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Renesas 71V416L12PHGI8
- Part No.:
- 71V416L12PHGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
71V416L12PHGI8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,099
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Product details
Overview
71V416L12PHGI8 from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features LVTTL-compatible bidirectional I/O, separate byte enables (BHE/BLE), and JEDEC-standard center power/ground pinout for noise reduction - deployed in embedded control, industrial PLCs, and legacy telecom interface buffers.
For engineers reviewing the 71V416L12PHGI8 datasheet, 71V416L12PHGI8 pinout, 71V416L12PHGI8 application, or 71V416L12PHGI8 equivalent, key selection criteria include its 12 ns read cycle time, low standby current (ISB = 45 mA max at fMAX), TSOP Type II package compatibility, and byte-selectable write capability for partial-word updates without bus contention.
Technical Context
This asynchronous SRAM uses fully static CMOS circuitry-no clocks or refresh required-and supports three independent write control modes: chip-select–driven, output-enable–inhibited, and byte-enable–gated. Its dual-byte enable architecture allows independent 8-bit writes to upper (I/O8–I/O15) and lower (I/O0–I/O7) data lanes while maintaining full 16-bit read capability.
The device implements JEDEC-compliant pinout with VDD/VSS centered on pins 13/14 (SOJ/TSOP) to minimize simultaneous switching noise. All timing parameters-including tAA (12 ns), tOE (6 ns), and tCHZ (6 ns)-are guaranteed across the full industrial temperature range under 3.0–3.6 V supply conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 12 ns - determines minimum address-to-data valid delay in read cycles |
| Supply Voltage | 3.0–3.6 V - compatible with 3.3 V LVTTL logic families without level shifting |
| Standby Current (ISB) | 45 mA max at fMAX - enables low-power hold mode during processor idle states |
| Operating Temperature | –40°C to +85°C - qualified for industrial automation and base station control environments |
| Package | 44-pin TSOP Type II (PHG44), 400-mil body - surface-mount compatible with standard reflow profiles |
| I/O Interface | LVTTL-compatible bidirectional data (I/O0–I/O15) - direct connection to FPGA/CPLD I/O banks |
Pinout & Package
71V416L12PHGI8 is housed in a 44-pin, 400-mil TSOP Type II (PHG44) package with JEDEC-standard center power/ground layout. Pin 13 = VDD, Pin 14 = VSS, minimizing ground bounce and improving signal integrity in high-speed parallel bus applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching |
| CS | Chip Select | Active-low enable controlling entire memory array activation; must be stable before WE/OE transitions |
| OE | Output Enable | Active-low control enabling data output drivers; operates independently of WE for read-only access |
| WE | Write Enable | Active-low signal initiating write cycles; combined with BHE/BLE to gate byte writes |
| BHE | High-Byte Enable | Active-low control enabling writes to I/O8–I/O15 only; used for upper 8-bit partial writes |
| BLE | Low-Byte Enable | Active-low control enabling writes to I/O0–I/O7 only; used for lower 8-bit partial writes |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; tri-stated when CS high or OE high; no internal direction control |
| VDD | Power Supply | +3.3 V supply pin (Pin 13); center-placed to reduce simultaneous switching noise |
| VSS | Ground | Ground reference (Pin 14); adjacent to VDD per JEDEC noise-reduction layout |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | ISB1 = 10 µA max (static) - reduces system power during extended idle periods |
| Byte-selectable write architecture | Independent BHE/BLE controls allow 8-bit writes without disturbing adjacent bytes |
| JEDEC center VDD/VSS pinout | Pins 13/14 placement minimizes ground bounce and improves signal integrity on dense PCBs |
| Asynchronous operation | No clock or refresh required - simplifies timing design in microcontroller-based systems |
| LVTTL-compatible I/O | Direct interface with 3.3 V FPGAs, ASICs, and microprocessors without level translators |
Applications
| Industrial PLC Data Buffers | Legacy Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing real-time I/O status and configuration registers in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state data storage for fast scan-cycle execution. Use Value: 12 ns access time ensures deterministic response within 100 µs PLC scan windows; industrial temp rating guarantees reliability at 85°C ambient. |
Use Scenario: Buffering packet header metadata and channel assignment tables in TDM-based telecom line cards. IC Role / Device Role / Timing Role: High-speed parallel memory interfacing directly with TI C6000 DSPs via EMIF bus. Use Value: Byte-enable capability allows efficient 8-bit header updates without overwriting payload fields stored in adjacent locations. |
| Medical Imaging Control Panels | Avionics Display Interface Memory |
|
Use Scenario: Holding GUI bitmap tiles and button state maps in radiation-tolerant medical display subsystems. IC Role / Device Role / Timing Role: Non-volatile-critical SRAM serving as frame buffer overlay memory for ARM Cortex-M7 HMI controllers. Use Value: Low ISB1 (10 µA) extends battery backup runtime during AC power loss; TSOP package supports conformal coating for ESD protection. |
Use Scenario: Storing font glyphs and annunciator bitmaps in certified cockpit display units requiring DO-254 compliance. IC Role / Device Role / Timing Role: Deterministic-access memory mapped into PowerPC 750GX local bus for real-time symbol rendering. Use Value: Guaranteed 12 ns tAA across –40°C to +85°C eliminates timing margin uncertainty in thermal cycling validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 512K × 16, 45 ns access, 2.2–3.6 V supply, SOIC-44 package | Slower speed and higher voltage tolerance; suited for cost-sensitive non-real-time buffering | Select when longer access time is acceptable and wider supply range is needed for mixed-voltage systems. |
| AS6C4008-12TIN | 256K × 16, 12 ns access, 2.7–3.6 V, TSOP-44, lower ICC (120 mA vs. 170 mA) | Same speed and organization but lower dynamic power; not qualified for industrial temp range | Prefer for commercial-temp consumer electronics where power efficiency outweighs extended temperature coverage. |
Compared with 71V416L12PHGI8, CY62167EV30LL-45ZSXI trades speed for broader voltage flexibility and lower cost, while AS6C4008-12TIN matches access time but sacrifices industrial qualification-making 71V416L12PHGI8 the sole choice for deterministic timing in thermally demanding embedded control.
Availability
71V416L12PHGI8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging panels, and avionics displays requiring stable component supply across extended lifecycle programs.
Supply support for 71V416L12PHGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416 family delivers high-speed, low-power parallel SRAMs optimized for deterministic real-time data buffering in industrial control and communications equipment.
FAQ
What is the maximum guaranteed access time for the 71V416L12PHGI8?
The 71V416L12PHGI8 has a maximum guaranteed address access time (tAA) of 12 ns across the full industrial temperature range (–40°C to +85°C) and supply voltage range (3.0–3.6 V). This value is production-tested and specified in the AC Electrical Characteristics table of the Renesas datasheet revision May 26, 2021.
Does the 71V416L12PHGI8 support partial-word writes?
Yes, the 71V416L12PHGI8 supports partial-word writes via dedicated high-byte (BHE) and low-byte (BLE) enable inputs. When only BHE is asserted, data is written to I/O8–I/O15; when only BLE is asserted, data is written to I/O0–I/O7 - allowing 8-bit updates without affecting the complementary byte.
What package type is used by the 71V416L12PHGI8?
The 71V416L12PHGI8 uses a 44-pin, 400-mil TSOP Type II package (package code PHG44). This surface-mount package conforms to JEDEC MO-141 standards and features center-placed VDD (Pin 13) and VSS (Pin 14) for reduced noise coupling.
Is the 71V416L12PHGI8 compatible with 3.3 V LVTTL logic interfaces?
Yes, all inputs and outputs of the 71V416L12PHGI8 are LVTTL-compatible. Input thresholds meet VIH ≥ 2.0 V and VIL ≤ 0.8 V; output drive levels satisfy VOH ≥ 2.4 V (IOH = –4 mA) and VOL ≤ 0.4 V (IOL = 8 mA) at VDD = 3.0 V - ensuring direct interconnection with 3.3 V FPGAs and microcontrollers.
What is the standby current specification for the 71V416L12PHGI8?
The 71V416L12PHGI8 specifies two standby current values: ISB = 45 mA maximum under dynamic standby conditions (CS high, f = fMAX), and ISB1 = 10 µA maximum under full static standby (CS high, no address transitions). Both are guaranteed across the industrial temperature range.
71V416L12PHGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
71V416L12PHGI8 FAQ
1.How can I place an order for 71V416L12PHGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L12PHGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L12PHGI8 reliable?
The price and inventory of 71V416L12PHGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L12PHGI8 is usually 5 days.
3.What payment methods are accepted for 71V416L12PHGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L12PHGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L12PHGI8?
71V416L12PHGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L12PHGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L12PHGI8?
For technical support, including 71V416L12PHGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L12PHGI8 requirements.
6.How does Aetrix verify that 71V416L12PHGI8 is sourced from the original manufacturer or authorized distributors?
All 71V416L12PHGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L12PHGI8 meets industry standards.
7.What is the process for return or replacement of 71V416L12PHGI8?
All 71V416L12PHGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L12PHGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L12PHGI8 part is unused and in its original packaging.
Return procedure for 71V416L12PHGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L12PHGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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