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory access latency is required between scan cycles.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer storing process image data; provides sub-10 ns read access to support 100+ kHz scan rates.

Use Value: Eliminates refresh overhead and guarantees worst-case 10 ns access, enabling tighter control loop timing margins.

Use Scenario: Packet header buffering in TDM-based telecom line cards operating in extended temperature environments.

IC Role / Device Role / Timing Role: High-reliability 16-bit data store for frame alignment and buffering; operates continuously across –40°C to +85°C.

Use Value: Industrial-grade qualification and low-ISB1 ensure stable operation under thermal cycling and unregulated power conditions.

Medical Imaging Subsystem CacheAvionics Sensor Interface Module

Use Scenario: Temporary storage of digitized analog sensor streams (e.g., ultrasound A-lines) before DSP processing.

IC Role / Device Role / Timing Role: Low-latency, byte-selectable memory for burst capture of time-critical waveform data.

Use Value: BHE/BLE enables efficient 8-bit sensor data packing without bus turnaround delays or glue logic.

Use Scenario: Interfacing discrete analog-to-digital converters and discrete I/O in DO-254-compliant avionics modules.

IC Role / Device Role / Timing Role: Deterministic, radiation-tolerant (non-volatile not required) memory for configuration and status registers.

Use Value: Fully static operation eliminates timing uncertainty from clocks or refresh, simplifying DO-254 verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-10ZSXI4-Mbit (256K × 16), 10 ns, 3.3 V, TSOP-II package; higher ICC (180 mA vs. 180 mA typ.) but same ISB1 (10 mA)Same industrial temp range; lacks SOJ option - requires PCB redesign if SOJ footprint is fixedSelect when TSOP-II layout exists and JEDEC SOJ is unavailable
AS6C4008-10TIN4-Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44; ISB1 = 25 µA (vs. 10 mA), but slower tCHZ (12 ns vs. 7 ns)Ultra-low standby power ideal for battery backup; unsuitable for high-speed burst reads due to longer output disableSelect only for battery-hold applications where tCHZ > 7 ns is acceptable

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416L10YGI8 uniquely balances industrial SOJ packaging, 10 ns access, and 10 mA standby current-making it optimal for space-constrained, thermally demanding control systems where pinout compatibility and deterministic timing are prioritized over ultra-low quiescent power.

Availability

71V416L10YGI8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging subsystems, and avionics sensor interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V416L10YGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416L family was designed specifically for high-reliability, asynchronous memory applications in industrial control and communications equipment where deterministic timing, low power, and JEDEC-standard packaging are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V416L10YGI8?

The 71V416L10YGI8 does not operate on a clock; it is an asynchronous SRAM. Its 10 ns access time supports effective bus frequencies up to 100 MHz in systems with zero wait-state timing. Maximum sustained throughput depends on system-level cycle time (tRC = 10 ns), not a clock signal-making it suitable for microcontroller, FPGA, and ASIC interfaces without clock domain constraints. The 71V416L10YGI8 achieves this using fully static CMOS design with no internal timing generator.

Does the 71V416L10YGI8 require external refresh circuitry?

No, the 71V416L10YGI8 is a true static RAM and requires no refresh circuitry, clocks, or periodic access to retain data. Its fully static asynchronous architecture maintains data indefinitely as long as VDD remains within specification (3.0–3.6 V) and ambient temperature stays within the industrial range (–40°C to +85°C). This eliminates refresh overhead and timing uncertainty-critical for safety-critical and real-time deterministic applications where the 71V416L10YGI8 is commonly deployed.

Can the 71V416L10YGI8 be used with 5 V logic systems?

No, the 71V416L10YGI8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V-making it incompatible with 5 V TTL or CMOS logic levels. Direct connection to 5 V systems risks damage or unreliable operation. If interfacing with 5 V controllers is required, a bidirectional level translator (e.g., TXB0108) must be used. The 71V416L10YGI8's I/O structure is optimized for 3.3 V signaling integrity, not mixed-voltage operation.

What is the function of the BHE and BLE pins on the 71V416L10YGI8?

The BHE (High Byte Enable) and BLE (Low Byte Enable) pins on the 71V416L10YGI8 provide independent gating of the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during read and write operations. When asserted low, each enables its respective byte path; both low enables full 16-bit word access. This eliminates the need for external byte masking logic or software bit manipulation-reducing interface complexity in microcontrollers and FPGAs. The 71V416L10YGI8 uses these pins to support efficient 8-bit peripheral interfacing without bus turnaround delays.

Is the 71V416L10YGI8 RoHS compliant and halogen-free?

Yes, the 71V416L10YGI8 is RoHS compliant and halogen-free, as confirmed by Renesas' "Green Parts" designation in the ordering information (suffix 'G' or 'GI'). The 'I' in YGI8 indicates industrial temperature grade, and the '8' denotes tape-and-reel packaging-both consistent with Renesas' green manufacturing standards. Material declarations and compliance documentation are available through Renesas' official product page for the 71V416L10YGI8, supporting environmental compliance in industrial and medical end equipment.

71V416L10YGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

71V416L10YGI8 FAQ

1.How can I place an order for 71V416L10YGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416L10YGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416L10YGI8 reliable?

The price and inventory of 71V416L10YGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L10YGI8 is usually 5 days.

3.What payment methods are accepted for 71V416L10YGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L10YGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416L10YGI8?

71V416L10YGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416L10YGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416L10YGI8?

For technical support, including 71V416L10YGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L10YGI8 requirements.

6.How does Aetrix verify that 71V416L10YGI8 is sourced from the original manufacturer or authorized distributors?

All 71V416L10YGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L10YGI8 meets industry standards.

7.What is the process for return or replacement of 71V416L10YGI8?

All 71V416L10YGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L10YGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416L10YGI8 part is unused and in its original packaging.

Return procedure for 71V416L10YGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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