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Renesas 71V416L12BEG
- Part No.:
- 71V416L12BEG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L12BEG.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,354
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Product details
Overview
71V416L12BEG from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in real-time embedded control buffers and legacy system memory expansion.
For engineers reviewing the 71V416L12BEG datasheet, 71V416L12BEG pinout, 71V416L12BEG application, or 71V416L12BEG equivalent, key selection criteria include industrial-grade timing consistency, low-standby current (10 mA), BGA48 package compatibility, and byte-enable control for partial-word access in space-constrained designs.
Technical Context
The 71V416L12BEG implements fully static asynchronous logic with no clocks or refresh required. Its architecture includes independent high-byte (BHE) and low-byte (BLE) enable inputs, dual output-enable (OE) and chip-select (CS) control, and bidirectional LVTTL I/O drivers supporting 8 mA sink / –4 mA source capability.
Timing is defined by three independent control paths: CS-driven, OE-driven, and byte-enable–driven write/read cycles. All AC parameters-including tAA (12 ns), tCLZ (4 ns), and tOHZ (6 ns)-are guaranteed over the full industrial temperature range and specified under standard LVTTL load conditions (30 pF, 50 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) - supports 16-bit data bus systems without external width expansion. |
| Access Time (tAA) | 12 ns - enables direct interface with 80 MHz bus controllers without wait states. |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails; no level-shifting required. |
| Standby Current (ISB1) | 10 mA - reduces system power in idle states while retaining data integrity. |
| I/O Compatibility | LVTTL - ensures interoperability with FPGA I/O banks, microcontroller ports, and ASIC interfaces at 3.3 V. |
| Operating Temperature | –40°C to +85°C - qualified for industrial automation, transportation, and base station control applications. |
| Package | 48-ball BGA (BEG48), 9 mm × 9 mm - supports high-density PCB layouts with fine-pitch routing. |
Pinout & Package
71V416L12BEG is housed in a 48-ball grid array (BEG48) package per JEDEC MO-245, 9 mm × 9 mm body, 0.8 mm ball pitch. Pin functions follow standard 256K×16 SRAM layout with dedicated address (A0–A17), data (I/O0–I/O15), and control (CS, WE, OE, BHE, BLE) terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selects one of 256K words; A17 is MSB for full 4-Mbit addressing. |
| I/O0–I/O7 | Low-Byte Data I/O | Bi-directional 8-bit port enabled only when BLE = L; isolated during high-byte operations. |
| I/O8–I/O15 | High-Byte Data I/O | Bi-directional 8-bit port enabled only when BHE = L; operates independently of low-byte path. |
| CS | Chip Select | Active-low global enable; device enters standby (high-Z I/O, low ICC) when CS = H. |
| WE | Write Enable | Active-low write strobe; controls data latching into memory array when CS and byte enables are active. |
| OE | Output Enable | Active-low output driver control; allows read data to appear on I/O pins without affecting write functionality. |
| BHE | High-Byte Enable | Active-low signal enabling I/O8–I/O15 during read/write; decouples high/low byte access. |
| BLE | Low-Byte Enable | Active-low signal enabling I/O0–I/O7 during read/write; supports partial-word transfers. |
| VDD | Power Supply | 3.3 V core and I/O supply; requires local 0.1 µF ceramic decoupling per VDD pin pair. |
| VSS | Ground | Reference return for all signals; two dedicated VSS balls minimize ground bounce in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS across package center, critical for stable 12 ns timing in dense layouts. |
| Independent Byte Enables (BHE/ BLE) | Enables true 8-bit sub-word access without external logic-reducing bus contention and simplifying glueless interfacing with 8-bit peripherals. |
| Low Standby Current (ISB1 = 10 mA) | Minimizes quiescent power in always-on industrial modules where memory remains powered but inactive for extended periods. |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage regulators or level shifters, lowering BOM cost and board area in mixed-signal embedded systems. |
| LVTTL-Compatible I/O | Guarantees voltage-level interoperability with industry-standard 3.3 V logic families (e.g., Xilinx Spartan-7, NXP i.MX RT, TI C2000) without external termination. |
Applications
| Industrial PLC Data Buffer | Legacy Bus Memory Expansion |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data must be buffered between scan cycles without CPU intervention. IC Role / Device Role / Timing Role: Asynchronous static RAM providing zero-wait-state storage for 256K × 16-bit process image; accessed via parallel bus under deterministic cycle timing. Use Value: 12 ns access ensures <100 ns total read/write latency, meeting hard real-time deadlines in motion control loops. | Use Scenario: Upgrading memory capacity in aging industrial HMIs using ISA or VMEbus architectures with 16-bit data paths. IC Role / Device Role / Timing Role: Drop-in replacement for obsolete 256K×16 SRAMs; retains identical pinout and timing behavior while improving power efficiency. Use Value: 10 mA ISB1 cuts standby power by >50% vs. older 5 V SRAMs, extending thermal life in sealed enclosures. |
| Telecom Line Card Frame Buffer | Avionics Display Controller Cache |
Use Scenario: Storing packetized voice/video frames in carrier-grade TDM line cards requiring deterministic latency and data retention during brief power dips. IC Role / Device Role / Timing Role: Non-refreshed frame buffer holding up to 256K samples; accessed via DMA engine with burst-aligned reads/writes. Use Value: Fully static design guarantees data retention at zero clock frequency-critical for fail-safe recovery after brownout events. | Use Scenario: Caching graphics primitives in certified avionics displays where radiation tolerance and long-term reliability are mandatory. IC Role / Device Role / Timing Role: High-reliability SRAM serving as display list cache; operated within strict DO-254 design assurance level A constraints. Use Value: Industrial temperature rating (–40°C to +85°C) and Renesas qualification support extended field life in unpressurized cabin environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4-Mbit (256K×16), 45 ns access, 3.3 V, SOIC-44 package; higher standby current (25 mA). | Targeted at cost-sensitive, non-real-time applications where speed is secondary to footprint simplicity. | Select when board space permits SOIC and timing budget allows >3× slower access than 71V416L12BEG. |
| AS6C4008-12TIN | 4-Mbit (256K×16), 12 ns access, 3.3 V, TSOP-44 package; no byte-enable pins (word-only access). | Suitable for systems with fixed 16-bit data paths and no requirement for partial-word writes. | Choose when eliminating byte control logic simplifies design and BGA assembly is unavailable. |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-12TIN, the 71V416L12BEG uniquely combines industrial-grade 12 ns timing, independent byte enables, and BGA48 packaging-enabling compact, low-power, deterministic memory subsystems where partial-word access and thermal robustness are essential.
Availability
71V416L12BEG is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom line card frame storage, and avionics display controller caching requiring stable component supply across multi-year production cycles.
Supply support for 71V416L12BEG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The 71V416L12BEG belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency, and low-power memory in industrial control and communications infrastructure.
FAQ
What is the maximum operating frequency supported by the 71V416L12BEG?
The 71V416L12BEG does not operate on a clock; it is an asynchronous SRAM. Its 12 ns access time (tAA) supports effective bus frequencies up to ~80 MHz in systems with zero wait-state timing, assuming address setup/hold and control signal propagation delays are met. Maximum sustained throughput depends on system-level timing margins-not internal clocking.
Does the 71V416L12BEG require external refresh circuitry?
No. The 71V416L12BEG is a fully static RAM and contains no dynamic storage elements. It retains data indefinitely as long as VDD is applied and CS remains asserted (low), with no clocks, timers, or external refresh signals needed-making it ideal for fail-safe and ultra-low-jitter applications.
Can the 71V416L12BEG be used with 5 V logic interfaces?
No. The 71V416L12BEG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic risks damage or undefined behavior; level translation is mandatory for mixed-voltage systems.
What is the function of the NC pins on the 71V416L12BEG BEG48 package?
The 71V416L12BEG BEG48 package has no NC (No Connect) pins. All 48 balls are assigned: 18 address, 16 data, 5 controls (CS, WE, OE, BHE, BLE), 2 VDD, 2 VSS, and 5 reserved for future use or internal test-per Renesas BEG48 pin map revision 6.42. No ball may be left floating or tied to voltage without verification in latest package drawing.
How does the 71V416L12BEG handle simultaneous byte and word access requests?
The 71V416L12BEG resolves simultaneous BHE and BLE asserts as a full 16-bit word operation. When both byte enables are low, I/O0–I/O15 drive/receive concurrently. If only one is low, only its associated 8-bit lane activates-no arbitration or conflict; the design inherently supports atomic partial-word writes without external gating logic.
71V416L12BEG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L12BEG FAQ
1.How can I place an order for 71V416L12BEG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L12BEG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L12BEG reliable?
The price and inventory of 71V416L12BEG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L12BEG is usually 5 days.
3.What payment methods are accepted for 71V416L12BEG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L12BEG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L12BEG?
71V416L12BEG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L12BEG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L12BEG?
For technical support, including 71V416L12BEG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L12BEG requirements.
6.How does Aetrix verify that 71V416L12BEG is sourced from the original manufacturer or authorized distributors?
All 71V416L12BEG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L12BEG meets industry standards.
7.What is the process for return or replacement of 71V416L12BEG?
All 71V416L12BEG units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L12BEG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L12BEG part is unused and in its original packaging.
Return procedure for 71V416L12BEG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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