Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V416L15BE

Part No.:
71V416L15BE
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
Aetrix71V416L15BE.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,872

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V416L15BE from Renesas is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It serves as a non-refreshing, fully static asynchronous memory buffer in embedded controllers, network interface cards, and industrial PLCs requiring deterministic timing.

For engineers reviewing the 71V416L15BE datasheet, 71V416L15BE pinout, 71V416L15BE application, or 71V416L15BE equivalent, key selection criteria include its 15 ns read cycle time, byte-enable-controlled 16-bit data access, industrial-grade temperature support (–40°C to +85°C), and 48-ball CABGA (BE48) package compatibility with space-constrained PCB layouts.

Technical Context

The 71V416L15BE implements fully static asynchronous logic with no clocks or refresh required. Its architecture includes independent high- and low-byte enable (BHE/BLE), output enable (OE), chip select (CS), and write enable (WE) controls-enabling word, high-byte, or low-byte read/write operations without external gating.

It uses LVTTL-compatible bidirectional I/O buffers with guaranteed VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA under min VDD (3.0 V). The device supports three distinct package variants-SOJ, TSOP II, and CABGA-but the 71V416L15BE specifically maps to the 48-ball, 9 mm × 9 mm BE48/BEG48 CABGA footprint with NC pins at positions A1, D1, G1, and H1 per Renesas' pin table.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4,194,304 bits (256K × 16), enabling 32 KB of fast, deterministic storage without refresh overhead.
Access Time (tAA) 15 ns max - defines minimum address-to-valid-data delay for synchronous bus interfacing.
Read Cycle Time (tRC) 15 ns max - sets shortest interval between successive read operations on same address range.
Supply Voltage 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails; no level-shifting needed for LVTTL hosts.
Operating Temperature –40°C to +85°C - qualified for industrial environments including motor drives and factory automation.
Standby Current (ISB1) 10 µA max - ultra-low static power draw during CS-high sleep mode, critical for battery-backed systems.
I/O Capacitance 7 pF max (CIN), 7 pF max (CI/O) - ensures signal integrity and timing margin in high-speed parallel bus designs.

Pinout & Package

71V416L15BE is packaged in a 48-ball grid array (CABGA), 9 mm × 9 mm, BE48/BEG48 footprint. Pin mapping follows JEDEC-compliant ball assignment with VDD/VSS distributed across center rows to minimize simultaneous switching noise.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; no address multiplexing required.
CS Chip Select Active-low global enable; places device in standby (high-Z I/O) when deasserted.
OE Output Enable Active-low control for output drivers; enables read data only when CS and OE are both low.
WE Write Enable Active-low write strobe; latches data on I/O0–I/O15 when CS, WE, and BHE/BLE are asserted.
BHE / BLE Byte Enable Independent active-low controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes.
I/O0–I/O15 Bidirectional Data LVTTL-compatible 16-bit data bus; direction controlled by WE state and byte enables.
VDD Power Supply 3.3 V core supply; multiple balls (B2, D2, E2, F2, G2, H2) reduce IR drop and improve decoupling.
VSS Ground System ground reference; distributed across center columns (A3, A4, A5, A6, B3, B4, etc.) for low-inductance return path.

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise by interleaving VDD/VSS near signal balls-critical for stable 15 ns timing margins.
Independent Byte Enables (BHE/BLE) Enables partial-word writes without read-modify-write cycles, reducing bus contention and CPU overhead in 8-bit peripheral interfaces.
Low Standby Current (ISB1 = 10 µA) Extends battery life in always-on industrial sensors and retains data integrity during brownout conditions.
Single 3.3 V Supply Operation Eliminates need for dual-voltage regulators or level shifters-simplifies power delivery in compact embedded systems.
15 ns Access + 15 ns Cycle Time Matches timing budgets of legacy PCI, ISA, and microcontroller parallel buses without wait-state insertion.

Applications

Industrial PLC Memory Buffer Network Interface Card (NIC) Packet Buffer

Use Scenario: Storing real-time I/O status and control registers in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state read/write access to CPU and FPGA logic for cycle-accurate I/O mirroring.

Use Value: 15 ns tAA ensures sub-microsecond register updates, meeting <1 µs PLC scan requirements while operating reliably at –40°C to +85°C.

Use Scenario: Temporary storage of Ethernet frames before DMA transfer to host memory in 10/100 Mbps NICs.

IC Role / Device Role / Timing Role: Dual-port-capable buffer interfaced to MAC controller via 16-bit LVTTL bus with byte-select granularity.

Use Value: BHE/BLE support allows efficient handling of misaligned frame headers and payloads without CPU intervention or extra logic.

Medical Imaging Front-End FIFO Automotive ADAS Sensor Preprocessing Cache

Use Scenario: Holding digitized X-ray or ultrasound pixel streams prior to compression in portable diagnostic equipment.

IC Role / Device Role / Timing Role: High-reliability static RAM acting as first-stage line buffer between ADC and DSP, immune to refresh-induced jitter.

Use Value: Fully static operation eliminates timing uncertainty from DRAM refresh, preserving pixel clock accuracy and SNR integrity.

Use Scenario: Caching raw radar or camera sensor data in automotive driver-assistance modules before SoC ingestion.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfaced to ASIC sensor hub, providing deterministic latency for time-critical object detection.

Use Value: 10 µA ISB1 minimizes quiescent power in always-on ADAS subsystems, extending vehicle battery runtime during parking mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-15ZSXI 256K × 16, 15 ns, 3.3 V, but uses 44-pin TSOP-II (not CABGA); higher ISB1 (25 µA). Requires PCB redesign for SOJ/TSOP footprint; less suitable for dense BGA-based automotive modules. Preferred where legacy board reuse or cost-sensitive TSOP assembly is prioritized over space savings.
AS6C4008-15TIN 256K × 16, 15 ns, 3.3 V, 44-pin TSOP-II; lacks BHE/BLE-byte writes require external logic. Not pin-compatible; requires additional glue logic for byte-select functionality in existing 71V416L15BE designs. Consider only if BHE/BLE is unused and TSOP-II packaging aligns with manufacturing infrastructure.

Compared with CY62167EV30LL-15ZSXI and AS6C4008-15TIN, the 71V416L15BE uniquely combines CABGA packaging, true independent byte enables, and 10 µA standby current-making it optimal for new industrial and automotive designs where layout density, power efficiency, and partial-word write capability are jointly critical.

Availability

71V416L15BE is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging front-ends, automotive ADAS sensor hubs, and network interface cards requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V416L15BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V416L15BE belongs to Renesas' legacy high-speed parallel SRAM product line, engineered for deterministic, low-latency memory interfacing in systems where refresh-free operation and industrial temperature resilience are mandatory.

FAQ

What is the maximum operating temperature range for the 71V416L15BE?

The 71V416L15BE is rated for industrial operation from –40°C to +85°C. This specification is validated per Renesas' DC and AC electrical characteristics tables and applies to all package variants-including the BE48 CABGA used in the 71V416L15BE orderable part. No derating is required within this range.

Does the 71V416L15BE support true independent byte writes without external logic?

Yes. The 71V416L15BE provides dedicated BHE (high-byte enable) and BLE (low-byte enable) inputs that directly control I/O8–I/O15 and I/O0–I/O7, respectively. When one byte enable is low and the other high, only the selected 8-bit subset is written-no external gates or latches are needed.

What is the standby current consumption of the 71V416L15BE in full static mode?

In full standby mode (CS = VIH, f = 0), the 71V416L15BE draws ≤10 µA typical and ≤10 µA maximum ISB1 current. This value is guaranteed across voltage (3.0–3.6 V) and temperature (–40°C to +85°C) per Renesas' DC Electrical Characteristics table.

Is the 71V416L15BE pin-compatible with earlier IDT-branded versions?

Yes. The 71V416L15BE maintains identical pinout, timing, and electrical specifications as the original IDT71V416L15BE. Renesas acquired IDT's memory portfolio and retained full functional and mechanical compatibility-including BE48 ball map, JEDEC pin assignments, and AC/DC parameter limits.

What package type does the 71V416L15BE use, and are there lead-free options?

The 71V416L15BE uses a 48-ball CABGA (BE48/BEG48), 9 mm × 9 mm, RoHS-compliant and lead-free. "G" suffix variants (e.g., 71V416L15BEG) denote green (halogen-free) construction, confirmed in Renesas' Ordering Information table.

71V416L15BE Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

71V416L15BE FAQ

1.How can I place an order for 71V416L15BE through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416L15BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416L15BE reliable?

The price and inventory of 71V416L15BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L15BE is usually 5 days.

3.What payment methods are accepted for 71V416L15BE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L15BE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416L15BE?

71V416L15BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416L15BE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416L15BE?

For technical support, including 71V416L15BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L15BE requirements.

6.How does Aetrix verify that 71V416L15BE is sourced from the original manufacturer or authorized distributors?

All 71V416L15BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L15BE meets industry standards.

7.What is the process for return or replacement of 71V416L15BE?

All 71V416L15BE units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L15BE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416L15BE part is unused and in its original packaging.

Return procedure for 71V416L15BE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V416L15BE Tags

  • 71V416L15BE
  • 71V416L15BE PDF
  • 71V416L15BE Datasheet
  • 71V416L15BE Specifications
  • 71V416L15BE Images
  • Renesas
  • Renesas 71V416L15BE
  • Buy 71V416L15BE
  • 71V416L15BE Price
  • 71V416L15BE Distributor
  • 71V416L15BE Supplier
  • 71V416L15BE Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER