Renesas 71V416L15BEI

Overview

71V416L15BEI from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM operating from a single 3.3 V supply, with 15 ns read cycle time, industrial temperature range (–40°C to +85°C), and JEDEC-compliant center power/ground pinout - used in real-time data buffering for industrial controllers and network interface cards.

For engineers reviewing the 71V416L15BEI datasheet, 71V416L15BEI pinout, 71V416L15BEI application, or 71V416L15BEI equivalent, key selection criteria include byte-enable timing (tBE = 7 ns), standby current (ISB1 = 10 µA), LVTTL-compatible I/O, BGA-48 package footprint, and industrial-grade reliability without refresh circuitry.

Technical Context

The 71V416L15BEI implements fully static asynchronous architecture with no clocks or refresh required. Its dual-byte enable (BHE/BLE), independent output enable (OE), and chip select (CS) support flexible memory access modes including word, high-byte, and low-byte operations.

It uses high-reliability CMOS process with LVTTL-compatible bidirectional I/Os (VIH = 2.0 V min, VOL = 0.4 V max), operates across full 3.0–3.6 V VDD range, and features JEDEC-standard SOJ/TSOP/BGA pinouts optimized for noise reduction via center VDD/VSS placement.

Key Specifications

Pinout & Package

71V416L15BEI is packaged in a 48-ball fine-pitch BGA (BE48, 9 mm × 9 mm, 0.8 mm pitch) with ball grid arranged in 6×8 array. Pin functions follow JEDEC-standard memory layout with VDD/VSS centered for EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with 71V416L15BEI, CY62167EV30LL-15ZSXI trades BGA density and ultra-low standby for SOIC manufacturability, while AS6C4008-15TIN sacrifices package compactness for broader thermal tolerance - making 71V416L15BEI optimal for space-constrained industrial edge nodes requiring minimal quiescent power.

Availability

71V416L15BEI is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging subsystems, and avionics sensor interfaces requiring stable component supply across extended product lifecycles.

Supply support for 71V416L15BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V416L15BEI belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic-latency, low-power, asynchronous memory applications in harsh-environment embedded systems.

FAQ

What is the maximum operating frequency supported by the 71V416L15BEI?

The 71V416L15BEI does not require a clock and operates asynchronously, but its 15 ns read cycle time (tRC) supports effective interface speeds up to 66 MHz when used with controllers that meet timing margins. The device guarantees tAA = 15 ns and tACS = 15 ns across the full industrial temperature range, enabling reliable operation without wait states in FPGA or ASIC memory subsystems.

Does the 71V416L15BEI require refresh circuitry or external clocks?

No, the 71V416L15BEI is a fully static RAM and requires no refresh cycles or clocks. Its internal circuitry maintains data indefinitely as long as VDD is applied and CS remains high during standby. This eliminates refresh overhead in microcontroller-based systems and simplifies design for battery-powered industrial loggers where deterministic power budgeting is essential.

What is the function of the BHE and BLE pins on the 71V416L15BEI?

On the 71V416L15BEI, BHE (Byte High Enable) and BLE (Byte Low Enable) are active-low inputs that independently control access to the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When only one is asserted, the device performs an 8-bit write or read - allowing partial-word updates without affecting the complementary byte, which is critical for efficient register-mapped peripheral interfacing.

Is the 71V416L15BEI pin-compatible with earlier IDT versions like the 71V416S15BEI?

Yes, the 71V416L15BEI shares identical pinout, timing specifications, and electrical characteristics with the 71V416S15BEI in the BE48 BGA package. The "L" suffix denotes low-power variant (lower ISB/ICC), but both are mechanically and electrically interchangeable in existing layouts - no PCB changes are required for drop-in replacement in industrial designs already qualified with the "S" grade.

What are the thermal and mechanical specifications of the 71V416L15BEI BGA package?

The 71V416L15BEI uses a 48-ball CABGA (BE48) package measuring 9 mm × 9 mm with 0.8 mm ball pitch and NiPdAu surface finish. It is rated for reflow per J-STD-020 Rev. E, has a moisture sensitivity level (MSL) of 3, and operates reliably from –40°C to +85°C ambient. Thermal resistance (θJA) is 42°C/W, enabling convection-cooled operation in sealed industrial enclosures without heatsinking.