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Renesas 71V416L15BEG8

Part No.:
71V416L15BEG8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
Aetrix71V416L15BEG8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,556

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Product details

Overview

71V416L15BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It serves as a non-refreshing, fully static asynchronous memory buffer in embedded controllers, industrial PLCs, and legacy bus-based systems requiring deterministic timing.

For engineers reviewing the 71V416L15BEG8 datasheet, 71V416L15BEG8 pinout, 71V416L15BEG8 application, or 71V416L15BEG8 equivalent, key selection criteria include its 15 ns read cycle time, byte-enable-controlled 16-bit word access, industrial temperature range (–40°C to +85°C), and 48-ball BGA (BEG48) package with 9 mm × 9 mm footprint.

Technical Context

The 71V416L15BEG8 implements a fully static asynchronous architecture with no clocks or refresh required. Its dual-byte enable (BHE/BLE) and separate output enable (OE) support independent high- and low-byte reads/writes, while chip select (CS) and write enable (WE) provide standard SRAM control logic compatible with legacy microprocessor buses.

It uses high-reliability CMOS fabrication optimized for low dynamic and static power: ISB1 (full standby current) is 10 µA max at VDD = 3.6 V, and ICC (dynamic operating current) is 160 mA max at fMAX under industrial conditions. All inputs and I/Os are LVTTL-compatible with VIH = 2.0 V min and VIL = 0.8 V max.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16 organization)
Access Time (tAA)15 ns - guarantees data valid within 15 ns of address stabilization under industrial conditions
Supply Voltage3.0 V to 3.6 V - operates reliably across full 3.3 V rail tolerance without regulation overhead
Operating Temperature–40°C to +85°C - qualified for industrial-grade embedded systems with thermal cycling
Standby Current (ISB1)10 µA max - enables ultra-low-power sleep modes in battery-backed or energy-constrained applications
I/O InterfaceLVTTL-compatible - ensures direct interfacing with 3.3 V microcontrollers and FPGAs without level-shifting
Package48-ball BGA (BEG48), 9 mm × 9 mm - compact footprint suitable for space-constrained PCB layouts

Pinout & Package

71V416L15BEG8 is housed in a 48-ball grid array (BEG48) package with 9 mm × 9 mm body size and 0.8 mm ball pitch. Pin assignments follow the BEG48 mechanical layout defined in Renesas documentation.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no address multiplexing required
CSChip SelectActive-low enable controlling device activation; supports multi-chip memory decoding
WEWrite EnableActive-low signal initiating write cycles; used with CS and BHE/BLE to define write boundaries
OEOutput EnableActive-low control enabling bidirectional I/O drivers; allows read-only access without toggling WE
BHE / BLEByte Enable (High/Low)Independent 8-bit byte controls permitting partial-word writes without disturbing adjacent bytes
I/O0–I/O7 / I/O8–I/O15Bidirectional Data I/O16-bit LVTTL-compliant data bus; direction controlled by WE and OE states
VDDPower SupplySingle 3.3 V supply input; two dedicated VDD balls reduce IR drop and improve noise immunity
VSSGroundTwo dedicated ground balls placed per JEDEC center-pinout standard to minimize switching noise

Key Features

Feature Design Value
Fully static asynchronous operationNo clocks, no refresh cycles required - simplifies system timing design and eliminates hidden refresh overhead
JEDEC center power/ground pinoutReduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS pins around the die perimeter
Separate high- and low-byte enablesEnables true 8-bit sub-word writes in 16-bit systems, avoiding read-modify-write sequences and bus contention
Low-power standby mode (ISB1 = 10 µA)Supports long-duration power-down states in portable or energy-harvested systems without data loss
15 ns access time with industrial qualificationMeets real-time response requirements in motion control, test equipment, and deterministic industrial networks

Applications

Industrial PLC Memory Buffer Legacy Bus-Based Instrumentation

Use Scenario: Storing configuration registers and real-time I/O status in programmable logic controllers with ISA or VMEbus interfaces.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state memory access for CPU instruction/data fetch and I/O register shadowing.

Use Value: 15 ns tAA and byte-enable support enable deterministic scan-cycle execution under 100 µs PLC scan times without bus arbitration delays.

Use Scenario: Serving as program/data RAM in benchtop oscilloscopes and spectrum analyzers using aging 32-bit microprocessor buses.

IC Role / Device Role / Timing Role: Drop-in replacement for obsolete 256K×16 SRAMs on legacy PCBs with TSOP or BGA footprints.

Use Value: Pin-compatible with BEG48 layout and identical LVTTL signaling eliminates redesign; industrial temp rating ensures field reliability.

Embedded Network Controller Cache Medical Imaging Frame Buffer

Use Scenario: Caching packet headers and protocol state in Ethernet/IP or PROFINET edge gateways with ARM9-class processors.

IC Role / Device Role / Timing Role: Low-latency, low-power memory for burst-mode packet buffering and descriptor management.

Use Value: 10 µA ISB1 enables deep-sleep between packet bursts; 16-bit bus width matches common DMA engine word sizes.

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames in portable diagnostic devices before compression/transmission.

IC Role / Device Role / Timing Role: High-reliability, non-refreshing frame buffer ensuring pixel data integrity during acquisition pauses.

Use Value: Fully static operation prevents data corruption during power glitches; industrial temp range accommodates clinical environment thermal profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-15ZSXI16 Mbit (1M × 16), 15 ns, same 3.3 V supply and BEG48 package but larger density and higher ICC (200 mA)Requires PCB layout change for address bus width (A0–A19 vs A0–A17); suited for systems needing >4 Mbit capacitySelect when future scalability or larger working memory is required; verify address decoder compatibility.
AS6C4008-15TIN4 Mbit (256K × 16), 15 ns, 3.3 V, TSOP-II (44-pin) package - no BGA option; ISB1 = 25 µA (higher than 71V416L15BEG8's 10 µA)Compatible pinout for SOJ/TSOP footprints only; not interchangeable with BEG48 BGA layoutChoose for cost-sensitive, non-space-constrained designs where TSOP assembly is preferred over BGA reflow.

Compared with CY62167EV30LL-15ZSXI and AS6C4008-15TIN, the 71V416L15BEG8 uniquely balances industrial temperature operation, ultra-low 10 µA standby current, and BEG48 BGA packaging - making it optimal for thermally demanding, power-aware embedded systems where footprint and reliability are prioritized over raw density or package flexibility.

Availability

71V416L15BEG8 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and legacy bus-based embedded systems requiring stable component supply and long-term lifecycle support.

Supply support for 71V416L15BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416L15BEG8 belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-power, asynchronous memory needs in industrial and communications equipment where reliability and timing predictability are critical.

FAQ

What is the maximum operating frequency supported by the 71V416L15BEG8?

The 71V416L15BEG8 does not operate on a clock; it is an asynchronous SRAM. Its maximum effective throughput is governed by its 15 ns read cycle time (tRC), enabling up to ~66.7 MHz sustained random-access operation in ideal conditions. Actual system bandwidth depends on bus protocol overhead, address setup/hold timing, and controller latency - not a fixed clock frequency.

Does the 71V416L15BEG8 require external refresh circuitry?

No, the 71V416L15BEG8 is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and within specification - a key advantage over DRAM in deterministic real-time systems.

Can the 71V416L15BEG8 be used with 5 V logic interfaces?

No, the 71V416L15BEG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V - incompatible with standard 5 V TTL logic levels. Interfacing with 5 V systems requires level translation on all address, control, and data lines.

What is the meaning of "L" in the part number 71V416L15BEG8?

The "L" in 71V416L15BEG8 denotes the low-power variant of the IDT71V416 family. Compared to the "S" (standard power) version, the "L" grade reduces dynamic operating current (ICC) and full standby current (ISB1) - e.g., ISB1 is 10 µA max for 71V416L15BEG8 versus 20 µA max for the "S" variant - without sacrificing speed or functionality.

Is the 71V416L15BEG8 RoHS compliant and halogen-free?

Yes, the 71V416L15BEG8 is a green-part device meeting RoHS Directive 2011/65/EU and is halogen-free per Renesas' material declarations. The "G" in the package code (BEG8) explicitly indicates compliance with lead-free and hazardous-substance restrictions for industrial and medical applications.

71V416L15BEG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

71V416L15BEG8 FAQ

1.How can I place an order for 71V416L15BEG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416L15BEG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416L15BEG8 reliable?

The price and inventory of 71V416L15BEG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416L15BEG8 is usually 5 days.

3.What payment methods are accepted for 71V416L15BEG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416L15BEG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416L15BEG8?

71V416L15BEG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416L15BEG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416L15BEG8?

For technical support, including 71V416L15BEG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416L15BEG8 requirements.

6.How does Aetrix verify that 71V416L15BEG8 is sourced from the original manufacturer or authorized distributors?

All 71V416L15BEG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416L15BEG8 meets industry standards.

7.What is the process for return or replacement of 71V416L15BEG8?

All 71V416L15BEG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416L15BEG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416L15BEG8 part is unused and in its original packaging.

Return procedure for 71V416L15BEG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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