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Renesas 71V416S10BE
- Part No.:
- 71V416S10BE
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416S10BE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,902
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Product details
Overview
71V416S10BE from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is packaged in a 48-ball CABGA (9 mm × 9 mm).
For engineers reviewing the 71V416S10BE datasheet, 71V416S10BE pinout, 71V416S10BE application, or 71V416S10BE equivalent, key selection criteria include 10 ns read cycle timing, low-Z output enable response ≤5 ns, byte enable control for 8-bit sub-access, and compatibility with legacy SRAM-based microprocessor bus interfaces requiring asynchronous, no-refresh memory.
Technical Context
The 71V416S10BE implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing across address, chip select, and output enable paths. Its dual-byte enable (BHE/BLE) architecture enables independent high- and low-byte access without external logic.
It features separate OE-controlled output enable and WE-controlled write enable, with overlapping CS/BHE/BLE/WE timing windows defining read, write, and standby states. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and outputs drive ±4 mA/±8 mA loads while maintaining VOL ≤ 0.4 V and VOH ≥ 2.4 V at VDD = 3.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), enabling 16-bit data bus interfacing without external multiplexing |
| Access Time (tAA) | 10 ns max - guarantees valid data on I/O pins within 10 ns of stable address and CS assertion |
| Read Cycle Time (tRC) | 10 ns max - defines minimum interval between successive read operations |
| Output Enable Delay (tOE) | 5 ns max - ensures data appears on I/O lines within 5 ns after OE goes active low |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of typical board-level ripple |
| Operating Temperature | 0°C to +70°C - qualified for commercial-grade embedded systems and industrial control panels |
| Input Capacitance | 6 pF max - minimizes loading on address/control buses and supports high-frequency bus timing margins |
Pinout & Package
71V416S10BE is housed in a 48-ball fine-pitch CABGA package (BE48 / BEG48), 9 mm × 9 mm, 0.8 mm ball pitch, RoHS-compliant and green-process capable. Pin 28 is NC or optionally connected to VSS per layout requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching |
| CS | Chip Select | Active-low enable controlling device participation in bus cycles; asserts internal decode and power gating |
| OE | Output Enable | Active-low signal enabling bidirectional I/O drivers; decouples read timing from CS and WE |
| WE | Write Enable | Active-low control initiating write cycles; combined with CS and BHE/BLE determines write mode |
| BHE, BLE | Byte Enable Inputs | Independent high- and low-byte controls allowing 8-bit sub-word writes without data bus contention |
| I/O0–I/O15 | Bidirectional Data I/O | LVTTL-compatible 16-bit data bus; tristated when CS high or OE high or during write setup/hold |
| VDD | Power Supply | 3.3 V core supply; two dedicated VDD balls (pins D5, E5) reduce IR drop and switching noise |
| VSS | Ground | Ground reference; three VSS balls (pins D4, E4, H5) provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS around the die perimeter |
| Asynchronous Static Operation | Eliminates need for clocks, refresh controllers, or wait-state generators in microcontroller and FPGA memory interfaces |
| Byte-Enable Write Control | Enables partial-word updates (e.g., 8-bit register writes) without masking logic or external transceivers |
| Low-Z Output Enable Response | tOE ≤ 5 ns allows tight integration with fast microprocessors (e.g., Intel 80486, Motorola 68040 derivatives) |
| Dynamic Standby Current (ISB) | 70 mA max at fMAX - enables low-power hold modes during CPU idle without sacrificing wake-up latency |
Applications
| Industrial PLC Memory Buffer | Legacy x86 System BIOS Storage |
|---|---|
|
Use Scenario: Storing real-time I/O mapping tables and configuration registers in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state access to volatile working memory for ladder logic execution engines. Use Value: 10 ns tAA and tRC ensure full 256K-word table reads complete within one 20 MHz bus cycle, eliminating pipeline stalls. |
Use Scenario: Holding boot firmware variables and runtime configuration data in PC-compatible motherboards using ISA or LPC bus interfaces. IC Role / Device Role / Timing Role: Non-refreshed, byte-selectable memory mapped into the 384 KB–1 MB UMA region for fast BIOS shadowing and CMOS RAM extension. Use Value: BHE/BLE support enables direct 8-bit access to legacy 8086-style I/O space, preserving compatibility with legacy BIOS code. |
| Medical Imaging Frame Buffer | Avionics Display Controller Cache |
|
Use Scenario: Acting as line buffer for real-time digital X-ray image preprocessing pipelines where pixel data must be accessed at >25 MHz rates. IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory interfaced directly to FPGA-based pixel processors via parallel 16-bit bus. Use Value: 10 ns access and 5 ns tOE allow back-to-back pixel reads at 100 MB/s sustained bandwidth, matching CCD sensor output rates. |
Use Scenario: Caching graphics primitives and font glyphs in DO-254-certified cockpit display units requiring radiation-tolerant, predictable timing. IC Role / Device Role / Timing Role: Deterministic, no-refresh memory used for mission-critical display list storage where timing jitter is unacceptable. Use Value: Fully static operation eliminates refresh-induced bus arbitration delays, guaranteeing worst-case 10 ns read latency under all conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 16 Mbit (1M × 16), 10 ns, 3.3 V, TSOP-44 - larger density but same speed and voltage; no BGA option | Preferred where board space permits TSOP and higher capacity is needed for extended boot code or larger buffers | Select when >4 Mbit capacity is required and PCB layout accommodates 44-pin TSOP footprint |
| AS6C4008-10TIN | 4 Mbit (512K × 8), 10 ns, 3.3 V, SOJ-32 - 8-bit bus, different pinout, no byte enables, higher ICC (120 mA dynamic) | Suitable for 8-bit microcontrollers (e.g., 8051 derivatives) where 16-bit bus width is unnecessary | Choose only for cost-sensitive 8-bit systems where byte-enable functionality is unused and SOJ is preferred |
Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the 71V416S10BE uniquely delivers 16-bit bus width, BGA packaging for high-density layouts, and JEDEC-compliant center-power pinout - making it optimal for space-constrained, noise-sensitive 16-bit embedded designs requiring exact 4 Mbit capacity.
Availability
71V416S10BE is available at Aetrix Electronics and suitable for industrial PLCs, legacy x86 system BIOS modules, medical imaging subsystems, and avionics display controllers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for 71V416S10BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions, including memory, microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The 71V416S10BE belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for pin-compatible replacement of aging 3.3 V SRAMs in mission-critical, no-refresh memory applications demanding deterministic timing and JEDEC-standard noise immunity.
FAQ
What is the operating voltage range for the 71V416S10BE?
The 71V416S10BE operates over a supply voltage range of 3.0 V to 3.6 V. This 3.3 V nominal rating ensures compatibility with standard LVTTL logic families and provides margin against board-level voltage droop. The device is not rated for 5 V operation, and applying voltages outside this range may cause permanent damage per absolute maximum ratings.
Does the 71V416S10BE require refresh circuitry or clock signals?
No, the 71V416S10BE is a fully static asynchronous SRAM and requires no clocks, timers, or refresh cycles. Its internal circuitry maintains data indefinitely as long as VDD remains within specification and CS is held inactive during standby. This eliminates complexity in microcontroller and FPGA memory controller designs.
What package type is used for the 71V416S10BE?
The 71V416S10BE uses a 48-ball CABGA package (BE48 or BEG48), measuring 9 mm × 9 mm with 0.8 mm ball pitch. It is RoHS-compliant and available in green-process variants. Pin 28 is designated NC but may optionally connect to VSS depending on PCB layout requirements.
How does byte enable functionality work on the 71V416S10BE?
The 71V416S10BE provides independent BHE (high byte enable) and BLE (low byte enable) inputs. When only BHE is active, I/O8–I/O15 are driven; when only BLE is active, I/O0–I/O7 are driven; both active enables full 16-bit word access. This allows precise 8-bit updates without external byte masking logic.
Is the 71V416S10BE compatible with industrial temperature range applications?
No - the 71V416S10BE is specified only for the commercial temperature range (0°C to +70°C). For industrial operation (–40°C to +85°C), Renesas offers the 71V416S10PHGI (TSOP) and 71V416S10BEI (BGA) variants. Using the 71V416S10BE outside its rated temperature range may result in timing violations or data retention failure.
71V416S10BE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416S10BE FAQ
1.How can I place an order for 71V416S10BE through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416S10BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416S10BE reliable?
The price and inventory of 71V416S10BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S10BE is usually 5 days.
3.What payment methods are accepted for 71V416S10BE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S10BE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416S10BE?
71V416S10BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416S10BE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416S10BE?
For technical support, including 71V416S10BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S10BE requirements.
6.How does Aetrix verify that 71V416S10BE is sourced from the original manufacturer or authorized distributors?
All 71V416S10BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S10BE meets industry standards.
7.What is the process for return or replacement of 71V416S10BE?
All 71V416S10BE units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S10BE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416S10BE part is unused and in its original packaging.
Return procedure for 71V416S10BE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416S10BE Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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