Renesas 71V416L15PHG8

Overview

71V416L15PHG8 from Renesas Electronics is a 4-Mbit (256K × 16) low-power, high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It serves as a non-refreshing, fully static asynchronous memory buffer in embedded controllers, networking interface cards, and industrial real-time data acquisition systems.

For engineers reviewing the 71V416L15PHG8 datasheet, 71V416L15PHG8 pinout, 71V416L15PHG8 application, or 71V416L15PHG8 equivalent, key selection criteria include its 15 ns read cycle time, low standby current (40 mA industrial grade), byte-enable architecture, TSOP Type II package compatibility, and support for word/byte-level write control without external logic.

Technical Context

The 71V416L15PHG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual byte enable (BHE/BLE) to independently gate high- and low-byte data paths during writes. Its address access time (tAA = 15 ns) and chip select access time (tACS = 15 ns) are matched to ensure deterministic timing across all enable configurations.

It features three distinct enable hierarchies: chip select (CS) for device activation, output enable (OE) for tri-state control of I/Os with 7 ns high-to-high-Z transition, and separate BHE/BLE for byte-selective writes-all operating under LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) on a 3.3 V ±0.3 V supply.

Key Specifications

Pinout & Package

71V416L15PHG8 is packaged in a 44-pin, 400-mil TSOP Type II (PHG44) with JEDEC-standard center power/ground pinout to minimize simultaneous switching noise. Pin 1 is A0 (LSB address); pins 23 and 34 are VDD; pins 11 and 32 are VSS; pin 22 is A17 (MSB address); pin 27 is OE; pin 26 is BHE; pin 25 is BLE; pins 1–8 and 37–44 are bidirectional I/O0–I/O15.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62167EV30LL-45ZSXI and AS6C4008-15TIN, the 71V416L15PHG8 delivers deterministic 15 ns performance with native 16-bit byte-enable control and optimized noise-aware packaging-making it the preferred choice for real-time industrial and communications systems requiring guaranteed timing and minimal layout complexity.

Availability

71V416L15PHG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging subsystems, and avionics sensor interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V416L15PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416L15PHG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency, non-refreshing memory in real-time embedded systems where reliability and timing predictability outweigh density-per-dollar metrics.

FAQ

What is the maximum operating frequency supported by the 71V416L15PHG8?

The 71V416L15PHG8 does not operate on a clock; it is an asynchronous SRAM. Its 15 ns read cycle time (tRC) supports effective burst transfer rates up to 66.7 MHz when interfaced with a controller capable of meeting setup/hold timing. The minimum cycle time is defined by tRC = 15 ns, not a clock frequency specification.

Does the 71V416L15PHG8 require refresh circuitry or periodic access to retain data?

No. The 71V416L15PHG8 is a fully static RAM and retains data indefinitely as long as VDD is maintained within 3.0–3.6 V and ambient temperature remains within –40°C to +85°C. No refresh cycles, clocks, or periodic access are needed-unlike DRAM or pseudo-SRAM devices.

Can the 71V416L15PHG8 be used with a 5 V microcontroller interface?

No. The 71V416L15PHG8 is strictly a 3.3 V LVTTL device with absolute maximum input voltage of VDD + 0.5 V (≤ 4.1 V). Direct connection to 5 V logic violates VIH/VIL specifications and risks latch-up or parametric failure. Level-shifting circuitry is mandatory for 5 V host interfaces.

What is the function of the BHE and BLE pins on the 71V416L15PHG8?

BHE (Byte High Enable) and BLE (Byte Low Enable) are active-low signals that independently gate the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during write operations. When only BLE is asserted, only I/O0–I/O7 accept data; when only BHE is asserted, only I/O8–I/O15 accept data-enabling true 8-bit partial writes without external byte masking logic.

Is the 71V416L15PHG8 RoHS compliant and halogen-free?

Yes. Per Renesas' ordering information and "Green parts available" designation in the datasheet, the 71V416L15PHG8 is a restricted hazardous substance device compliant with RoHS Directive 2011/65/EU and halogen-free per IEC 61249-2-21, confirmed by part suffix 'G' in the orderable ID (71V416L15PHG8).