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Renesas 71V416L12BEI
- Part No.:
- 71V416L12BEI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L12BEI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,803
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Product details
Overview
71V416L12BEI from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, industrial temperature range (–40°C to +85°C), and JEDEC-compliant center-power/ground pinout. It serves as a fast, asynchronous, byte-selectable memory buffer in embedded controllers, network interface cards, and real-time data acquisition systems.
For engineers reviewing the 71V416L12BEI datasheet, 71V416L12BEI pinout, 71V416L12BEI application, or 71V416L12BEI equivalent, key selection criteria include its low-power standby current (10 mA max), LVTTL-compatible I/Os, dual byte enable (BHE/BLE), and 48-ball BGA (BE48) package with 9 mm × 9 mm footprint - critical for space-constrained industrial PCBs.
Technical Context
The 71V416L12BEI implements fully static asynchronous circuitry with no clocks or refresh required. Its architecture supports independent high- and low-byte write control via dedicated BHE and BLE inputs, enabling efficient 8-bit sub-word writes without external logic.
It features three distinct timing modes: CS-controlled, OE-controlled, and byte-enable-controlled read/write cycles, each with guaranteed timing parameters (e.g., tAA = 12 ns, tRC = 12 ns, tOE = 6 ns). All I/Os are bidirectional and LVTTL-compatible, with input/output leakage ≤5 µA and VOH ≥2.4 V at –4 mA load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), enabling direct 16-bit bus interfacing without data multiplexing |
| Access Time (tAA) | 12 ns maximum - defines minimum address-to-data-valid delay for deterministic real-time response |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±10% regulation variation |
| Standby Current (ISB1) | 10 mA maximum - enables ultra-low power retention during system sleep in industrial edge nodes |
| Operating Temperature | –40°C to +85°C - qualified for uncontrolled industrial environments including factory automation and transportation systems |
| Package | 48-ball BGA (BE48), 9 mm × 9 mm - provides compact, thermally efficient mounting with 0.8 mm ball pitch |
| I/O Interface | LVTTL-compatible bidirectional data (I/O0–I/O15), supporting seamless integration with FPGA and microcontroller 3.3 V I/O banks |
Pinout & Package
71V416L12BEI is housed in a 48-ball grid array (BE48) package with 9 mm × 9 mm body size and 0.8 mm ball pitch. Pin functions follow JEDEC-standard center-power/ground layout optimized for noise reduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address latching required |
| CS | Chip Select | Active-low enable controlling device activation; must be stable before address setup (tAS = 0 ns) |
| WE | Write Enable | Active-low signal initiating write cycles; controls data direction and memory cell write gating |
| OE | Output Enable | Active-low signal enabling output drivers; allows output disable independent of CS for bus sharing |
| BHE / BLE | Byte Enable (High/Low) | Independent 8-bit write control: BHE enables I/O8–I/O15, BLE enables I/O0–I/O7 |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; transitions between input and output states automatically per cycle control |
| VDD | Power Supply | 3.3 V core supply; two dedicated VDD balls (pins A5, E1) reduce IR drop and switching noise |
| VSS | Ground | Ground reference; four VSS balls (pins D1, D5, E5, H1) provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by symmetrically distributing VDD/VSS pins around the die perimeter |
| Low-Power Standby Mode | 10 mA ISB1 current enables >10-year battery-backed retention in industrial logging applications |
| Dual Byte Write Control | Eliminates need for external byte-mask logic when interfacing with 8-bit peripherals or legacy controllers |
| Asynchronous Operation | No clock, PLL, or refresh circuitry required - simplifies timing design and reduces system-level jitter sensitivity |
| LVTTL-Compatible I/Os | Direct connection to Xilinx Artix-7, Intel MAX 10, and Renesas RA6M4 MCU I/O banks without level-shifting |
Applications
| Industrial PLC Memory Buffer | Network Packet Buffer |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state read/write access for deterministic cyclic execution at 10 ms scan intervals. Use Value: 12 ns tAA and industrial temperature rating ensure consistent latency across thermal cycling, eliminating timing margin uncertainty in safety-critical control loops. |
Use Scenario: Temporary storage of Ethernet frame payloads in Layer 2 switches and industrial gateways prior to forwarding or deep packet inspection. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory buffer interfacing directly with MAC controller's 16-bit data bus. Use Value: Dual byte enables (BHE/BLE) allow partial writes of TCP header fields without disturbing payload data, reducing bus arbitration overhead by up to 40%. |
| Medical Imaging Frame Store | Avionics Data Recorder |
|
Use Scenario: Capturing raw sensor frames from ultrasound transducer arrays before compression and transmission to host processors. IC Role / Device Role / Timing Role: Burst-capable static RAM acting as first-stage frame buffer with deterministic 12 ns access for pixel pipeline synchronization. Use Value: 4-Mbit density and 3.3 V operation meet IEC 60601-1 creepage/clearance requirements while supporting 100+ MB/s sustained write throughput. |
Use Scenario: Non-volatile event logging in flight data recorders where power interruption may occur during turbulence or emergency shutdown. IC Role / Device Role / Timing Role: Low-power SRAM holding last 30 seconds of critical telemetry before backup to flash upon power loss detection. Use Value: 10 mA ISB1 standby current extends hold-up capacitor life to >200 ms, satisfying DO-160 Section 22 crash-safety power-fail timing mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZSXI | 55 ns access time, 32-pin SOIC package, 256K × 16 organization, 2.2–5.5 V supply | Lower speed and larger footprint; suitable only for non-real-time buffering where PCB area is unconstrained | Select only if 12 ns timing is not required and through-hole or SOIC assembly is preferred over BGA. |
| IS61LV25616AL-12MLI | 12 ns access, 44-pin TSOP-II package, same 256K × 16 density, but higher ISB1 (25 mA) | Same timing performance but larger board area and inferior thermal dissipation vs. BE48 BGA | Choose only if BGA rework capability is unavailable and thermal derating above 70°C is not required. |
Compared with CY62148EV30LL-45ZSXI and IS61LV25616AL-12MLI, the 71V416L12BEI delivers superior thermal performance and minimal PCB footprint due to its 9 mm × 9 mm BGA, while maintaining identical 12 ns timing and lower standby current - making it optimal for dense, thermally demanding industrial modules.
Availability
71V416L12BEI is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging subsystems, and avionics data loggers requiring stable component supply across extended product lifecycles.
Supply support for 71V416L12BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The 71V416L12BEI belongs to Renesas' legacy high-speed CMOS SRAM family, engineered for deterministic, low-latency memory interfacing in mission-critical embedded systems where refresh-free operation and industrial-grade reliability are mandatory.
FAQ
What is the maximum operating frequency supported by the 71V416L12BEI?
The 71V416L12BEI does not operate on a clock; it is an asynchronous SRAM. Its maximum effective bandwidth is determined by its 12 ns access time and 12 ns cycle time (tRC), enabling up to 83.3 MHz random-access throughput on a 16-bit bus. This translates to ~1.33 Gbps peak data rate under ideal burst conditions.
Does the 71V416L12BEI require external refresh circuitry?
No, the 71V416L12BEI is a fully static RAM and requires no refresh cycles or external refresh control. Its internal latches retain data indefinitely as long as VDD remains within 3.0–3.6 V and ambient temperature stays within –40°C to +85°C - a key advantage over DRAM in deterministic real-time systems.
Can the 71V416L12BEI be used with 5 V logic interfaces?
No, the 71V416L12BEI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH threshold is 2.0 V minimum. Direct connection to 5 V logic will exceed ratings and cause permanent damage. Level translation is mandatory for mixed-voltage systems.
What is the ball-out configuration for the BE48 package of the 71V416L12BEI?
The 71V416L12BEI uses the BE48 (48-ball CABGA) package with a 6 × 8 grid arrangement. Key allocations include VDD on A5 and E1, VSS on D1, D5, E5, and H1, A0–A17 across rows A–H columns 1–3 and 6–8, and I/O0–I/O15 distributed across perimeter balls to minimize crosstalk - full mapping is in Renesas document 3624 tbl 11.
How does the 71V416L12BEI handle partial writes using byte enables?
The 71V416L12BEI uses active-low BHE and BLE signals to independently gate high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes. When only BLE is asserted, only the lower 8 bits are written; when only BHE is asserted, only the upper 8 bits update - preserving the complementary byte without read-modify-write overhead.
71V416L12BEI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L12BEI FAQ
1.How can I place an order for 71V416L12BEI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L12BEI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L12BEI reliable?
The price and inventory of 71V416L12BEI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L12BEI is usually 5 days.
3.What payment methods are accepted for 71V416L12BEI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L12BEI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L12BEI?
71V416L12BEI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L12BEI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L12BEI?
For technical support, including 71V416L12BEI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L12BEI requirements.
6.How does Aetrix verify that 71V416L12BEI is sourced from the original manufacturer or authorized distributors?
All 71V416L12BEI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L12BEI meets industry standards.
7.What is the process for return or replacement of 71V416L12BEI?
All 71V416L12BEI units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L12BEI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L12BEI part is unused and in its original packaging.
Return procedure for 71V416L12BEI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L12BEI Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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