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Renesas 71V416L15BEG
- Part No.:
- 71V416L15BEG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416L15BEG.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:250
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Product details
Overview
71V416L15BEG from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, and LVTTL-compatible I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory control in embedded systems requiring deterministic timing and low standby current. Used in industrial networking controllers and real-time data buffering.
For engineers reviewing the 71V416L15BEG datasheet, 71V416L15BEG pinout, 71V416L15BEG application, or 71V416L15BEG equivalent, key selection criteria include its 15 ns read cycle time, 40 µA full-standby current (ISB1), JEDEC-compliant 48-ball BGA (BEG48) package, and industrial temperature range (–40°C to +85°C).
Technical Context
The 71V416L15BEG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic memory access. Its dual-byte enable architecture allows independent 8-bit writes to high (I/O8–I/O15) or low (I/O0–I/O7) data lanes without affecting adjacent bytes.
Timing is controlled by three independent enable paths: CS-driven, OE-driven, and BHE/BLE-driven write cycles, each with distinct setup/hold and pulse-width requirements (e.g., tWP = 10 ns min). All inputs and outputs are LVTTL-compatible with VIH = 2.0 V min and VIL = 0.8 V max at VDD = 3.3 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 15 ns maximum - guarantees worst-case address-to-data delay in industrial temperature range |
| Read Cycle Time (tRC) | 15 ns maximum - defines minimum interval between successive read operations |
| Full Standby Current (ISB1) | 10 µA maximum at VDD = 3.6 V, f = 0 - enables ultra-low-power sleep mode in battery-backed systems |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±10% regulation variation |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded applications without derating |
| I/O Interface | LVTTL-compatible - ensures direct interfacing with 3.3 V microcontrollers and FPGAs without level shifters |
Pinout & Package
71V416L15BEG is packaged in a 48-ball fine-pitch BGA (BEG48), 9 mm × 9 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant. Pin 28 is NC or optionally connected to VSS per design flexibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching |
| CS | Chip Select | Active-low global enable; device enters standby (ISB1 = 10 µA) when high |
| OE | Output Enable | Active-low control for output drivers; tOE = 7 ns max ensures fast read response |
| WE | Write Enable | Active-low write strobe; tWP = 10 ns min defines minimum write pulse duration |
| BHE / BLE | Byte Enable | Independent high/low byte gating; enables 8-bit partial writes without read-modify-write overhead |
| I/O0–I/O7 / I/O8–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; high-impedance state when CS, OE, or byte enables inactive |
| VDD | Power Supply | 3.3 V core and I/O supply; decoupling required per Renesas layout guidelines |
| VSS | Ground | Primary ground reference; multiple VSS balls support low-noise return path |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/GND Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS pins around perimeter |
| Low-Power Standby Mode | ISB1 = 10 µA max eliminates need for external power gating in always-on industrial nodes |
| Dual Byte Write Control | BHE/BLE pins allow atomic 8-bit writes-critical for register-mapped peripherals and protocol stacks |
| 15 ns Industrial-Grade Timing | tAA/tRC = 15 ns guaranteed across –40°C to +85°C, enabling deterministic real-time memory access |
| 48-Ball BGA (BEG48) | 9 mm × 9 mm footprint supports high-density PCB layouts while maintaining thermal performance via exposed pad option |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Memory |
|---|---|
Use Scenario: Storing real-time sensor acquisition buffers in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit parallel access synchronized to PLC scan clock edges. Use Value: 15 ns tAA ensures data availability within tight I/O scan windows; ISB1 = 10 µA extends backup battery life during power-loss events. |
Use Scenario: Holding uncompressed grayscale image frames (e.g., 1024×768 @ 8-bit) in portable ultrasound devices. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced directly to image sensor controller and display pipeline. Use Value: 16-bit bus width matches common pixel packing formats; LVTTL compatibility avoids level-shifter components in compact handheld form factors. |
| Avionics Data Logging | Test Equipment Pattern Memory |
Use Scenario: Capturing flight-critical telemetry streams at 10+ MHz sampling rates with guaranteed non-volatile retention on power loss. IC Role / Device Role / Timing Role: Primary volatile memory stage before EEPROM/FPGA-based flash translation layer. Use Value: Industrial temperature rating (–40°C to +85°C) meets DO-160E environmental test requirements; BEG48 package supports conformal coating and mechanical shock resistance. |
Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern store accessed by FPGA-based sequencer with precise nanosecond-aligned read/write timing. Use Value: tCLZ = 4 ns and tCHZ = 7 ns minimize bus turnaround latency; separate BHE/BLE enables efficient nibble-aligned test vector loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4-Mbit (256K × 16), 45 ns access, 5 V tolerant I/O, SOIC-44 package | Slower timing, higher voltage, through-hole packaging - suitable only where legacy 5 V systems or board space permits larger footprint | Select only if backward compatibility with 5 V logic or SOIC assembly infrastructure is mandatory. |
| AS6C4008-55TIN | 4-Mbit (256K × 16), 55 ns access, 3.3 V supply, TSOP-44 package | Significantly slower (55 ns vs. 15 ns), higher ISB1 (25 µA), no byte enables - lacks timing determinism for real-time control | Consider only for cost-sensitive, non-real-time applications where 15 ns timing is not required. |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-55TIN, the 71V416L15BEG delivers 3× faster access, 2.5× lower standby current, and industrial-grade BGA packaging-making it optimal for space-constrained, timing-critical embedded systems requiring guaranteed nanosecond-level memory response.
Availability
71V416L15BEG is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics data loggers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V416L15BEG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The 71V416L15BEG belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where asynchronous access and industrial reliability are critical.
FAQ
What is the maximum operating temperature range for the 71V416L15BEG?
The 71V416L15BEG is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including 15 ns access time and 10 µA full-standby current. No derating is required within this range, making it suitable for harsh-environment applications such as factory automation and outdoor communications equipment.
Does the 71V416L15BEG require an external clock or refresh circuitry?
No, the 71V416L15BEG uses fully static asynchronous design and requires no clock signal or periodic refresh cycles. Its operation depends solely on address, control (CS/OE/WE/BHE/BLE), and data signals. This eliminates timing complexity in microcontroller- or FPGA-based systems and ensures data retention as long as VDD remains within 3.0–3.6 V and temperature stays within spec.
Can the 71V416L15BEG be used with 5 V logic interfaces?
No-the 71V416L15BEG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH is specified at 2.0 V minimum. Direct connection to 5 V logic may cause damage or undefined behavior. Level translation (e.g., TXB0104 or discrete MOSFET buffers) is required for interoperability with 5 V systems.
What is the function of Pin 28 on the 71V416L15BEG BEG48 package?
Pin 28 on the 71V416L15BEG BEG48 package is designated NC (No Connect), but the datasheet notes it may optionally be connected to VSS for enhanced grounding or noise reduction. This flexibility supports layout optimization in high-noise environments without altering functionality-no internal circuitry connects to this pin under normal operation.
How does the 71V416L15BEG handle partial writes to high or low bytes?
The 71V416L15BEG supports true independent byte writes via dedicated BHE (high byte, I/O8–I/O15) and BLE (low byte, I/O0–I/O7) inputs. When one byte enable is active and the other inactive, only the selected 8-bit lane updates; the unselected byte retains its prior value. This eliminates read-modify-write overhead and ensures atomic 8-bit updates essential for register-mapped hardware interfaces.
71V416L15BEG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416L15BEG FAQ
1.How can I place an order for 71V416L15BEG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416L15BEG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416L15BEG reliable?
The price and inventory of 71V416L15BEG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L15BEG is usually 5 days.
3.What payment methods are accepted for 71V416L15BEG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L15BEG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416L15BEG?
71V416L15BEG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416L15BEG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416L15BEG?
For technical support, including 71V416L15BEG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L15BEG requirements.
6.How does Aetrix verify that 71V416L15BEG is sourced from the original manufacturer or authorized distributors?
All 71V416L15BEG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L15BEG meets industry standards.
7.What is the process for return or replacement of 71V416L15BEG?
All 71V416L15BEG units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L15BEG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416L15BEG part is unused and in its original packaging.
Return procedure for 71V416L15BEG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416L15BEG Tags
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