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Renesas 71V416L12BE
- Part No.:
- 71V416L12BE
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L12BE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,381
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Product details
Overview
71V416L12BE from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It serves as a non-refreshing, fully static asynchronous memory buffer in embedded controllers, network interface buffers, and real-time data acquisition systems.
For engineers reviewing the 71V416L12BE datasheet, 71V416L12BE pinout, 71V416L12BE application, or 71V416L12BE equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), byte-enable-controlled 16-bit word access, 44-pin SOJ/TSOP or 48-ball BGA package options, and verified low-standby-current behavior (10 mA typical ISB1).
Technical Context
The 71V416L12BE implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual byte enable (BHE/BLE) with independent high- and low-byte write control. Its address decoding supports 18-bit addressing (A0–A17) for full 256K-word coverage, and all control inputs (CS, OE, WE, BHE, BLE) are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V.
Timing is defined by three independent access paths: chip-select–driven (tACS = 12 ns max), output-enable–driven (tOE = 6 ns max), and byte-enable–driven (tBE = 6 ns max). Output drivers support bidirectional 16-bit data flow (I/O0–I/O15) with VOH ≥ 2.4 V and VOL ≤ 0.4 V under specified load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 16-bit (4,194,304 bits), enabling direct 16-bit bus interfacing without external data multiplexing |
| Access Time (tAA) | 12 ns maximum at VDD = 3.0–3.6 V and TA = –40°C to +85°C, supporting 83 MHz burst read cycles |
| Supply Voltage | 3.3 V nominal (3.0–3.6 V range), compatible with LVTTL logic families and eliminating need for level shifters |
| Standby Current (ISB1) | 10 mA maximum in full static standby (CS high, no address change), critical for low-power hold modes |
| Input/Output Compatibility | LVTTL-compatible I/O with VIH ≥ 2.0 V, VIL ≤ 0.8 V, and 8 mA sink / 4 mA source drive strength |
| Operating Temperature | Industrial grade: –40°C to +85°C, validated across full voltage and timing specs per Renesas AC/DC tables |
| Package Options | 48-ball CABGA (BE48/BEG48), 44-pin TSOP Type II (PHG44), or 44-pin SOJ (PBG44); all 400-mil width or 9 mm × 9 mm footprint |
Pinout & Package
71V416L12BE is available in three industry-standard packages: 44-pin plastic SOJ (PBG44), 44-pin TSOP Type II (PHG44), and 48-ball CABGA (BE48/BEG48). The SOJ/TSOP variant uses a JEDEC-standard center power/ground pinout to minimize simultaneous switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; no internal latching required |
| CS | Chip Select | Active-low enable controlling full device activation; tACS = 12 ns defines minimum CS-to-data-valid delay |
| OE | Output Enable | Active-low control for output drivers only; enables fast read access independent of CS (tOE = 6 ns) |
| WE | Write Enable | Active-low signal initiating write cycles; tWP = 8 ns minimum pulse width ensures reliable data capture |
| BHE / BLE | Byte Enable Inputs | Independent high- and low-byte controls allowing 8-bit partial writes without disturbing adjacent bytes |
| I/O0–I/O15 | Bidirectional Data I/O | 16-bit LVTTL-compliant data bus; direction controlled implicitly by WE and OE states |
| VDD / VSS | Power / Ground | Center-placed VDD/VSS pins (SOJ/TSOP) reduce ground bounce and improve signal integrity during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| Low-Power Standby Mode | ISB1 = 10 mA max (static), enabling energy-efficient hold states in battery-backed or always-on systems |
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by symmetrically distributing VDD/VSS across package center, improving signal integrity |
| Dual Byte Write Control | BHE/BLE allow selective 8-bit writes to upper or lower byte without read-modify-write overhead |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage rails or level translators when interfacing with LVTTL microcontrollers and FPGAs |
| Industrial Temperature Range | Validated operation from –40°C to +85°C across all AC/DC parameters, suitable for harsh-environment deployments |
Applications
| Industrial PLC Data Buffers | Network Packet Buffering |
|---|---|
Use Scenario: Storing real-time I/O status and command history in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous static RAM providing zero-wait-state 16-bit data storage with 12 ns access for cycle-consistent register updates. Use Value: Eliminates refresh overhead and guarantees deterministic latency under varying CPU load, critical for hard real-time control loops. |
Use Scenario: Temporary storage of Ethernet frames in switch ASIC support logic before forwarding or filtering decisions. IC Role / Device Role / Timing Role: High-speed buffer holding up to four full 1500-byte frames (with external address management) using byte-enable granularity. Use Value: Enables concurrent read/write via BHE/BLE to separate header/payload sections, reducing frame processing latency by avoiding full-word transfers. |
| Medical Imaging Frame Stores | Test Equipment Pattern Memory |
Use Scenario: Capturing raw sensor data from ultrasound or MRI front-ends prior to DSP-based reconstruction. IC Role / Device Role / Timing Role: Non-refreshing memory bank capturing parallel 16-bit ADC streams at sustained rates up to 83 MS/s. Use Value: Maintains data coherency across multi-channel acquisition without refresh-induced jitter or bus contention. |
Use Scenario: Storing stimulus/response patterns in automated test equipment for semiconductor functional validation. IC Role / Device Role / Timing Role: Deterministic-access memory delivering preloaded test vectors with sub-12 ns address-to-data stability. Use Value: Supports precise timing margins in high-speed digital test vectors, ensuring setup/hold compliance at 83 MHz clock domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4-Mbit (256K × 16), 45 ns access, 3.3 V, 44-pin TSOP; higher access time, lower power in standby (3 µA) | Targeted at ultra-low-power hold modes rather than high-speed burst reads | Select when standby current dominates system budget and 45 ns latency is acceptable |
| AS6C4008-12BIN | 4-Mbit (256K × 16), 12 ns access, 3.3 V, 44-pin SOP; identical speed but lacks BHE/BLE and center VDD/VSS pinout | Suitable for cost-sensitive designs where byte-enable control and noise immunity are secondary | Choose when board layout simplicity outweighs noise robustness and partial-write efficiency |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-12BIN, the 71V416L12BE uniquely combines 12 ns access, industrial temperature rating, JEDEC noise-optimized pinout, and true dual-byte write capability-making it optimal for deterministic, high-throughput embedded buffering where timing predictability and signal integrity are critical.
Availability
71V416L12BE is available at Aetrix Electronics and suitable for industrial PLC data buffers, network packet buffering, medical imaging frame stores, and test equipment pattern memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V416L12BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V416L12BE belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency, non-refreshing memory applications in real-time embedded systems.
FAQ
What is the maximum operating temperature range for the 71V416L12BE?
The 71V416L12BE is rated for industrial temperature operation from –40°C to +85°C. All AC and DC electrical specifications-including 12 ns access time, 10 mA ISB1 standby current, and LVTTL input thresholds-are guaranteed across this full range per Renesas datasheet Table 5 and Table 10.
Does the 71V416L12BE require a refresh circuit or clock signal?
No, the 71V416L12BE is a fully static RAM and requires no refresh circuitry or clock signal. Its asynchronous design allows indefinite data retention as long as VDD is applied and CS remains high during standby, making it ideal for systems with irregular or infrequent memory access patterns.
Which packages are available for the 71V416L12BE?
The 71V416L12BE is offered in three RoHS-compliant packages: 44-pin plastic SOJ (PBG44), 44-pin TSOP Type II (PHG44), and 48-ball CABGA (BE48/BEG48). Package codes are explicitly listed in Renesas' Ordering Information table (Document 3624 tbl 12a) for the "L12" speed grade.
How does the byte enable functionality work on the 71V416L12BE?
The 71V416L12BE uses separate BHE (high byte enable) and BLE (low byte enable) inputs to control 8-bit write operations. When BHE is low and BLE is high, only I/O8–I/O15 are written; when BLE is low and BHE is high, only I/O0–I/O7 are written-enabling efficient partial-word updates without read-modify-write sequences.
Is the 71V416L12BE pin-compatible with earlier IDT versions?
Yes, the 71V416L12BE maintains full pin, package, and functional compatibility with the original IDT71V416L12BE, including identical pinouts for SOJ, TSOP, and BGA variants, matching AC/DC timing, and consistent truth table behavior-ensuring drop-in replacement in legacy designs rebranded under Renesas.
71V416L12BE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L12BE FAQ
1.How can I place an order for 71V416L12BE through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L12BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L12BE reliable?
The price and inventory of 71V416L12BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L12BE is usually 5 days.
3.What payment methods are accepted for 71V416L12BE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L12BE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L12BE?
71V416L12BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L12BE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L12BE?
For technical support, including 71V416L12BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L12BE requirements.
6.How does Aetrix verify that 71V416L12BE is sourced from the original manufacturer or authorized distributors?
All 71V416L12BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L12BE meets industry standards.
7.What is the process for return or replacement of 71V416L12BE?
All 71V416L12BE units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L12BE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L12BE part is unused and in its original packaging.
Return procedure for 71V416L12BE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L12BE Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
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