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Renesas 71V416S10BEG

Part No.:
71V416S10BEG
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
Aetrix71V416S10BEG.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,394

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Product details

Overview

71V416S10BEG from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and is used in embedded controllers, networking buffers, and industrial PLCs requiring deterministic, non-refreshed memory.

For engineers reviewing the 71V416S10BEG datasheet, 71V416S10BEG pinout, 71V416S10BEG application, or 71V416S10BEG equivalent, key selection criteria include 10 ns read cycle time, 48-ball CABGA (BEG48) package compatibility, commercial temperature range (0°C to +70°C), and low-impedance bidirectional I/O timing under CS/OE/BHE/BLE control.

Technical Context

The 71V416S10BEG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology for stable operation across voltage (3.0–3.6 V) and temperature (0°C to +70°C). Its dual-byte enable architecture allows independent 8-bit access to upper (I/O8–I/O15) and lower (I/O0–I/O7) data lanes.

Timing is controlled by overlapping active-low signals: CS enables the chip, OE gates output drivers, WE controls write latching, and BHE/BLE select byte lanes. All timing parameters-including tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns-are specified under LVTTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and 3.3 V supply.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), enabling 32 KB of fast, random-access storage without refresh overhead
Access Time (tAA)10 ns maximum-guarantees sub-100 MHz bus interface timing for CPU or FPGA memory controllers
Supply Voltage3.0–3.6 V-compatible with standard 3.3 V logic domains and tolerant of ±10% rail variation
I/O InterfaceLVTTL-compatible-directly interfaces with 3.3 V microcontrollers, FPGAs, and ASICs without level shifters
Operating Temperature0°C to +70°C-qualified for commercial-grade embedded systems including telecom line cards and test equipment
Package48-ball CABGA, 9 mm × 9 mm, 0.8 mm pitch (BEG48)-supports high-density PCB layouts with thermal and signal integrity advantages over SOJ/TSOP
Power ConsumptionICC = 200 mA max (dynamic), ISB1 = 20 mA max (full standby)-enables low-idle-power system states in battery-backed or energy-sensitive applications

Pinout & Package

71V416S10BEG is housed in a 48-ball fine-pitch CABGA (BEG48) package, 9 mm × 9 mm, with 0.8 mm ball pitch and RoHS-compliant green finish. Pinout follows JEDEC-standard center-power/ground arrangement to minimize switching noise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no internal multiplexing required
CSChip SelectActive-low global enable-device enters high-Z standby when deasserted, reducing system noise
OEOutput EnableActive-low output gate-allows data read without toggling CS, enabling fast burst reads
WEWrite EnableActive-low write strobe-latches data on rising edge; works with CS, BHE, and BLE for precise byte control
BHE / BLEByte Enable InputsIndependent active-low controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O bus-direction determined by WE/CS state; no external transceivers needed
VDD / VSSPower / GroundDual VDD/VSS pairs at center positions (pins A3/A4/B1/B2/D5/E5/F1/G1/H3/H4) reduce IR drop and ground bounce

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise (SSN) by symmetrically distributing power/ground balls around the die perimeter
Equal Access & Cycle TimestAA = tRC = 10 ns ensures predictable timing margins for both read setup and full cycle completion
Independent Byte Enables (BHE/BLE)Enables 8-bit microcontroller interfacing or partial writes without disturbing adjacent byte lanes
Low-Power Standby ModeISB1 = 20 mA max (static) allows extended idle periods in portable or thermally constrained systems
Single 3.3 V SupplyEliminates need for dual-voltage rails or regulators-simplifies power delivery and reduces BOM count

Applications

Industrial PLC Memory BufferNetwork Packet Buffer

Use Scenario: Storing real-time I/O status and ladder logic variables in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration and process data; accessed synchronously with CPU clock edges during scan execution.

Use Value: 10 ns tAA ensures memory response fits within tight 500 ns PLC scan windows, eliminating wait states and jitter.

Use Scenario: Temporary storage of Ethernet frames in switch fabric or router line cards before forwarding or classification.

IC Role / Device Role / Timing Role: Dual-port accessible buffer-CPU writes ingress packets while MAC hardware reads egress packets via separate byte lanes.

Use Value: Independent BHE/BLE pins allow concurrent 8-bit header parsing and 8-bit payload buffering without bus contention.

FPGA Configuration CacheDigital Signal Processor Data Store

Use Scenario: Holding intermediate filter coefficients and FFT twiddle tables in reconfigurable DSP accelerators.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory mapped into FPGA's AXI-lite or Wishbone bus; accessed via burst reads/writes.

Use Value: 48-ball CABGA package provides superior thermal dissipation and signal integrity vs. TSOP/SOJ-critical for sustained 100+ MHz burst transfers.

Use Scenario: Real-time audio sample buffering in voice-over-IP gateways where latency must remain below 1 ms.

IC Role / Device Role / Timing Role: Ping-pong RAM for interleaved ADC capture and DAC playback-switched using external logic synchronized to frame clocks.

Use Value: tOH = 4 ns hold time guarantees clean data capture even at 100 MHz sampling rates with minimal setup margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62148EV30LL-10ZSXIT4-Mbit (256K × 16), 10 ns, 3.3 V, 48-TSOP-I/O capacitance 8 pF vs. 71V416S10BEG's 7 pF; no BGA optionPreferred where board space permits TSOP and thermal budget allows higher junction tempSelect for legacy designs using TSOP footprints or where reworkability outweighs density advantage
AS6C4008-10TIN4-Mbit (256K × 16), 10 ns, 3.3 V, 44-SOJ-lower ICC (160 mA) but no byte enables; only single WE controlSuitable for simple microcontroller systems lacking byte-lane control logicChoose when cost sensitivity dominates and BHE/BLE functionality is unused in target design

Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V416S10BEG delivers superior signal integrity via its BEG48 package and deterministic byte-level control-critical for high-speed, mixed-width data paths in modern embedded systems.

Availability

71V416S10BEG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network packet buffers, FPGA configuration caches, and digital signal processor data stores requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for 71V416S10BEG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416S10BEG belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-latency memory access in real-time control and communications systems where refresh-free operation and precise timing are essential.

FAQ

What is the operating temperature range for the 71V416S10BEG?

The 71V416S10BEG is rated for commercial temperature operation from 0°C to +70°C. This range is validated per Renesas' datasheet revision May 26, 2021, and applies specifically to orderable part numbers ending in "BEG" (e.g., 71V416S10BEG). Industrial-grade variants (e.g., 71V416S10BEGI) support –40°C to +85°C but are distinct SKUs.

Does the 71V416S10BEG require an external clock or refresh circuitry?

No, the 71V416S10BEG is a fully static RAM and requires no clock input or periodic refresh cycles. Its asynchronous design relies solely on address, control (CS/OE/WE/BHE/BLE), and data signals-making it ideal for deterministic real-time systems where timing predictability is critical. This behavior is confirmed in the Functional Block Diagram and DC/AC Electrical Characteristics sections of the Renesas datasheet.

What is the meaning of "BEG" in the 71V416S10BEG part number?

In the 71V416S10BEG ordering code, "BEG" denotes the 48-ball CABGA package variant with green (lead-free/RoHS-compliant) finish and commercial temperature grade. Per Renesas' Ordering Information table (page 8, datasheet rev. May 26, 2021), "BEG" maps to BEG48 package type, distinguishing it from PHG44 (TSOP) and PBG44 (SOJ) variants-all sharing identical speed (10 ns) and function but differing in mechanical and thermal characteristics.

Can the 71V416S10BEG be used with 5 V logic systems?

No, the 71V416S10BEG is strictly a 3.3 V device: VDD must be between 3.0 V and 3.6 V, and all inputs (VIH min = 2.0 V, VIL max = 0.8 V) are LVTTL-compatible-not TTL or 5 V CMOS. Direct connection to 5 V buses risks damage or undefined behavior. Level translation is required if interfacing with 5 V controllers, as explicitly stated in the Absolute Maximum Ratings and Recommended DC Operating Conditions tables.

How does the byte enable functionality work on the 71V416S10BEG?

The 71V416S10BEG uses two independent active-low inputs-BHE (Upper Byte Enable) and BLE (Lower Byte Enable)-to control access to I/O8–I/O15 and I/O0–I/O7 respectively. When only BLE is asserted (low), only the lower byte is written or read; when only BHE is asserted, only the upper byte is active. Both must be low for full 16-bit word access. This is verified in the Truth Table (Table 03) and functional block diagram of the Renesas datasheet.

71V416S10BEG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

71V416S10BEG FAQ

1.How can I place an order for 71V416S10BEG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416S10BEG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416S10BEG reliable?

The price and inventory of 71V416S10BEG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S10BEG is usually 5 days.

3.What payment methods are accepted for 71V416S10BEG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S10BEG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416S10BEG?

71V416S10BEG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416S10BEG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416S10BEG?

For technical support, including 71V416S10BEG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S10BEG requirements.

6.How does Aetrix verify that 71V416S10BEG is sourced from the original manufacturer or authorized distributors?

All 71V416S10BEG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S10BEG meets industry standards.

7.What is the process for return or replacement of 71V416S10BEG?

All 71V416S10BEG units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S10BEG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416S10BEG part is unused and in its original packaging.

Return procedure for 71V416S10BEG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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