Renesas 71V416L12BEG8

Overview

71V416L12BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, and LVTTL-compatible I/Os. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory control in embedded systems requiring deterministic timing and low standby current. Used in industrial networking controllers and real-time data buffering.

For engineers reviewing the 71V416L12BEG8 datasheet, 71V416L12BEG8 pinout, 71V416L12BEG8 application, or 71V416L12BEG8 equivalent, key selection criteria include its 12 ns read cycle time, 10 µA full-standby current, JEDEC-compliant SOJ/TSOP/BGA pinout, and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V416L12BEG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic memory access. Its dual-byte enable architecture enables independent 8-bit writes without affecting adjacent bytes, while the center-power/ground pinout reduces switching noise in dense PCB layouts.

Operation is controlled via three independent enable signals: CS governs device selection, OE controls output driver activation, and WE determines write direction; BHE/BLE further gate high/low byte paths. All timing parameters-including tAA = 12 ns, tRC = 12 ns, and tOE = 6 ns-are guaranteed across the industrial temperature range.

Key Specifications

Pinout & Package

71V416L12BEG8 is housed in a 48-ball fine-pitch ball grid array (BEG48) package with 0.8 mm pitch and 9 mm × 9 mm body size. Pin assignment follows JEDEC-standard BGA layout with power/ground distributed across central rows to minimize simultaneous switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with CY62167EV30LL-45ZSXI and AS6C4008-12BIN, the 71V416L12BEG8 delivers identical 12 ns performance in a space-saving 48-ball BGA while offering lower standby current (10 µA vs. 25 µA typical) and industrial temperature assurance-making it optimal for next-gen compact, thermally demanding embedded designs.

Availability

71V416L12BEG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics, and rugged network infrastructure requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature compliance.

Supply support for 71V416L12BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416L12BEG8 belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in mission-critical industrial and transportation systems.

FAQ

What is the maximum guaranteed access time for the 71V416L12BEG8?

The 71V416L12BEG8 has a maximum guaranteed address access time (tAA) of 12 ns across the full industrial temperature range (–40°C to +85°C), as specified in the AC Electrical Characteristics table. This value is production-tested and applies to all operating conditions within the recommended VDD (3.0 V to 3.6 V) and temperature limits. The 71V416L12BEG8 achieves this timing without requiring clocks or refresh cycles due to its fully static architecture.

Does the 71V416L12BEG8 support byte-level write operations?

Yes, the 71V416L12BEG8 supports independent byte-level writes via dedicated BHE (high byte enable) and BLE (low byte enable) inputs. When BHE is asserted low and BLE is high, only I/O8–I/O15 are written; conversely, asserting BLE low and BHE high writes only I/O0–I/O7. This capability is confirmed in the Truth Table and Functional Block Diagram, and enables efficient handling of mixed-width data structures without overwriting adjacent bytes. The 71V416L12BEG8 implements this using separate write drivers per byte lane.

What package type does the 71V416L12BEG8 use, and what are its mechanical dimensions?

The 71V416L12BEG8 uses a 48-ball fine-pitch ball grid array (BEG48) package with a 9 mm × 9 mm body size and 0.8 mm ball pitch. This package is distinct from the SOJ and TSOP variants in the same family and is documented in the Pin Configurations – BGA(1) section. The BEG48 variant provides higher I/O density and improved thermal performance compared to leaded packages, and is suitable for automated SMT assembly with standard BGA reflow profiles. The 71V416L12BEG8's pinout follows JEDEC MO-245 standards.

Is the 71V416L12BEG8 compatible with 3.3 V LVTTL logic families?

Yes, the 71V416L12BEG8 features LVTTL-compatible inputs and outputs, with VIH(min) = 2.0 V and VOH(min) = 2.4 V at VDD = 3.0 V, matching standard 3.3 V LVTTL thresholds. Its I/Os drive ±8 mA and tolerate input voltages from –0.3 V to VDD + 0.3 V, ensuring robust interoperability with FPGAs, microcontrollers, and ASICs using 3.3 V LVTTL signaling. This compatibility is explicitly stated in the DC Electrical Characteristics table and reinforced in the Description section. The 71V416L12BEG8 requires no external level-shifting circuitry when interfaced with LVTTL devices.

What is the full standby current (ISB1) specification for the 71V416L12BEG8?

The full standby current (ISB1) for the 71V416L12BEG8 is guaranteed at ≤10 µA maximum under static conditions (f = 0), with CS > VHC and outputs open, at VDD = max (3.6 V) and over the full industrial temperature range. This parameter reflects true static leakage with all internal circuitry gated off-distinct from dynamic standby (ISB). The low ISB1 enables energy-efficient sleep modes in battery-powered or thermally constrained applications. This value is verified per the DC Electrical Characteristics table and applies specifically to the 71V416L12BEG8 variant.